2SC4095 Datasheet. Specs and Replacement

Type Designator: 2SC4095  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector Current |Ic max|: 0.035 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SP1

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2SC4095 datasheet

 ..1. Size:95K  nec

2sc4095.pdf pdf_icon

2SC4095

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4095 is an NPN epitaxial silicon transistor designed for use in (Units mm) low-noise and small signal amplifiers from VHF band to UHF band. +0.2 2SC4095 features excellent power gain with very low-noise figures. 2.8... See More ⇒

 ..2. Size:247K  nec

ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf pdf_icon

2SC4095

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l... See More ⇒

 8.1. Size:175K  1

2sc4096.pdf pdf_icon

2SC4095

Power Transistors 2SC4096 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum R... See More ⇒

 8.2. Size:257K  nec

ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf pdf_icon

2SC4095

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application... See More ⇒

Detailed specifications: 2SC4088, 2SC4089, 2SC409, 2SC4090, 2SC4091, 2SC4092, 2SC4093, 2SC4094, 8050, 2SC4096, 2SC4097, 2SC4098, 2SC4099, 2SC41, 2SC410, 2SC4100M, 2SC4100N

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