2SC46 Datasheet, Equivalent, Cross Reference Search

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2SC4617/DPreliminary Information 2SC4617NPN Silicon General PurposeAmplifier TransistorNPN GENERALThis NPN transistor is designed for general purpose amplifier applications.PURPOSE AMPLIFIERThis device is housed in the SOT-416/SC90 package which is designed forTRANSISTORSlow power surface mount applications, wh

2SC4690 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications Unit: mm High breakdown voltage: V = 140 V (min) CEO Complementary to 2SA1805 Suitable for use in 70-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter v

2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain : h = 800 to 3200 (V = 2 V, I = 0.5 A) FE (1) CE C: h = 250 (V = 2 V, I = 4 A) FE (2) CE C Low collector saturation voltage : V = 0.5 V (max) (I = 4 A, I = 40 mA) CE (sat) C B High power dissipation : P

2SC4667 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4667 Ultra High Speed Switching Applications Unit: mm Computer, Counter Applications High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: V = 0.3 V (max) CE (sat) High speed switching time: t = 15 ns (typ.) stgMaximum Ratings (Ta == 25C) ==Characteristics Symbol R

2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 200 to 600 (V = 2 V, I = 0.5 A) FE (1) CE C: h = 140 (min), 200 (typ.) (V = 2 V, I = 3 A) FE (2) CE C Low collector saturation voltage : V = 0.5 V (max) (I = 3 A, I = 60 mA) CE (sat) C B Compleme

2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications Unit: mmHigh-Voltage Switching Applications High-Voltage Amplifier Applications High voltage: VCEO = 1200 V (max) Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V) Maximum Ratings (Tc = 25C) Characteristics Symbol Rating U

2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Unit: mm Switching Applications High hFE: h = 600~3600 FE High voltage: V = 50 V CEO High collector current: I = 150 mA (max) C Small package Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage V

Ordering number:EN4692NPN Epitaxial Planar Silicon Transistor2SC4660High-Definition CRT DisplayVideo Output Driver ApplicationsFeatures Package Dimensions High fT (fT=2.2GHz typ)unit:mm Large current (IC=300mA)2042B Adoption of FBET process.[2SC4660]8.04.03.31.0 1.03.01.60.80.80.75 0.71 : Emitter2 : Collector3 : Base2.44.8SANYO : TO-1

Ordering number:EN3699ANPN Triple Diffused Planar Silicon Transistor2SC4630900V/100mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Cob (typical Cob=2.8pF).2079B Full isolation package.[2SC4630] High reliability (Adoption of HVP process).4.510.02.83.20.90.

Ordering number:EN3705ANPN Triple Diffused Planar Silicon Transistor2SC46361800V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=1800V).unit:mm Small Cob (typical Cob=1.4pF).2079B Full-isolation package.[2SC4636] High reliability (Adoption of HVP process).4.510.02.83.20.90

Ordering number:EN3706ANPN Triple Diffused Planar Silicon Transistor2SC46371800V/15mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=1800V).unit:mm Small Cob (typical Cob=1.8pF).2079B Full-isolation package.[2SC4637] High reliability (Adoption of HVP process).4.510.02.83.20.90

Ordering number:EN3578PNP/NPN Epitaxial Planar Silicon Transistors2SA1770/2SC4614High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High breakdown voltage and large current capacity.2064[2SA1770/2SC4614]E : EmitterC : CollectorB : Base( ) : 2SA1770SANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CP

Ordering number:EN3704ANPN Triple Diffused Planar Silicon Transistor2SC46351500V/20mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=1500V).unit:mm Small Cob (typical Cob=1.9pF).2079B Full-isolation package.[2SC4635] High reliability (Adoption of HVP process).4.510.02.83.20.90

Ordering number : ENN3705B2SC4636LSNPN Triple Diffused Planar Silicon Transistor2SC4636LS1800V / 10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=1800V).unit : mm Small Cob(typical Cob=1.4pF).2079D Full-isolation package.[2SC4636LS] High reliability(Adoption of HVP process).10.0 4.

