Биполярный транзистор 2SC4269 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4269
Маркировка: JT2_JT3_JT4
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 1200 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO236
2SC4269 Datasheet (PDF)
2sc4269.pdf
Ordering number:EN2969ANPN Epitaxial Planar Silicon Transistor2SC4269VHF Converter,Local Oscillator ApplicationsFeatures Package Dimensions High power gain : PG=15dB typ (f=0.4GHz)unit:mm High cutoff frequency : fT=1.2GHz typ2018B[2SC4269]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : CollectorSANYO : CPSpecificationsAbsolute Maximum
2sc4269.pdf
SMD Type TransistorsNPN Transistors2SC4269SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc4265.pdf
2SC4265Silicon NPN EpitaxialApplicationVHF RF amplifier, Local oscillator, MixerOutlineCMPAK311. Emitter2. Base23. Collector2SC4265Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 100 m
2sc4261.pdf
2SC4261Silicon NPN EpitaxialApplicationUHF Local oscillatorOutlineCMPAK311. Emitter2. Base23. Collector2SC4261Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 100 mWJunction temperatu
2sc4262.pdf
2SC4262Silicon NPN EpitaxialApplicationUHF / VHF Local oscillatorOutlineCMPAK311. Emitter2. Base23. Collector2SC4262Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 100 mWJunction tem
2sc4260.pdf
2SC4260Silicon NPN EpitaxialApplicationUHF frequency converter, Wide band amplifierOutlineCMPAK311. Emitter2. Base23. Collector2SC4260Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 13 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 10
2sc4264.pdf
2SC4264Silicon NPN EpitaxialApplicationVHF / UHF RF amplifier, Local oscillator, MixerOutlineCMPAK311. Emitter2. Base23. Collector2SC4264Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC
2sc4265.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4265DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF RF amplifier, local oscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBO
2sc4261.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4261DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 25 VCBOV Collector-Emitter
2sc4262.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4262DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF~ VHF local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emi
2sc4260.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4260 DESCRIPTION Low Noise High Gain APPLICATIONS Designed for use in UHF frequency converter , wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 13 V VEBO Emitter-Base Voltage 3.0 V
2sc4264.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4264DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF ~VHF RF amplifier, localoscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 V
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