Ordering number:EN2546ANPN Triple Diffused Planar Silicon Transistor2SC4172500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2049C Wide ASO.[2SC4172] Suitable for sets whose height is restricted.10.24.51.31.20.80.41 2 3 1 : Base2 : Collector3 : Emitter2.55 2

2SC4177 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain. AL High Voltage. 33 Complementary to 2SA1611 Top View C B 11 22K EAPPLICATIONS General Purpose Amplification DH JF GCLASSIFICATION OF hFE M

2SC4177TRANSISTOR (NPN)FEATURES High DC Current Gain SOT323 Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 60 V CBO3. COLLECTOR V Collector-Emitter Voltage 50 V CEOV Emitter-Base Voltage

SMD Type TransistorsNPN Transistors2SC4177 Features High DC Current Gain:hFE=200(typ) High Voltage:VCEO=50V Complementary to 2SA16111 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Conti

2SC4177NPN Plastic-Encapsulate TransistorsEncapsulate Transistors FEATURES High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) unless otherwise noted)ELECTRICAL CHARACTERISTICS (Ta=25ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) *Pulse test

2SC41772SC41772SC41772SC4177TRANSISTOR(NPN)2SC417 7FEATURESSOT323 3 High DC Current Gain Complementary to 2SA1611 High Voltage 1. BASE 12. EMITTER APPLICATIONS23. COLLECTOR General Purpose Amplification MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector-Emitter Vo