Ordering number:EN3708NPN Epitaxial Planar Silicon Transistor2SC467520V/8A Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm Low saturation voltage.2042B Fast switching speed.[2SC4675] Large current capacity.8.04.03.31.0 1.03.01.60.80.80.75 0.71 : Emitter2 : Collector3 : Base2.44.8SANYO : TO-126ML

Ordering number:EN3146NPN Triple Diffused Planar Silicon Transistor2SC4600Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4600]cesses for 2SC4600-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

Ordering number : ENN3704B2SC4635LSNPN Triple Diffused Planar Silicon Transistor2SC4635LS1500V / 20mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=1500V).unit : mm Small Cob(typical Cob=1.9pF).2079D Full-isolation package.[2SC4635LS] High reliability(Adoption of HVP process).10.0 4.

Ordering number:EN3398A2SA1772 : PNP Epitaxial Planar Silicon Transistor2SC4615 : NPN Triple Diffused Planar Silicon Transistor2SA1772/2SC4615High-Voltage Driver ApplicationsFeatures Package Dimensions Large current capacity (IC=1A).unit:mm High breakdown votlage (VCEO 400V).2045B[2SA1772/2SC4615]1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPuni

Ordering number:EN3700ANPN Triple Diffused Planar Silicon Transistor2SC4631900V/300mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Cob (typical Cob=5.0pF).2079B Full-isolation package.[2SC4631] High reliability (Adoption of HVP process).4.510.02.83.20.90.

Ordering number : ENN3700B2SC4631LSNPN Triple Diffused Planar Silicon Transistor2SC4631LS900V / 300mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=900V).unit : mm Small Cob(typical Cob=5.0pF).2079D Full-isolation package.[2SC4631LS] High reliability(Adoption of HVP process).10.0 4.5

Ordering number:ENN3578PNP/NPN Epitaxial Planar Silicon Transistors2SA1770/2SC4614High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High breakdown voltage and large current capacity.2064A[2SA1770/2SC4614]2.51.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector( ) : 2SA17703 : Base2.54 2.54Specificat

Ordering number:EN3580ANPN Epitaxial Planar Silicon Darlington Transistor2SC4696Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers. unit:mm2064AFeatures [2SC4696]2.51.45 Darlington connection.6.9 1.0 On-chip Zener diode of 90 10V between collectorand base. High DC current gain. High inductive load handling capa

Ordering number:EN3927NPN Epitaxial Planar Silicon Transistor2SC4673UHF Low-Noise Amplifier,Wide-Band Amplifier ApplicationsFeatures Package Dimensions Low noise figure : NF=1.5dB typ (f=0.9GHz).unit:mm2 High power gain : S21e =8.0dB typ (f=0.9GHz).2038A High cutoff frequency : fT=4.5GHz typ.[2SC4673]4.51.51.60.4 0.53 2 10.41.53.01 : Base

Ordering number : ENN3703B2SC4634LSNPN Triple Diffused Planar Silicon Transistor2SC4634LS1500V / 10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=1500V).unit : mm Small Cob(typical Cob=1.5pF).2079D Full-isolation package.[2SC4634LS] High reliability(Adoption of HVP process).10.0 4.

Ordering number : ENN3701B2SC4632LSNPN Triple Diffused Planar Silicon Transistor2SC4632LS1200V / 10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=1200V).unit : mm Small Cob(typical Cob=1.6pF).2079D Full-isolation package.[2SC4632LS] High reliability(Adoption of HVP process).10.0 4.

Ordering number:EN3703ANPN Triple Diffused Planar Silicon Transistor2SC46341500V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=1500V).unit:mm Small Cob (typical Cob=1.5pF).2079B Full-isolation package.[2SC4634] High reliability (Adoption of HVP process).4.510.02.83.20.90

Ordering number:EN3702ANPN Triple Diffused Planar Silicon Transistor2SC46331200V/30mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=1200V).unit:mm Small Cob (typical Cob=2.0pF).2079B Full-isolation package.[2SC4633] High reliability (Adoption of HVP process).4.510.02.83.20.90

Ordering number : ENN3706B2SC4637LSNPN Triple Diffused Planar Silicon Transistor2SC4637LS1800V / 15mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=1800V).unit : mm Small Cob(typical Cob=1.8pF).2079D Full-isolation package.[2SC4637LS] High reliability(Adoption of HVP process).10.0 4.

Ordering number:EN3486NPN Epitaxial Planar Silicon Transistor2SC4695Low-Frequency General-Purpose Amplifier,Muting ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High DC current gain.2018B High VEBO (VEBO 25V).[2SC4695] High reverse hFE (150 typ). Small ON resistance [Ron=1 (IB=5mA)]. 0.40.163 Very small-sized pac

Ordering number:EN3485NPN Epitaxial Planar Silicon Transistor2SC4694Low-Frequency General-Purpose Amplifier,Muting ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High DC current gain.2059B High VEBO (VEBO 25V).[2SC4694] High reverse hFE (150 typ).0.3 Small ON resistance [Ron=1 (IB=5mA)]. 0.153 Very small-sized pac

Ordering number:EN3147NPN Triple Diffused Planar Silicon Transistor2SC4601Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4601]cesses for 2SC4601-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

Ordering number : ENN3702B2SC4633LSNPN Triple Diffused Planar Silicon Transistor2SC4633LS1200V / 30mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=1200V).unit : mm Small Cob(typical Cob=2.0pF).2079D Full-isolation package.[2SC4633LS] High reliability(Adoption of HVP process).10.0 4.

Ordering number:EN3582PNP/NPN Epitaxial Planar Silicon Transistors2SA1768/2SC4612High-Voltage Switching ApplicationsApplicaitons Package Dimensions Color TV sound output, converter, inverter. unit:mm2064Features [2SA1768/2SC4612] Adoption of MBIT process. High breakdown voltage, large current capacity. Fast switching speed.E : EmitterC : CollectorB : Base

Ordering number:EN3581PNP/NPN Epitaxial Planar Silicon Transistors2SA1787/2SC4650High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent high2064frequency characteristic:[2SA1787/2SC4650]Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET processes

Ordering number:EN3644PNP/NPN Epitaxial Planar Silicon Transistors2SA1777/2SC4623Very High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz (typ).unit:mm High breakdown voltage : VCEO 250V(min).2042B High current.[2SA1777/2SC4623] Small reverse transfer capacitance and excellenthigh-frequnecy characteristic :

Ordering number:EN3148NPN Triple Diffused Planar Silicon Transistor2SC4602Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4602]cesses for 2SC4602-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

Ordering number:EN3520PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA1784/2SC4644High Voltage Driver ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High breakdown voltage (VCEO 400V).2064 Excellent linearity of hFE.[2SA17814/2SC4644]E : EmitterC : CollectorB : Base( ) : 2SA1784SANYO : N

Ordering number:EN3701ANPN Triple Diffused Planar Silicon Transistor2SC46321200V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=1200V).unit:mm Small Cob (typical Cob=1.6pF).2079B Full-isolation package.[2SC4632] High reliability (Adoption of HVP process).4.510.02.83.20.90

Ordering number:EN3483NPN Epitaxial Planar Silicon Darlington Transistor2SC4671Various Drivers ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2064[2SC4671]2.51.45Features6.9 1.0 High DC current gain. Wide ASO. On-chip Zener diode of 60 10V between colle

Ordering number:EN3512B2SA1786 : PNP Epitaxial Planar Silicon Transistor2SC4646 : NPN Triple Diffused Planar Silicon Transistor2SA1786/2SC4646High Voltage Driver ApplicationsFeatures Package Dimensions Large current capacity (IC=2A).unit:mm High breakdown voltage (VCEO 400V).2064[2SA1786/2SC4646]E : EmitterC : CollectorB : Base( ) : 2SA1786SANYO : NMPSpe

Ordering number:EN3511A2SA1785 : PNP Epitaxial Planar Silicon Transistor2SC4645 : NPN Triple Diffused Planar Silicon Transistor2SA1785/2SC4645High Voltage Driver ApplicationsFeatures Package Dimensions Large current capacity (IC=1A).unit:mm High breakdown voltage (VCEO 400V).2064[2SA1785/2SC4645]E : EmitterC : CollectorB : Base( ) : 2SA1785SANYO : NMPSpe

Ordering number : ENN3699B2SC4630LSNPN Triple Diffused Planar Silicon Transistor2SC4630LS900V / 100mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=900V).unit : mm Small Cob(typical Cob=2.8pF).2079D Full isolation package.[2SC4630LS] High reliability(Adoption of HVP process).10.0 4.5

General purpose small signal amplifier (50V, 0.15A) 2SC4617EB Features Dimensions (Unit : mm) 1) Excellent hFE linearity. EMT3F2) Complements the 2SA1774EB. 1.6 0.7Structure 0.26NPN silicon epitaxial (3)planar transistor (1) (2)0.130.5 0.51.0Each lead has same dimensions(1) Base(2) Emitter (3) Collector Abbreviated symbol : B = Denotes hFE

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.ROHM : VMT3(2) EmitterAbsolute maximum ratings (Ta=25C) (3) Collector

2SA1759TransistorsTransistors2SC4505 / 2SC4620(96-97-A324)(96-178-C300)305

2SC4618H / 2SC4618 / 2SC4098 / 2SC2413 / 2SC2058STransistorsHigh-frequency Amplifier Transistor(25V, 50mA, 300MHz)2SC4618H / 2SC4618 / 2SC4098 / 2SC2413K /2SC2058S Features1) Low collector capacitance. (Cob : Typ. 1.3pF) External dimensions (Units : mm)2) Low rbb, high gain, and excellent noise characteristics.2SC4618H1.60.85(1)(2)(3) Absolute maximum ratings (Ta=2

AEC-Q101 QualifiedGeneral purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHAFeatures Dimensions (Unit : mm)1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)2SC2412K 2SC40812SC2412KFRA 2SC4081FRA2. Complements the 2SA1037AK / 2SA1576A /2SA1037AKFRA / 2SA1576AFRA2SA1774FRA / 2SA2029FHA 2SA1774H / 2SA2029

2SC4618DatasheetDatasheetHigh-Frequency Amplifer Transistor (25V, 50mA, 300MHz)lOutlinel SOT-416 Parameter Value SC-75A VCEO25VIC50mAEMT3lFeatures lInner circuitl l1)Low collector capacitance. (Cob:Typ.1.3pF)lApplicationlHIGH FREQUENCY AMPLIFIER, FREQUENCY CONVERTERRF AMPLIFIER, LOCAL OSCILLATORlPackaging specifi

2SA1797 / 2SB1443TransistorsTransistors2SC4672(96-100-B208)(96-181-D208)291

2SC4672 Transistors Low Frequency Transistor (50V, 3A) 2SC4672 Features 1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage

AEC-Q101 QualifiedHigh-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413KFeatures Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC5659FHA2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.

2SC4672 Transistors Low Frequency Transistor (50V, 3A) 2SC4672 Features 1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC46172. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1)(2)(3)1.251.6 0.82.12.81.6Structure Epitaxial planar type 0.1Min. 0.1Min.0.3Min.NPN

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081U3 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA17

2SC4672-PMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4672-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4672-RFax: (818) 701-4939FeaturesNPN Ideally Suited For Automatic Instertion Untral Small Surface Mount PackagePlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See order

MCC2SC4617-QTM Micro Commercial Components20736 Marilla Street Chatsworth2SC4617-RMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4617-SFax: (818) 701-4939Features Complement to 2SA1774-Q/R/S NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates General Purpose RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability r

2SC4672-PMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4672-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4672-RFax: (818) 701-4939FeaturesNPN Ideally Suited For Automatic Instertion Untral Small Surface Mount PackagePlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See order

MCC2SC4617-QTM Micro Commercial Components20736 Marilla Street Chatsworth2SC4617-RMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4617-SFax: (818) 701-4939Features Complement to 2SA1774-Q/R/S NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates General Purpose RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability r

MCC2SC4617-QTM Micro Commercial Components20736 Marilla Street Chatsworth2SC4617-RMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4617-SFax: (818) 701-4939Features Complement to 2SA1774-Q/R/S NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates General Purpose RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability r

