2SC46 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2SC4617/D Preliminary Information 2SC4617 NPN Silicon General Purpose Amplifier Transistor NPN GENERAL This NPN transistor is designed for general purpose amplifier applications. PURPOSE AMPLIFIER This device is housed in the SOT-416/SC 90 package which is designed for TRANSISTORS low power surface mount applications, wh

2SC4690 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications Unit mm High breakdown voltage V = 140 V (min) CEO Complementary to 2SA1805 Suitable for use in 70-W high fidelity audio amplifier s output stage Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter v

2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain h = 800 to 3200 (V = 2 V, I = 0.5 A) FE (1) CE C h = 250 (V = 2 V, I = 4 A) FE (2) CE C Low collector saturation voltage V = 0.5 V (max) (I = 4 A, I = 40 mA) CE (sat) C B High power dissipation P

2SC4667 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4667 Ultra High Speed Switching Applications Unit mm Computer, Counter Applications High transition frequency fT = 400 MHz (typ.) Low saturation voltage V = 0.3 V (max) CE (sat) High speed switching time t = 15 ns (typ.) stg Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol R

2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Unit mm Medium Power Amplifier Applications Excellent hFE linearity h = 200 to 600 (V = 2 V, I = 0.5 A) FE (1) CE C h = 140 (min), 200 (typ.) (V = 2 V, I = 3 A) FE (2) CE C Low collector saturation voltage V = 0.5 V (max) (I = 3 A, I = 60 mA) CE (sat) C B Compleme

2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications Unit mm High-Voltage Switching Applications High-Voltage Amplifier Applications High voltage VCEO = 1200 V (max) Small collector output capacitance Cob = 2.2 pF (typ.) (VCB = 100 V) Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating U

2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Unit mm Switching Applications High hFE h = 600 3600 FE High voltage V = 50 V CEO High collector current I = 150 mA (max) C Small package Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage V

Ordering number EN4692 NPN Epitaxial Planar Silicon Transistor 2SC4660 High-Definition CRT Display Video Output Driver Applications Features Package Dimensions High fT (fT=2.2GHz typ) unit mm Large current (IC=300mA) 2042B Adoption of FBET process. [2SC4660] 8.0 4.0 3.3 1.0 1.0 3.0 1.6 0.8 0.8 0.75 0.7 1 Emitter 2 Collector 3 Base 2.4 4.8 SANYO TO-1

Ordering number EN3699A NPN Triple Diffused Planar Silicon Transistor 2SC4630 900V/100mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit mm Small Cob (typical Cob=2.8pF). 2079B Full isolation package. [2SC4630] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.

Ordering number EN3705A NPN Triple Diffused Planar Silicon Transistor 2SC4636 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1800V). unit mm Small Cob (typical Cob=1.4pF). 2079B Full-isolation package. [2SC4636] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0

Ordering number EN3706A NPN Triple Diffused Planar Silicon Transistor 2SC4637 1800V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1800V). unit mm Small Cob (typical Cob=1.8pF). 2079B Full-isolation package. [2SC4637] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0

Ordering number EN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions Adoption of MBIT process. unit mm High breakdown voltage and large current capacity. 2064 [2SA1770/2SC4614] E Emitter C Collector B Base ( ) 2SA1770 SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C P

Ordering number EN3704A NPN Triple Diffused Planar Silicon Transistor 2SC4635 1500V/20mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1500V). unit mm Small Cob (typical Cob=1.9pF). 2079B Full-isolation package. [2SC4635] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0

Ordering number ENN3705B 2SC4636LS NPN Triple Diffused Planar Silicon Transistor 2SC4636LS 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1800V). unit mm Small Cob(typical Cob=1.4pF). 2079D Full-isolation package. [2SC4636LS] High reliability(Adoption of HVP process). 10.0 4.

