2SC4255 - Даташиты. Аналоги. Основные параметры

2SC4250FV TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250FV TV VHF Mixer Applications Unit mm 1.2 0.05 Low reverse transfer capacitance Cre = 0.45 pF (typ.) 0.8 0.05 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 2 3 Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Coll

2SC4252 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4252 TV Tuner, VHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V

2SC4251 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4251 TV Tuner, VHF Oscillator Applications Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 100 mW Ju

2SC4250 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250 TV VHF Mixer Applications Unit mm High conversion gain Gce = 25dB (typ.) Low reverse transfer capacitance C = 0.45 pF (typ.) re Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO

2SC4253 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 TV Final Picture IF Amplifier Applications Unit mm Good linearity of fT Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 25 mA Collector

Ordering number EN2925A NPN Triple Diffused Planar Silicon Transistor 2SC4257 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4257] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 E

Ordering number EN2924A NPN Triple Diffused Planar Silicon Transistor 2SC4256 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4256] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 0.8 1 Base 0.4 2 Collector 1 2 3 3 Em

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INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4251 DESCRIPTION High f T- f = 1100 MHz TYP. T Low Output Capacitance- C = 0.9 pF TYP. OB 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION High Conversion Gain- Gce = 25 dB TYP. Low Reverse Transfer Capacitance- Cre = 0.45 pF TYP. APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter