2SC4427 Todos los transistores

 

2SC4427 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4427

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 1100 V

Tensión colector-emisor (Vce): 800 V

Corriente del colector DC máxima (Ic): 4.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 15 MHz

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: TO218

Búsqueda de reemplazo de transistor bipolar 2SC4427

 

2SC4427 Datasheet (PDF)

1.1. 2sc4427.pdf Size:108K _sanyo

2SC4427
2SC4427

Ordering number:EN2850 NPN Triple Diffused Planar Silicon Transistor 2SC4427 800V/4.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf : 0.1 s typ). 2039D Wide ASO. [2SC4427] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2.0 1.0

1.2. 2sc4427.pdf Size:245K _inchange_semiconductor

2SC4427
2SC4427

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4427 DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-E

 4.1. 2sc4429.pdf Size:107K _sanyo

2SC4427
2SC4427

Ordering number:EN2852 NPN Triple Diffused Planar Silicon Transistor 2SC4429 800V/8A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf : 0.1 s typ). 2039D Wide ASO. [2SC4429] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2.0 1.0

4.2. 2sc4425.pdf Size:101K _sanyo

2SC4427
2SC4427

Ordering number:EN2848 NPN Triple Diffused Planar Silicon Transistor 2SC4425 400V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf : 0.1 s typ). 2039D Wide ASO. [2SC4425] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2.0 1.0

 4.3. 2sc4423.pdf Size:102K _sanyo

2SC4427
2SC4427

Ordering number:EN2854 NPN Triple Diffused Planar Silicon Transistor 2SC4423 400V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf : 0.1 s typ). 2039D Wide ASO. [2SC4423] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2.0 1.0

4.4. 2sc4428.pdf Size:106K _sanyo

2SC4427
2SC4427

Ordering number:EN2851 NPN Triple Diffused Planar Silicon Transistor 2SC4428 800V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf : 0.1 s typ). 2039D Wide ASO. [2SC4428] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2.0 1.0

 4.5. 2sc4424.pdf Size:104K _sanyo

2SC4427
2SC4427

Ordering number:EN2847 NPN Triple Diffused Planar Silicon Transistor 2SC4424 400V/16A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf : 0.1 s typ). 2039D Wide ASO. [2SC4424] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2.0 1.0

4.6. 2sc4426.pdf Size:105K _sanyo

2SC4427
2SC4427

Ordering number:EN2849 NPN Triple Diffused Planar Silicon Transistor 2SC4426 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf : 0.1 s typ). 2039D Wide ASO. [2SC4426] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2.0 1.0

4.7. 2sc4420.pdf Size:82K _panasonic

2SC4427
2SC4427

Power Transistors 2SC4420 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO ? 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink w

4.8. 2sc4422.pdf Size:48K _hitachi

2SC4427
2SC4427

2SC4422 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4422 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation

4.9. 2sc4421.pdf Size:65K _no

2SC4427

4.10. 2sc4421.pdf Size:262K _inchange_semiconductor

2SC4427
2SC4427

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4421 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V V

4.11. 2sc4429.pdf Size:319K _inchange_semiconductor

2SC4427
2SC4427

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4429 DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-E

4.12. 2sc4425.pdf Size:287K _inchange_semiconductor

2SC4427
2SC4427

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4425 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collec

4.13. 2sc4423.pdf Size:156K _inchange_semiconductor

2SC4427
2SC4427

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4423 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absol

4.14. 2sc4428.pdf Size:285K _inchange_semiconductor

2SC4427
2SC4427

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4428 DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-E

4.15. 2sc4424.pdf Size:157K _inchange_semiconductor

2SC4427
2SC4427

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4424 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide ASO. APPLICATIONS ·Switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(T

4.16. 2sc4426.pdf Size:285K _inchange_semiconductor

2SC4427
2SC4427

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4426 DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-E

4.17. 2sc4422.pdf Size:998K _kexin

2SC4427
2SC4427

SMD Type Transistors NPN Transistors 2SC4422 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=11V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 11 V Emitter - Base Voltage VE

Otros transistores... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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