Ordering number EN3708 NPN Epitaxial Planar Silicon Transistor 2SC4675 20V/8A Switching Applications Features Package Dimensions Adoption of MBIT process. unit mm Low saturation voltage. 2042B Fast switching speed. [2SC4675] Large current capacity. 8.0 4.0 3.3 1.0 1.0 3.0 1.6 0.8 0.8 0.75 0.7 1 Emitter 2 Collector 3 Base 2.4 4.8 SANYO TO-126ML

Ordering number EN3146 NPN Triple Diffused Planar Silicon Transistor 2SC4600 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4600] cesses for 2SC4600-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC

Ordering number ENN3704B 2SC4635LS NPN Triple Diffused Planar Silicon Transistor 2SC4635LS 1500V / 20mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1500V). unit mm Small Cob(typical Cob=1.9pF). 2079D Full-isolation package. [2SC4635LS] High reliability(Adoption of HVP process). 10.0 4.

Ordering number EN3398A 2SA1772 PNP Epitaxial Planar Silicon Transistor 2SC4615 NPN Triple Diffused Planar Silicon Transistor 2SA1772/2SC4615 High-Voltage Driver Applications Features Package Dimensions Large current capacity (IC=1A). unit mm High breakdown votlage (VCEO 400V). 2045B [2SA1772/2SC4615] 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP uni

Ordering number EN3700A NPN Triple Diffused Planar Silicon Transistor 2SC4631 900V/300mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit mm Small Cob (typical Cob=5.0pF). 2079B Full-isolation package. [2SC4631] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.

Ordering number ENN3700B 2SC4631LS NPN Triple Diffused Planar Silicon Transistor 2SC4631LS 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=900V). unit mm Small Cob(typical Cob=5.0pF). 2079D Full-isolation package. [2SC4631LS] High reliability(Adoption of HVP process). 10.0 4.5

Ordering number ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions Adoption of MBIT process. unit mm High breakdown voltage and large current capacity. 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector ( ) 2SA1770 3 Base 2.54 2.54 Specificat

Ordering number EN3580A NPN Epitaxial Planar Silicon Darlington Transistor 2SC4696 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers. unit mm 2064A Features [2SC4696] 2.5 1.45 Darlington connection. 6.9 1.0 On-chip Zener diode of 90 10V between collector and base. High DC current gain. High inductive load handling capa

Ordering number EN3927 NPN Epitaxial Planar Silicon Transistor 2SC4673 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Features Package Dimensions Low noise figure NF=1.5dB typ (f=0.9GHz). unit mm 2 High power gain S21e =8.0dB typ (f=0.9GHz). 2038A High cutoff frequency fT=4.5GHz typ. [2SC4673] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base

Ordering number ENN3703B 2SC4634LS NPN Triple Diffused Planar Silicon Transistor 2SC4634LS 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1500V). unit mm Small Cob(typical Cob=1.5pF). 2079D Full-isolation package. [2SC4634LS] High reliability(Adoption of HVP process). 10.0 4.

Ordering number ENN3701B 2SC4632LS NPN Triple Diffused Planar Silicon Transistor 2SC4632LS 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1200V). unit mm Small Cob(typical Cob=1.6pF). 2079D Full-isolation package. [2SC4632LS] High reliability(Adoption of HVP process). 10.0 4.

Ordering number EN3703A NPN Triple Diffused Planar Silicon Transistor 2SC4634 1500V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1500V). unit mm Small Cob (typical Cob=1.5pF). 2079B Full-isolation package. [2SC4634] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0

Ordering number EN3702A NPN Triple Diffused Planar Silicon Transistor 2SC4633 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1200V). unit mm Small Cob (typical Cob=2.0pF). 2079B Full-isolation package. [2SC4633] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0

Ordering number ENN3706B 2SC4637LS NPN Triple Diffused Planar Silicon Transistor 2SC4637LS 1800V / 15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1800V). unit mm Small Cob(typical Cob=1.8pF). 2079D Full-isolation package. [2SC4637LS] High reliability(Adoption of HVP process). 10.0 4.

