All Transistors. 2SC4170 Datasheet

 

2SC4170 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4170
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: SP1

 2SC4170 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4170 Datasheet (PDF)

 8.1. Size:100K  sanyo
2sc4171.pdf

2SC4170
2SC4170

 8.2. Size:109K  sanyo
2sc4172.pdf

2SC4170
2SC4170

Ordering number:EN2546ANPN Triple Diffused Planar Silicon Transistor2SC4172500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2049C Wide ASO.[2SC4172] Suitable for sets whose height is restricted.10.24.51.31.20.80.41 2 3 1 : Base2 : Collector3 : Emitter2.55 2

 8.3. Size:294K  nec
2sc4175.pdf

2SC4170
2SC4170

 8.4. Size:211K  nec
2sc4178.pdf

2SC4170
2SC4170

 8.5. Size:270K  nec
2sc4176.pdf

2SC4170
2SC4170

 8.6. Size:256K  nec
2sc4177.pdf

2SC4170
2SC4170

 8.7. Size:238K  nec
2sc4173.pdf

2SC4170
2SC4170

 8.8. Size:290K  nec
2sc4179.pdf

2SC4170
2SC4170

 8.9. Size:103K  secos
2sc4177.pdf

2SC4170

2SC4177 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain. AL High Voltage. 33 Complementary to 2SA1611 Top View C B 11 22K EAPPLICATIONS General Purpose Amplification DH JF GCLASSIFICATION OF hFE M

 8.10. Size:450K  htsemi
2sc4177.pdf

2SC4170

2SC4177TRANSISTOR (NPN)FEATURES High DC Current Gain SOT323 Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 60 V CBO3. COLLECTOR V Collector-Emitter Voltage 50 V CEOV Emitter-Base Voltage

 8.11. Size:2818K  kexin
2sc4177.pdf

2SC4170
2SC4170

SMD Type TransistorsNPN Transistors2SC4177 Features High DC Current Gain:hFE=200(typ) High Voltage:VCEO=50V Complementary to 2SA16111 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Conti

 8.12. Size:621K  cn shikues
2sc4177l4 2sc4177l5 2sc4177l6 2sc4177l7.pdf

2SC4170
2SC4170

2SC4177NPN Plastic-Encapsulate TransistorsEncapsulate Transistors FEATURES High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) unless otherwise noted)ELECTRICAL CHARACTERISTICS (Ta=25ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) *Pulse test

 8.13. Size:6366K  cn twgmc
2sc4177l4 2sc4177l5 2sc4177l6 2sc4177l7.pdf

2SC4170
2SC4170

2SC41772SC41772SC41772SC4177TRANSISTOR(NPN)2SC417 7FEATURESSOT323 3 High DC Current Gain Complementary to 2SA1611 High Voltage 1. BASE 12. EMITTER APPLICATIONS23. COLLECTOR General Purpose Amplification MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector-Emitter Vo

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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