2SC4289 datasheet, аналоги, основные параметры
Наименование производителя: 2SC4289 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 200 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 16 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Ёмкость коллекторного перехода (Cc): 400 pf
Статический коэффициент передачи тока (hFE): 8
Корпус транзистора: TO264
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2SC4289 даташит
2sc4288.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SC4288 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
2sc4250fv.pdf
2SC4250FV TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250FV TV VHF Mixer Applications Unit mm 1.2 0.05 Low reverse transfer capacitance Cre = 0.45 pF (typ.) 0.8 0.05 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 2 3 Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Coll
2sc4207.pdf
2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit mm Small package (dual type) High voltage and high current VCEO = 50 V, IC = 150 mA (max) High hFE hFE = 120 700 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1618 Absolut
2sc4215.pdf
2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.55 pF (typ.) Low noise figure NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Co
2sc4249.pdf
2SC4249 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4249 TV VHF RF Amplifier Applications Unit mm High gain Gpe = 24dB (typ.) (f = 200 MHz) Low noise NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter volta
2sc4213-a 2sc4213-b.pdf
2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse hFE Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) Low on resistance RON = 1 (typ.) (IB = 5 mA) High DC current gain hFE = 200 to 1200 Small package Absolute Maximum
2sc4252.pdf
2SC4252 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4252 TV Tuner, VHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V
2sc4245.pdf
2SC4245 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4245 TV Tuner, UHF Mixer Applications Unit mm VHF UHF Band RF Amplifier Applications Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Colle
2sc4246.pdf
2SC4246 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4246 TV Tuner, UHF Oscillator Applications (common base) Unit mm TV Tuner, UHF Converter Applications (common base) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter vo
2sc4251.pdf
2SC4251 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4251 TV Tuner, VHF Oscillator Applications Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 100 mW Ju
2sc4244.pdf
2SC4244 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4244 UHF TV Tuner RF Amplifier Applications Unit mm Low noise figure NF = 4dB (typ.) High power gain Gpb = 17dB (typ.) Excellent forward AGC characteristics Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20
2sc4213.pdf
2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B High DC current gain hFE = 200 1200 Small package Maximum Ra
2sc4248.pdf
2SC4248 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4248 TV Tuner, UHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V
2sc4250.pdf
2SC4250 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250 TV VHF Mixer Applications Unit mm High conversion gain Gce = 25dB (typ.) Low reverse transfer capacitance C = 0.45 pF (typ.) re Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO
2sc4253.pdf
2SC4253 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 TV Final Picture IF Amplifier Applications Unit mm Good linearity of fT Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 25 mA Collector
2sc4203.pdf
2SC4203 TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC4203 Video Output for High Definition VDT Unit mm High Speed Switching Applications High transition frequency fT = 400 MHz (typ.) (V = 10 V, I = 70 mA) CE C Low output capacitance C
2sc4209.pdf
2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4209 Driver Stage Amplifier Applications Unit mm Voltage Amplifier Applications Complementary to 2SA1620 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 30
2sc4214.pdf
2SC4214 TOSHIBA Transistor Silicon NPN Planar Type 2SC4214 UHF TV Tuner RF Amplifier Applications Unit mm Low noise figure NF = 2.8dB (typ.) High power gain V = 4.5 V G = 15dB (typ.) CC pb Excellent forward AGC characteristics Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage V
2sc4247.pdf
2SC4247 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4247 TV Tuner, UHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V
2sc4210.pdf
2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4210 Audio Power Amplifier Applications Unit mm High DC current gain hFE = 100 320 Complementary to 2SA1621 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector curre
2sc4220.pdf
Ordering number EN2825A NPN Triple Diffused Planar Silicon Transistor 2SC4220 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4220] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4
2sc4222.pdf
Ordering number EN2761A NPN Triple Diffused Planar Silicon Transistor 2SC4222 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4222] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4
2sc4270.pdf
Ordering number EN2971 NPN Epitaxial Planar Silicon Transistor 2SC4270 UHF Converter, Local Oscillator Applications Features Package Dimensions Small noise figure NF=3.0dB typ (f=0.9GHz) unit mm High power gain PG=12dB typ (f=0.9GHz) 2018B High cutoff frequency fT=3.0GHz typ [2SC4270] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Collect
2sc4204.pdf
Ordering number EN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers. unit mm 2003B Features [2SC4204] 5.0 Adoption of MBIT process. 4.0 4.0 High DC current gain (hFE=800 to 3200). Large current capacity (IC=0.7A). Low collector-to-emitter saturation voltage 0.
2sc4221.pdf
Ordering number EN2816B NPN Triple Diffused Planar Silicon Transistor 2SC4221 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4221] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4
2sc4219.pdf
Ordering number EN2709 NPN Triple Diffused Planar Silicon Transistor 2SC4219 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability unit mm (VCEO 400V). 2049C Fast switching speed (tf=0.1 s typ). [2SC4219] Wide ASO. 10.2 4.5 1.3 Adoption of MBIT process. Suitable for sets whose height is restricted.
2sc4224.pdf
Ordering number EN2763A NPN Triple Diffused Planar Silicon Transistor 2SC4224 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4224] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4
2sc4272.pdf
Ordering number EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions Small size making it easy to provide high-density, unit mm small-sized hybrid ICs. 2038A [2SC4272] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2 Collector 3 Emitter SANYO PCP (Bottom view) Specifications Absolute Ma
2sc4257.pdf
Ordering number EN2925A NPN Triple Diffused Planar Silicon Transistor 2SC4257 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4257] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 E
2sc4269.pdf
Ordering number EN2969A NPN Epitaxial Planar Silicon Transistor 2SC4269 VHF Converter, Local Oscillator Applications Features Package Dimensions High power gain PG=15dB typ (f=0.4GHz) unit mm High cutoff frequency fT=1.2GHz typ 2018B [2SC4269] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Collector SANYO CP Specifications Absolute Maximum
2sc4256.pdf
Ordering number EN2924A NPN Triple Diffused Planar Silicon Transistor 2SC4256 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4256] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 0.8 1 Base 0.4 2 Collector 1 2 3 3 Em
2sc4293.pdf
Ordering number EN2963 NPN Triple Diffused Planar Silicon Transistor 2SC4293 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=300ns max). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC4293] Adoption of MBIT process. 16.0 5.6 3.4 On-chip
2sc4223.pdf
Ordering number EN2762A NPN Triple Diffused Planar Silicon Transistor 2SC4223 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4223] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.
2sc4217.pdf
Ordering number EN2968 NPN Triple Diffused Planar Silicon Transistor 2SC4217 Color TV Chroma Output and Audio Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Micaless package facilitating easy mounting. 2042A [2SC4217] B Base C Collector E Emitter SANYO TO-126ML Specifications Absolute Maximum Ratings at Ta = 25 C
2sc4291.pdf
Ordering number EN2679A NPN Triple Diffused Planar Silicon Transistor 2SC4291 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=0.3 s max). unit mm High breakdown voltage (VCBO=1500V). 2022A High reliability (adoption of HVP process). [2SC4291] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0
2sc4271.pdf
Ordering number EN2710A NPN Epitaxial Planar Silicon Transistor 2SC4271 High-Definition CRT Display Video Output Applications Applications Package Dimensions Wide-band amplifiers. unit mm High frequency drivers. 2009B [2SC7271] Features High fT (fT=2.2GHz typ) High current (IC=300mA) Adoption of FBET process. 1 Emitter JEDEC TO-126 2 Collector 3 Bas
ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf
NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application
ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf
NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l
2sc4226.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES
2sc4227.pdf
DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. 2.1 0.1 It is suitable for a high density surface mount assembly since the 1.25 0.1 transistor has been applied small
2sc4228.pdf
DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. It is suitable for a high density surface mount assembly since the 2.1 0.1 transistor has been applied super mini mold pa
2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf
NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a
2sc4225.pdf
DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band. 2.1 0.1 It has large dynamic range and good current characteristics. 1.25 0.1 FEATURES 2 Low Noise
2sc4215-y.pdf
MCC 2SC4215-R Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4215-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4215-Y Fax (818) 701-4939 Features Small reverse transfer capacitance Cre= 0.55pF(typ.) Low V oise figure NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian
2sc4215-o.pdf
MCC 2SC4215-R Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4215-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4215-Y Fax (818) 701-4939 Features Small reverse transfer capacitance Cre= 0.55pF(typ.) Low V oise figure NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian
2sc4215-r.pdf
MCC 2SC4215-R Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4215-O Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4215-Y Fax (818) 701-4939 Features Small reverse transfer capacitance Cre= 0.55pF(typ.) Low V oise figure NF=2dB (typ.) (f=100 MHz) NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Complian
2sc4208 e.pdf
Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit mm Complementary to 2SA1619 and 2SA1619A 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. Allowing supply with the radial taping. 0.7 0.1
2sc4212.pdf
Power Transistors 2SC4212 2SC4212 2SC4212 2SC4212 2SC4212 Silicon NPN triple diffusion planar type Unit mm For color TV horizontal deflection driver 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings TC = 25 C Parameter S
2sc4208.pdf
Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit mm Complementary to 2SA1619 and 2SA1619A 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. Allowing supply with the radial taping. 0.7 0.1
2sc4242.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC4242 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN POWER TRANSISTORS DESCRIPTION The UTC 2SC4242 is a high-voltage, high-speed switching power transistor and designed particularly for 115 and 220V switch mode applications, such as switching regulators, inverters, DC-DC converter and general purpose power amplifiers. FEATURES * Low satura
2sc4274.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc4275.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc4276.pdf