Ordering number EN3486 NPN Epitaxial Planar Silicon Transistor 2SC4695 Low-Frequency General-Purpose Amplifier, Muting Applications Features Package Dimensions Adoption of FBET process. unit mm High DC current gain. 2018B High VEBO (VEBO 25V). [2SC4695] High reverse hFE (150 typ). Small ON resistance [Ron=1 (IB=5mA)]. 0.4 0.16 3 Very small-sized pac

Ordering number EN3485 NPN Epitaxial Planar Silicon Transistor 2SC4694 Low-Frequency General-Purpose Amplifier, Muting Applications Features Package Dimensions Adoption of MBIT process. unit mm High DC current gain. 2059B High VEBO (VEBO 25V). [2SC4694] High reverse hFE (150 typ). 0.3 Small ON resistance [Ron=1 (IB=5mA)]. 0.15 3 Very small-sized pac

Ordering number EN3147 NPN Triple Diffused Planar Silicon Transistor 2SC4601 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4601] cesses for 2SC4601-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC

Ordering number ENN3702B 2SC4633LS NPN Triple Diffused Planar Silicon Transistor 2SC4633LS 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1200V). unit mm Small Cob(typical Cob=2.0pF). 2079D Full-isolation package. [2SC4633LS] High reliability(Adoption of HVP process). 10.0 4.

Ordering number EN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons Package Dimensions Color TV sound output, converter, inverter. unit mm 2064 Features [2SA1768/2SC4612] Adoption of MBIT process. High breakdown voltage, large current capacity. Fast switching speed. E Emitter C Collector B Base

Ordering number EN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage VCEO 200V. unit mm Small reverse transfer capacitance and excellent high 2064 frequency characteristic [2SA1787/2SC4650] Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET processes

Ordering number EN3644 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1777/2SC4623 Very High-Definition CRT Display Video Output Applications Features Package Dimensions High fT fT=400MHz (typ). unit mm High breakdown voltage VCEO 250V(min). 2042B High current. [2SA1777/2SC4623] Small reverse transfer capacitance and excellent high-frequnecy characteristic

Ordering number EN3148 NPN Triple Diffused Planar Silicon Transistor 2SC4602 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4602] cesses for 2SC4602-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC

Ordering number EN3520 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions Adoption of MBIT process. unit mm High breakdown voltage (VCEO 400V). 2064 Excellent linearity of hFE. [2SA17814/2SC4644] E Emitter C Collector B Base ( ) 2SA1784 SANYO N

Ordering number EN3701A NPN Triple Diffused Planar Silicon Transistor 2SC4632 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1200V). unit mm Small Cob (typical Cob=1.6pF). 2079B Full-isolation package. [2SC4632] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0

Ordering number EN3483 NPN Epitaxial Planar Silicon Darlington Transistor 2SC4671 Various Drivers Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2064 [2SC4671] 2.5 1.45 Features 6.9 1.0 High DC current gain. Wide ASO. On-chip Zener diode of 60 10V between colle

Ordering number EN3512B 2SA1786 PNP Epitaxial Planar Silicon Transistor 2SC4646 NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions Large current capacity (IC=2A). unit mm High breakdown voltage (VCEO 400V). 2064 [2SA1786/2SC4646] E Emitter C Collector B Base ( ) 2SA1786 SANYO NMP Spe

Ordering number EN3511A 2SA1785 PNP Epitaxial Planar Silicon Transistor 2SC4645 NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Features Package Dimensions Large current capacity (IC=1A). unit mm High breakdown voltage (VCEO 400V). 2064 [2SA1785/2SC4645] E Emitter C Collector B Base ( ) 2SA1785 SANYO NMP Spe

Ordering number ENN3699B 2SC4630LS NPN Triple Diffused Planar Silicon Transistor 2SC4630LS 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=900V). unit mm Small Cob(typical Cob=2.8pF). 2079D Full isolation package. [2SC4630LS] High reliability(Adoption of HVP process). 10.0 4.5

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM VMT3 (2) Emitter Absolute maximum ratings (Ta=25 C) (3) Collector

