2SC426 datasheet, аналоги, основные параметры
Наименование производителя: 2SC426 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.3 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO5
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Аналоги (замена) для 2SC426
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2SC426 даташит
0.1. Size:107K sanyo
2sc4269.pdf 
Ordering number EN2969A NPN Epitaxial Planar Silicon Transistor 2SC4269 VHF Converter, Local Oscillator Applications Features Package Dimensions High power gain PG=15dB typ (f=0.4GHz) unit mm High cutoff frequency fT=1.2GHz typ 2018B [2SC4269] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Collector SANYO CP Specifications Absolute Maximum
0.2. Size:24K hitachi
2sc4265.pdf 
2SC4265 Silicon NPN Epitaxial Application VHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4265 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 m
0.3. Size:24K hitachi
2sc4261.pdf 
2SC4261 Silicon NPN Epitaxial Application UHF Local oscillator Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4261 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperatu
0.4. Size:24K hitachi
2sc4262.pdf 
2SC4262 Silicon NPN Epitaxial Application UHF / VHF Local oscillator Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4262 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction tem
0.5. Size:24K hitachi
2sc4260.pdf 
2SC4260 Silicon NPN Epitaxial Application UHF frequency converter, Wide band amplifier Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4260 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 13 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 10
0.6. Size:24K hitachi
2sc4264.pdf 
2SC4264 Silicon NPN Epitaxial Application VHF / UHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4264 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC
0.7. Size:886K kexin
2sc4269.pdf 
SMD Type Transistors NPN Transistors 2SC4269 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
0.8. Size:177K inchange semiconductor
2sc4265.pdf 
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4265 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO
0.9. Size:167K inchange semiconductor
2sc4261.pdf 
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4261 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 25 V CBO V Collector-Emitter
0.10. Size:167K inchange semiconductor
2sc4262.pdf 
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4262 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO V Collector-Emi
0.11. Size:220K inchange semiconductor
2sc4260.pdf 
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4260 DESCRIPTION Low Noise High Gain APPLICATIONS Designed for use in UHF frequency converter , wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 13 V VEBO Emitter-Base Voltage 3.0 V
0.12. Size:177K inchange semiconductor
2sc4264.pdf 
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4264 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V
Другие транзисторы: 2SC4252, 2SC4253, 2SC4254, 2SC4255, 2SC4256, 2SC4257, 2SC4258, 2SC4259, MJE350, 2SC4260, 2SC4261, 2SC4262, 2SC4263, 2SC4264, 2SC4265, 2SC4266, 2SC4269