FUJI POWER TRANSISTOR 2SC4276 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertor JEDEC - Solid state relay EIAJ SC-65 General purpose power amplifiers Maximum ratings and characteristics Absolute maximum ratings
2sc4265.pdf
2SC4265 Silicon NPN Epitaxial Application VHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4265 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 m
2sc4261.pdf
2SC4261 Silicon NPN Epitaxial Application UHF Local oscillator Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4261 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperatu
2sc4262.pdf
2SC4262 Silicon NPN Epitaxial Application UHF / VHF Local oscillator Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4262 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction tem
2sc4260.pdf
2SC4260 Silicon NPN Epitaxial Application UHF frequency converter, Wide band amplifier Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4260 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 13 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 10
2sc4264.pdf
2SC4264 Silicon NPN Epitaxial Application VHF / UHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4264 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC
2sc4215.pdf
2SC4215 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Small reverse transfer capacitance Cre = 0.55pF (typ.). A Low noise figure NF=2dB (typ.) (f=100 MHz) L 3 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank 2SC4215-R 2SC42
2sc4226.pdf
2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-323 Low noise A High gain L 3 Power dissipation.(PC=150mW) 3 Top View C B 1 1 2 2 K E APPLICATIONS High frequency low noise amplifier. D H J F G CLASSIFICATION OF hFE Pro
2sc4258.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an
2sc4215.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4215 TRANSISTOR (NPN) FEATURES 1. BASE Small reverse transfer capacitance Cre= 0.55pF(typ.) 2. EMITTER Low noise figure NF=2dB (typ.) (f=100 MHz) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base
2sc4297.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4297 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS
2sc4278.pdf
Power Transistors www.jmnic.com 2SC4278 Silicon NPN Transistors B C E Features With TO-247 package Complement to type 2SA1633 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 150 V VCER Emitter to base voltage VEB Emitter to base voltage 5 V IB Base Current IC Collector current-Contin
2sc4298.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4298 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS
2sc4296.pdf
2SC4296 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4296 Symbol Conditions 2SC4296 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 500 ICBO VCB=500V 100max V
2sc4297.pdf
2SC4297 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4297 Unit Symbol Conditions 2SC4297 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO V ICBO VCB=500V 100max A 50
2sc4299.pdf
2SC4299 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4299 Symbol Conditions 2SC4299 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 ICBO VCB=800V 100max A V VCEO 800 IE
2sc4298.pdf
2SC4298 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) 2SC4298 Symbol 2SC4298 Symbol Conditions Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 100max VCBO 500 ICBO VCB=500V
2sc4215.pdf
2SC4215 TRANSISTOR (NPN) SOT-323 FEATURES Small reverse transfer capacitance Cre= 0.55pF(typ.) Low noise figure NF=2dB (typ.) (f=100 MHz) 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Curre
2sc4215 sot-323.pdf
2SC4215 SOT-323 Transistor(NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features Small reverse transfer capacitance Cre= 0.55pF(typ.) Low noise figure NF=2dB (typ.) (f=100 MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO
2sc4215.pdf
2SC4215 NPN Silicon Transistor P b Lead(Pb)-Free 3 1 2 1. BASE 2. EMITTER FEATURES 3. COLLECTOR SOT-323(SC-70) * Power dissipation SOT-323 Outline Demensions Unit mm A SOT-323 Dim Min Max A 0.30 0.40 B C TOP VIEW B 1.15 1.35 C 2.00 2.40 D - 0.65 D E 0.30 0.40 G E G 1.20 1.40 H H 1.80 2.20 J 0.00 0.10 K K 0.80 1.00 L 0.42 0.53 L M 0.10 0.25 J M WEITRON 1/4 2
l2sc4226t1g.pdf
LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirements. S- Prefix
2sc4270.pdf
SMD Type Transistors NPN Transistors 2SC4270 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect
2sc4226.pdf
SMD Type Transistors NPN Transistors 2SC4226 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 m
2sc4272.pdf
SMD Type Transistors NPN Transistors 2SC4272 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=45V 0.42 0.1 0.46 0.1 Small Size Making It Easy To Provide High-Density, To Provide High-Density, 1.Base 27MHz CB Transceiver Driver Applications 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra
2sc4269.pdf
SMD Type Transistors NPN Transistors 2SC4269 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc4209.pdf
SMD Type Transistors NPN Transistors 2SC4209 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=80V +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to 2SA1620 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector
2sc4210.pdf
SMD Type Transistors NPN Transistors 2SC4210 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=30V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 Complementary to 2SA1621 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -
2sc4228a 2sc4228b 2sc4228c 2sc4228d 2sc4228e.pdf
2SC4228 NPN 2SC4228 NPN SOT-323 VHF UHF S21e 2 5.5 dB @ VCE=3V IC=5mA f=2GHz
2sc4226-r24 2sc4226-r25 2sc4226-r26.pdf
2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3
2sc4226-r23 2sc4226-r24 2sc4226-r25.pdf
2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO
2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf
2SC4226 NPN SILICON RF TRANSISTOR External bipolar process, with high power gain process, with high power gain Low noise characteristics. The adoption of noise characteristics. The adoption of submit- niature SOT- 323 package, Especially suitable for Especially suitable for high density surface patch installation, mainly for installation, mainly for the VHF, UHF low noise ampli
2sc4237t8tl.pdf
2SC4237T8TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 7 V EBO I Collector Curr
2sc4237.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4237 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Vo
2sc4205.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4205 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications.