2SA1759 Transistors Transistors 2SC4505 / 2SC4620 (96-97-A324) (96-178-C300) 305

2SC4618H / 2SC4618 / 2SC4098 / 2SC2413 / 2SC2058S Transistors High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC4618H / 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S Features 1) Low collector capacitance. (Cob Typ. 1.3pF) External dimensions (Units mm) 2) Low rbb, high gain, and excellent noise characteristics. 2SC4618H 1.6 0.85 (1) (2) (3) Absolute maximum ratings (Ta=2

AEC-Q101 Qualified General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHA Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC2412KFRA 2SC4081FRA 2. Complements the 2SA1037AK / 2SA1576A / 2SA1037AKFRA / 2SA1576AFRA 2SA1774FRA / 2SA2029FHA 2SA1774H / 2SA2029

2SC4618 Datasheet Datasheet High-Frequency Amplifer Transistor (25V, 50mA, 300MHz) lOutline l SOT-416 Parameter Value SC-75A VCEO 25V IC 50mA EMT3 lFeatures lInner circuit l l 1)Low collector capacitance. (Cob Typ.1.3pF) lApplication l HIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTER RF AMPLIFIER, LOCAL OSCILLATOR lPackaging specifi

2SA1797 / 2SB1443 Transistors Transistors 2SC4672 (96-100-B208) (96-181-D208) 291

2SC4672 Transistors Low Frequency Transistor (50V, 3A) 2SC4672 Features 1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage

AEC-Q101 Qualified High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659FHA 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max.

2SC4672 Transistors Low Frequency Transistor (50V, 3A) 2SC4672 Features 1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN

2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081U3 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA

2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA17

2SC4672-P MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4672-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4672-R Fax (818) 701-4939 Features NPN Ideally Suited For Automatic Instertion Untral Small Surface Mount Package Plastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See order

MCC 2SC4617-Q TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SC4617-R Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4617-S Fax (818) 701-4939 Features Complement to 2SA1774-Q/R/S NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates General Purpose RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability r

2SC4672-P MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4672-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4672-R Fax (818) 701-4939 Features NPN Ideally Suited For Automatic Instertion Untral Small Surface Mount Package Plastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See order

MCC 2SC4617-Q TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SC4617-R Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4617-S Fax (818) 701-4939 Features Complement to 2SA1774-Q/R/S NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates General Purpose RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability r

MCC 2SC4617-Q TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SC4617-R Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4617-S Fax (818) 701-4939 Features Complement to 2SA1774-Q/R/S NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates General Purpose RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability r

2SC4672-P MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4672-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4672-R Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" NPN Ideally Suited For Automatic Instertion Untral Small Surface Mount Package Plastic-Encapsulate Lead Free Finish/R

2SC4617G, S2SC4617G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416 package http //onsemi.com which is designed for low power surface mount applications, where board space is at a premium. NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS Features SURFACE MOUNT Reduces

2SC4617G, S2SC4617G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416 package http //onsemi.com which is designed for low power surface mount applications, where board space is at a premium. NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS Features SURFACE MOUNT Reduces

2SC4617 NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416 package http //onsemi.com which is designed for low power surface mount applications, where board space is at a premium. NPN GENERAL PURPOSE Features AMPLIFIER TRANSISTORS Pb-Free Package is Available* SUR

ON Semiconductort 2SC4617 NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier NPN GENERAL applications. This device is housed in the SOT-416/SC 90 package PURPOSE AMPLIFIER which is designed for low power surface mount applications, where TRANSISTORS board space is at a premium. SURFACE MOUNT Reduces Board Space H

Ordering number EN3578A 2SA1770/2SC4614 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single NMP Features Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)180 V C

Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1791 1.6 0.15 0.4 0.8 0.1 0.4 Features Small collector output capacitance Cob. 1 SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 3 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.

Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1791 1.6 0.15 0.4 0.8 0.1 0.4 Features Small collector output capacitance Cob. 1 SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 3 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.

Transistor 2SC4606 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA1762 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. M type package allowing easy automatic and manual insertion as 0.85 well as stand-al

Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ 1 AM radios. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.2 0.1 Parameter

Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. (Flat type) +0.05 0.85 0.03 Absolute Maximum Rati

Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit

Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ 1 AM radios. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.2 0.1 Parameter

Transistor 2SC4606 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA1762 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. M type package allowing easy automatic and manual insertion as 0.85 well as stand-al

Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit

Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rati

Power Transistors 2SC4638 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maxi

Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rati

UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF (typ.) * Complements the UTC 2SA1774 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4617L-x-AB3-R 2SC4617G-x-AB3-R SOT-89 B C E Tape Reel 2SC4617L-x-AE3-R 2SC4617G-x-AE3-R SOT-23 B E C Tape Reel

UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR (50V,2A) DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. FEATURES *Low Saturation Voltage, Typically VCE(SAT)=0.1V at IC / IB=1A / 50mA *Excellent DC Current Gain Characteristics ORDERING INFORMATION Pin Assignment Order

UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF (typ) * Complements the UTC 2SA1774 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4617L-x-AB3-R 2SC4617G-x-AB3-R SOT-89 B C E Tape Reel 2SC4617L-x-AE3-R 2SC4617G-x-AE3-R SOT-23 E B C Tape Reel

FUJI POWER TRANSISTOR 2SC4603R TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators JEDEC (TO-3PF) High frewuency inverters EIAJ - General purpose power amplifiers Maximum ratings and characteristics Absolute maximum ratings (Tc=2

2SC4629 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4629 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 600 mW Junc

2SC4647 Silicon NPN Triple Diffused Application High voltage amplifier Features High break down voltage V(BR)CEO = 300 V min. Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4647 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5V Collector

2SC4628 Silicon NPN Planar Application High frequency amplifier Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4628 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 20 mA Collector power dissipation PC 200 mW Junction temp

2SC4680 Silicon NPN Epitaxial Application VHF / UHF high frequency switching Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4680 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8V Emitter t

2SC4692 Maximum Collector Dissipation Curve 60 40 20 0 50 100 150 Case Temperature TC ( C) Area of Safe Operation 20 (100 V, 20 A) f = 31.5 kHz Ta = 25 C 16 For picture tube arcing 12 8 (800 V, 5 A) 4 0.5 mA 0 400 800 1,200 1,600 2,000 Collector to emitter Voltage VCE (V) Typical Output Characteristics 10 8 6 4 2 TC = 25 C IB = 0 0 2 4 6 8 10 Collector to emi

2SC4693 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Features High gain bandwidth product fT = 2.5 GHz Typ. Large collector power dissipation PC = 900 mW Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4693 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VC

2SC4643 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4643 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissip

2SC460, 2SC461 Silicon NPN Epitaxial Planar Application 2SC460 high frequency amplifier, mixer 2SC461 VHF amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC460, 2SC461 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC460 2SC461 Unit Collector to base voltage VCBO 30 30 V Collector to emitter voltage VCEO 30 30 V Emitter to base voltage VE

2SC4618 0.05A , 40V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES High Voltage and Current. High DC Current Gain. A Complementary to 2SC4738. M 3 3 Top View C B Application 1 1 2 General Purpose Amplification. L 2 K E D CLASSIFICATION OF hFE H

2SC4617 0.15A , 60V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES Low Cob. Cob=2.0pF Complement of 2SA1774 A M 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 L 2 K Product-Rank 2SC4617-Q 2SC4617-R 2SC4617-S E Range 120 270 180 390 270 560 D H J F G M

2SC4672 500 mW, 60 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 A suffix of -C specifies halogen & lead-free FEATURES 4 Low saturation voltage, typically VCE(SAT)=0.1V at IC/IB=1A/50mA. Excellent DC current gain characteristics. 1 2 3 A Complements the 2SA1797 E C B D Collector F G H K J L

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 2SC4617 TRANSISTOR (NPN) FEATURES Low Cob Cob=2.0pF(Typ) 1. BASE Complement to 2SA1774 2. EMTTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Vol

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4672 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Saturation Voltage Excellent hFE Characteristics 3. EMITTER Complements the 2SA1797 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Co

JMnic Product Specification Silicon NPN Power Transistors 2SC4690 DESCRIPTION With TO-3PFM package Complementary to 2SA1805 Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute maximum ratings(Ta

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4689 DESCRIPTION With TO-3PFM package Complementary to 2SA1804 Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=

JMnic Product Specification Silicon NPN Power Transistors 2SC4687 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute ma

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4688 DESCRIPTION With TO-3PFM package Complement to type 2SA1803 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Maximum absolu

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4663 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4664 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-

2SC4662 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4662 Unit Symbol Conditions 2SC4662 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 V ICBO VCB=500V 100max A

2SC4672 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Saturation Voltage Excellent hFE Characteristics 3. EMITTER Complements the 2SA1797 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current 2 A PC Coll

2SC4617 SOT-523 Transistor(NPN) SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features Low Cob Cob=2.0pF(Typ) Complement to 2SA1774 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Con

2SC4672 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 4.6 1 B 4.4 1.6 1.8 1.4 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 0.40 0.48 Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 0.44 2x) 0.13 B 0.35 0.37 1.5 Excellent DC current gain characteristics. 3.0 Complements the 2SA1797. Dimensions in inches

2SC4618 NPN TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES Power dissipation PCM SOT-523(SC-75) Collector current ICM 0.05 A Collector-base voltage V(BR)CBO 40 V Operating and storage junction temperature range TJ, Tstg C ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) TYP MAX UNIT Parameter Symbol MIN Collector-base breakdown voltage IC =50 A,

2SC4617 NPN 3 3 1 2 SC-89 (SOT-523F) WEITRON http //www.weitron.com.tw 2SC4617 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain - - hFE 120 560 (IC=1 mAdc, VCE=6.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc - 0.5 (IC=50 mAdc, IB=5mAdc) Output Capacitance

2SC4672 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features SOT-89 * Low saturation voltage, typically VCE(sat) =0.35V at IC/IB=1A/50mA. * Excellent DC current gain characteristics. Mechanical Data * Case Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25 C Unless Otherwise Noted) Rating Symbol Value Unit VCBO 60 V Collector to B

FM120-M WILLAS 2SC4672 THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features SOT-89 TRANSISTOR (NPN) esign, excellent power dissipation offers Batch process d better reverse leakage current and thermal resistance. SOD-123H FEATURES Low profile surface

2SC4672U-H4031 NPN Silicon Epitaxial Planar Transistor Low Frequency Transistor Absolute Maximum Ratings (T = 25 ) a Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 50 V CEO Emitter Base Voltage V 6 V EBO Collector Current - DC I 3 C A Collector Current - Pulse 1) I 6 CP 0.5 P Total Power Dissipation tot W 2 2) Jun

ST 2SC4672U NPN Silicon Epitaxial Planar Transistor Low Frequency Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 6 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. L2SC4617QT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC4617QT1G ORDERING INFORMATION Series Device Marking Shipping L2SC4617QT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site L2SC4617QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering information S-L2SC4617QT1G Series Device Marking Shipping L2SC4617QT1G BQ

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site L2SC4617QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering information S-L2SC4617QT1G Series Device Marking Shipping L2SC4617QT1G BQ

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site L2SC4617QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering information S-L2SC4617QT1G Series Device Marking Shipping L2SC4617QT1G BQ

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4617QT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC4617QT1G ORDERING INFORMATION Series Device Marking Shipping L2SC4617QT1G B

SMD Type SMD Type SMD Type SMD Type SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors Product specification 2SC4615 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Large current calcity (IC=1A) High blocking voltage(VCEO 400V) 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0

SMD Type Transistors NPN Transistors 2SC4680 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect

SMD Type Transistors NPN Transistors 2SC4618 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 High Voltage and Current High DC Current Gain 3 Small Package 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 4

