2SC4095 - Даташиты. Аналоги. Основные параметры

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4095 is an NPN epitaxial silicon transistor designed for use in (Units mm) low-noise and small signal amplifiers from VHF band to UHF band. +0.2 2SC4095 features excellent power gain with very low-noise figures. 2.8

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

Power Transistors 2SC4096 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum R

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4094 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4094 is an NPN epitaxial silicon transistor designed for use in (Units mm) low-noise and small signal amplifiers from VHF band to UHF band. Low- +0.2 noise figure, high gain, and high current capability achieve a ver

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4093 is an NPN silicon epitaxial transistor designed for low (Units mm) noise amplifier at VHF, UHF and CATV band. +0.2 It has large dynamic range and good current characteritics, and is 2.8 -0.3 +0.2 1.5 -0.1 co

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4092 is an NPN silicon epitaxial transistor designed for low- (Units mm) noise amplifier at VHF, UHF band. +0.2 It is contained in 4 pins mini-mold package which enables high-isolation 2.8 -0.3 +0.2 1.5 -0.1

2SC4097FRA 2SC4097 Transistors AEC-Q101 Qualified Medium Power Transistor (32V, 0.5A) 2SC4097 2SC4097FRA Features External dimensions (Units mm) 1) High ICMax. ICMax. = 0.5A 2SC4097FRA 2SC4097 2) Low VCE(sat). Optimal for low voltage operation. 2.0 0.2 1.3 0.1 0.9 0.1 3) Complements the 2SA1577. 2SA1577FRA 0.65 0.65 0.7 0.1 0.2 (1) (2) 0 0.1 (3) Structure A

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM VMT3 (2) Emitter Absolute maximum ratings (Ta=25 C) (3) Collector

2SC4097 Datasheet Medium Power Transistor (32V, 500mA) lOutline l Parameter Value UMT3 VCEO 32V IC 500mA SOT-323 SC-70 lFeatures l 1)High ICMax. lInner circuit l ICMax.=0.5A 2)Low VCE(sat). Optimal for low voltage operation. 3)Complements the 2SA1577. lApplication l DRIVING CIRCUIT,LOW FREQUEN

AEC-Q101 Qualified High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659FHA 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max.

2SC4098 Datasheet Datasheet High frequency amplifier transistor (25V, 50mA, 300MHz) lOutline l SOT-323 Parameter Value SC-70 VCEO 25V IC 50mA UMT3 lFeatures lInner circuit l l 1)Low collector capacitance. (Cob Typ.1.3pF) lApplication l HIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTER RF AMPLIFIER, LOCAL OSCILLATOR lPackaging specifi

MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone (818) 701-4933 2SC4097-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.

MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone (818) 701-4933 2SC4097-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.

MCC 2SC4097-P TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4097-Q CA 91311 Phone (818) 701-4933 2SC4097-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High Icmax. Icmax=0.5A NPN Silicon Low VCE(SAT). Optimal for low voltage operation.

2SC4097 Features Low VCE(sat) Optimal for Low Voltage Operation Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 NPN Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Epitaxial Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified O

2SC4097 0.5A , 32V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High ICMax. ICMax=0.5A. Low VCE(sat). Optimal for low voltage operation. A L Complementary to 2SA1577 3 3 Top View C B 1 1 2 2 K E MECHANICAL DATA D Terminals Solderable per MIL-STD-202,

2SC4098 0.05A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Low Collector Capacitance. High Gain. A L 3 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank 2SC4098-N 2SC4098-P 2SC4098-Q D Range 56 120 82 180 120 270 H J F G Marking

2SC4097 TRANSISTOR (NPN) SOT-323 3 FEATURES High ICMax. ICMax=0.5A 1 Low VCE(sat).Optimal for low voltage operation. 2 Complements the 2SA1577 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collec

2 SC4098 TRANSISTOR (NPN) FEATURES SOT 323 Low Collector Capacitance High Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO 1. BASE V Collector-Emitter Voltage 25 V 2. EMITTER CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 200 m

2SC4097 SOT-323 Transistor(NPN) 1. BASE SOT-323 2. EMITTER 3. COLLECTOR Features High ICMax. ICMax=0.5A Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1577 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V Dimensions in inches and (millimeters) VEBO

SMD Type Transistors NPN Transistors 2SC4097 Features High ICMax.ICMax. = 0.5A Low VCE(sat). Complementary to 2SA1577 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A

CHENMKO ENTERPRISE CO.,LTD 2SC4097GP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability