2N21 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2N21 Даташит. Аналоги

   Наименование производителя: 2N21
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.12 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимальный постоянный ток коллектора (Ic): 0.04 A
   Предельная температура PN-перехода (Tj): 85 °C
   Граничная частота коэффициента передачи тока (ft): 1 MHz
   Статический коэффициент передачи тока (hfe): 35
   Корпус транзистора: TO22

Аналоги (замена) для 2N21

- подбор биполярного транзистора по параметрам

2N21 Datasheet (PDF)

0.1. Size:626K rca
2n2148.pdf pdf_icon

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2n2102.pdf pdf_icon

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2n219.pdf pdf_icon

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2n217.pdf pdf_icon

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2n215.pdf pdf_icon

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2n218.pdf pdf_icon

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2n2147.pdf pdf_icon

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2n2102.pdf pdf_icon

2N2102EPITAXIAL PLANAR NPN GENERAL PURPOSE AMPLIFIER ANDSWITCHDESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintended for a wide variety of small-signall andmedium power applications in military andindustrial equipments.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collec

0.9. Size:47K st
2n2102 .pdf pdf_icon

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2n2102-a.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

0.11. Size:141K ixys
de475-102n21a.pdf pdf_icon

DE475-102N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt VDSS = 1000 V Nanosecond Switching ID25 = 24 A 30MHz Maximum Frequency RDS(on) Symbol Test Conditions Maximum Ratings 0.45 TJ = 25C to 150C VDSS 1000 V PDC = 1800W TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V T

0.12. Size:11K semelab
2n2102.pdf pdf_icon

2N2102Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 65V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

0.13. Size:164K isahaya
rt2n21m.pdf pdf_icon

RT2N21M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N21M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

0.14. Size:227K cdil
2n2102.pdf pdf_icon

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N2102TO-39Metal Can PackageAmplifier TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 65 VCollector Emitter Voltage, RBE

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2n2150 2n2151.pdf pdf_icon

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/277 Devices Qualified Level 2N2150 2N2151 JANTX MAXIMUM RATINGS (TC = 250C unless otherwise noted) Ratings Symbol Value Units Collector-Emitter Voltage 100 Vdc VCEO Collector-Base Voltage 150 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Base Current I 2.0 Adc B Collector Current 2.0 Adc IC To

Другие транзисторы... 2N2093 , 2N2094 , 2N2094A , 2N2095 , 2N2096 , 2N2097 , 2N2098 , 2N2099 , B647 , 2N2100 , 2N2100A , 2N2101 , 2N2102 , 2N2102A , 2N2102L , 2N2102S , 2N2104 .