SMD Type Transistors NPN Transistors 2SC4695 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

SMD Type Transistors NPN Transistors 2SC4617 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 2 1 Features Collector Current Capability IC=0.15A Collector Emitter Voltage VCEO=50V 3 Low Cob Cob=2.0pF(Typ) 0.3 0.05 Complement to 2SA1774 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25

SMD Type Transistors NPN Transistors 2SC4672 Features 1.70 0.1 Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. Excellent DC current gain characteristics. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6

SMD Type Transistors Silicon NPN Triple Diffused Type Transistor 2SC4616 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Large current calcity (IC=2A) High blocking voltage(VCEO 400V) 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Colle

SMD Type Transistors NPN Transistors 2SC4643 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=9V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 9 V Emitter - Base Voltage VEBO

Bruckewell Technology Corp., Ltd. General Purpose Transistors NPN Silicon 2SC4617XT1G We declare that the material of product compliance with RoHS requirements MECHANICAL DATA * Case SOT-523 Molded plastic * Epoxy UL94V-O rate flame retardant SOT-523 Absolute maximum ratings (Ta=25 C) Device marking Bruckewell Technology Corp., Ltd. Electrical characteristics (T

CHENMKO ENTERPRISE CO.,LTD 2SC4617GP SURFACE MOUNT General Purpose NPN Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Power Amplifier . FEATURE SC-75/SOT-416 * Surface mount package. (SC-75/SOT-416) * Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 150mW (Collector power dissipation). (2) (3) 1.5 1.7 CONSTRUCTION 0.5

2SC4672 NPN Transistors Features Low Saturation Voltage Excellent hFE Characteristics Complementary to 2SA1797 3 2 1 1.Base 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Cur

2SC4617 NPN general purpose Transistor FEATURES Pb Reduces board space. Lead-free High hFE,210-460(typical). Low VCE(sat),

2SC4672 NPN Transistors 3 Features 2 Low Saturation Voltage 1 1.Base Excellent hFE Characteristics 2.Collector Complementary to 2SA1797 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Cur

2SC4672 NPN-Silicon General use Transistors 4 1W 1.5A 25V 1 2 3 Applications Can be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-base voltage IC=0 IC 1.5 A Collector

TAK CHEONG SEMICONDUCTOR 150mW SOT-523 SURFACE MOUNT Green Product Plastic Package NPN Silicon General Purpose Transistor 3 Absolute Maximum Ratings TA = 25 C unless otherwise noted 2 Symbol Parameter Value Units PC Collector Power Dissipation 150 mW 1 TSTG Storage Temperature Range -55 to +150 C TJ Operating Junction Temperature +150 C SOT-523 VCBO Collecto

2SC4617 2SC4617 2SC4617 2SC4617 TRANSISTOR(NPN) 2SC4617 SOT 523 FEATURES Low Cob Cob=2.0pF(Typ) Complement to 2SA1774 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150

2SC4617 2SC4617 SOT-523 Silicon General Purpose Transistor (NPN) General description SOT-523 Silicon General Purpose Transistor (NPN) FEATURES Low Cob = 2.0pF (Typical) Low Vce(sat)

SOT-523 Plastic-Encapsulate Transistors SOT-523 2SC4617 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Low Cob Cob=2.0pF(Typ) Complement to 2SA1774 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuo

Plastic-Encapsulate Transistors FEATURES 2SC4672 (NPN) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. Excellent DC current gain characteristics. Complements the 2SA1797. Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V 1. BASE Collector-Emitter Voltage VCEO 50 V 2. COLLECTO SOT-89 Emitter-

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4690 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 7A CE(sat) C Complement to Type 2SA1805 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4689 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 6A CE(sat) C Complement to Type 2SA1804 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4687 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 5A CE(sat) C Complement to Type 2SA1803 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier ap

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4663 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-bas

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4603R DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min.) (BR)CEO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4622 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators Solid st

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4664 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-bas

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4652 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and genera