2sc4235.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4235 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALU
2sc4265.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4265 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO
2sc4274.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4274 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid state re
2sc4231.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4231 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RATIN
2sc4245.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4245 DESCRIPTION High Current-Gain Bandwidth Product f = 2400MHz TYP. @V = 10 V, I = 2 mA T CE C Low Noise 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV tuner , UHF mixer applications VHF UHF band RF amplifier applications ABSOLUTE MAXIMUM R
2sc4261.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4261 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 25 V CBO V Collector-Emitter
2sc4226.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4226 DESCRIPTION Low Collector Curren -I = 0.1A C Low Collector Power Pc=0.1W With SOT-323 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for broadband low noise amplifier ; wideband low noise amplifie ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
2sc4233.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4233 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RATIN
2sc4246.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4246 DESCRIPTION High Current-Gain Bandwidth Product f = 1500MHz TYP. @V = 10 V, I = 8 mA T CE C Low Noise 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV tuner , UHF oscillator applications TV tuner , UHF converter applications ABSOLUTE MAXIM
2sc4251.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4251 DESCRIPTION High f T- f = 1100 MHz TYP. T Low Output Capacitance- C = 0.9 pF TYP. OB 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc4262.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4262 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO V Collector-Emi
2sc4234.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4234 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RATIN
2sc4260.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4260 DESCRIPTION Low Noise High Gain APPLICATIONS Designed for use in UHF frequency converter , wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 13 V VEBO Emitter-Base Voltage 3.0 V
2sc4293.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4293 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed Built-in Damper Diode Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLU
2sc4236.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4236 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
2sc4227.pdf
isc Silicon NPN RF Transistor 2SC4227 DESCRIPTION Low Noise NF = 1.4 dB TYP., @V = 3 V, I = 7 mA, f = 1.0 GHz CE C High Gain S 2 = 12 dB TYP. @V = 3 V, I = 7 mA, f = 1.0 GHz 21e CE C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc4242.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4242 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Collector-Emitter Saturation Voltage- V = 0.8V(Max.)@ I = 4.0A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i
2sc4273.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4273 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed High Reliability Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convert
2sc4250.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION High Conversion Gain- Gce = 25 dB TYP. Low Reverse Transfer Capacitance- Cre = 0.45 pF TYP. APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter
2sc4264.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4264 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V
2sc4278.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4278 DESCRIPTION With TO-247 package Complement to type 2SA1633 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolut
2sc4228.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4228 DESCRIPTION High f T 8.0GHz TYP. @V = 3 V, I = 5 mA, f = 2 GHz CE C Low C re 0.3pF TYP., @V = 3 V, I = 0, f = 1 MHz CB E High S 2 21e 7.5 dB TYP. @V = 3 V, I = 5 mA, f = 2 GHz CE C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f
2sc4232.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4232 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RATIN
2sc4298.pdf
isc Silicon NPN Power Transistor 2SC4298 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc4230.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4230 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RAT
2sc4275.pdf
isc Silicon NPN Power Transistor 2SC4275 DESCRIPTION Low saturation voltage High Switching Speed High reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High speed DC-DC converter applications Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATIN
2sc4276.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 DESCRIPTION With TO-3PN package High voltage ,high speed Low collector saturation voltage High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 m
2sc4294.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4294 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output
2sc4237.pdf
isc Silicon NPN Power Transistor 2SC4237 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V C
2sc4247.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4247 DESCRIPTION High Current-Gain Bandwidth Product f = 4 GHz TYP. @V = 10 V, I = 10 mA T CE C Low Noise 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner , UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
Другие транзисторы: 2SC4278, 2SC428, 2SC4284, 2SC4285, 2SC4286, 2SC4287, 2SC4288, 2SC4288A, 13007, 2SC4289A, 2SC429, 2SC4290, 2SC4290A, 2SC4291, 2SC4292, 2SC4293, 2SC4294
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