2SC4427. Аналоги и основные параметры
Наименование производителя: 2SC4427
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимальный постоянный ток коллектора (Ic): 4.5 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 15 MHz
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: TO218
Аналоги (замена) для 2SC4427
- подборⓘ биполярного транзистора по параметрам
2SC4427 даташит
..1. Size:108K sanyo
2sc4427.pdf 
Ordering number EN2850 NPN Triple Diffused Planar Silicon Transistor 2SC4427 800V/4.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4427] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0
..2. Size:196K inchange semiconductor
2sc4427.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4427 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )
8.1. Size:106K sanyo
2sc4428.pdf 
Ordering number EN2851 NPN Triple Diffused Planar Silicon Transistor 2SC4428 800V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4428] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2
8.2. Size:107K sanyo
2sc4429.pdf 
Ordering number EN2852 NPN Triple Diffused Planar Silicon Transistor 2SC4429 800V/8A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4429] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2
8.3. Size:101K sanyo
2sc4425.pdf 
Ordering number EN2848 NPN Triple Diffused Planar Silicon Transistor 2SC4425 400V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4425] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0
8.4. Size:105K sanyo
2sc4426.pdf 
Ordering number EN2849 NPN Triple Diffused Planar Silicon Transistor 2SC4426 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4426] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2
8.5. Size:104K sanyo
2sc4424.pdf 
Ordering number EN2847 NPN Triple Diffused Planar Silicon Transistor 2SC4424 400V/16A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4424] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0
8.6. Size:102K sanyo
2sc4423.pdf 
Ordering number EN2854 NPN Triple Diffused Planar Silicon Transistor 2SC4423 400V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2039D Wide ASO. [2SC4423] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0
8.7. Size:82K panasonic
2sc4420.pdf 
Power Transistors 2SC4420 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the hea
8.8. Size:48K hitachi
2sc4422.pdf 
2SC4422 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4422 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipa
8.10. Size:998K kexin
2sc4422.pdf 
SMD Type Transistors NPN Transistors 2SC4422 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=11V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 11 V Emitter - Base Voltage VE
8.11. Size:195K inchange semiconductor
2sc4428.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4428 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )
8.12. Size:225K inchange semiconductor
2sc4429.pdf 
isc Silicon NPN Power Transistor 2SC4429 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo
8.13. Size:184K inchange semiconductor
2sc4421.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4421 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RA
8.14. Size:195K inchange semiconductor
2sc4425.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4425 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applicatio
8.15. Size:195K inchange semiconductor
2sc4426.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4426 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )
8.16. Size:221K inchange semiconductor
2sc4424.pdf 
isc Silicon NPN Power Transistor 2SC4424 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
8.17. Size:221K inchange semiconductor
2sc4423.pdf 
isc Silicon NPN Power Transistor 2SC4423 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
Другие транзисторы: 2SC442, 2SC4420, 2SC4421, 2SC4422, 2SC4423, 2SC4424, 2SC4425, 2SC4426, BC556, 2SC4428, 2SC4429, 2SC443, 2SC4430, 2SC4432, 2SC4432-3, 2SC4432-4, 2SC4432-5