2SC4672-PMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4672-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4672-RFax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"NPN Ideally Suited For Automatic Instertion Untral Small Surface Mount PackagePlastic-Encapsulate Lead Free Finish/R

2SC4617G, S2SC4617GNPN Silicon GeneralPurpose AmplifierTransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416 package http://onsemi.comwhich is designed for low power surface mount applications, whereboard space is at a premium.NPN GENERAL PURPOSEAMPLIFIER TRANSISTORSFeaturesSURFACE MOUNT Reduces

2SC4617G, S2SC4617GNPN Silicon GeneralPurpose AmplifierTransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416 package http://onsemi.comwhich is designed for low power surface mount applications, whereboard space is at a premium.NPN GENERAL PURPOSEAMPLIFIER TRANSISTORSFeaturesSURFACE MOUNT Reduces

2SC4617NPN Silicon GeneralPurpose AmplifierTransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416 package http://onsemi.comwhich is designed for low power surface mount applications, whereboard space is at a premium.NPN GENERAL PURPOSEFeaturesAMPLIFIER TRANSISTORS Pb-Free Package is Available*SUR

ON Semiconductort2SC4617NPN Silicon General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierNPN GENERALapplications. This device is housed in the SOT-416/SC90 packagePURPOSE AMPLIFIERwhich is designed for low power surface mount applications, whereTRANSISTORSboard space is at a premium.SURFACE MOUNT Reduces Board Space H

Ordering number : EN3578A2SA1770/2SC4614Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single NMPFeatures Adoption of MBIT process High breakdown voltage and large current capacity( )2SA1770SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO (--)180 VC

Transistor2SC4626Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17901.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification of FM/AM radios.1High transition frequency fT.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25

Transistor2SC4656Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17911.6 0.150.4 0.8 0.1 0.4FeaturesSmall collector output capacitance Cob.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.32Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit 0.

Transistor2SC4656Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17911.6 0.150.4 0.8 0.1 0.4FeaturesSmall collector output capacitance Cob.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.32Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit 0.

Transistor2SC4606Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA17626.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.M type package allowing easy automatic and manual insertion as0.85well as stand-al

Transistor2SC4655Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/1AM radios.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)0.2 0.1Parameter

Transistor2SC4627JSilicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.60 0.050.80 0.80 0.050.425 0.425FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing. (Flat type)+0.050.850.03Absolute Maximum Rati

Transistor2SC4691Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit

Transistor2SC4655Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/1AM radios.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)0.2 0.1Parameter

Transistor2SC4606Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA17626.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.M type package allowing easy automatic and manual insertion as0.85well as stand-al

Transistor2SC4691Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit

Transistor2SC4626Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17901.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification of FM/AM radios.1High transition frequency fT.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25

Transistor2SC4627Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification of FM/AM radios.1High transition frequency fT.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rati

Power Transistors2SC4638Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBOLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Full-pack package which can be installed to the heat sink withone screwAbsolute Maxi

Transistor2SC4627Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesOptimum for RF amplification of FM/AM radios.1High transition frequency fT.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rati

UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF (typ.) * Complements the UTC 2SA1774 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SC4617L-x-AB3-R 2SC4617G-x-AB3-R SOT-89 B C E Tape Reel2SC4617L-x-AE3-R 2SC4617G-x-AE3-R SOT-23 B E C Tape Reel

UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR (50V,2A) DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. FEATURES *Low Saturation Voltage, Typically VCE(SAT)=0.1V at IC / IB=1A / 50mA *Excellent DC Current Gain Characteristics ORDERING INFORMATION Pin Assignment Order

UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF (typ) * Complements the UTC 2SA1774 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4617L-x-AB3-R 2SC4617G-x-AB3-R SOT-89 B C E Tape Reel2SC4617L-x-AE3-R 2SC4617G-x-AE3-R SOT-23 E B C Tape Reel

FUJI POWER TRANSISTOR2SC4603RTRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFFeaturesHigh voltage,High speed switchingHigh reliabilityApplicationsSwitching regulatorsUltrasonic generatorsJEDEC (TO-3PF)High frewuency inverters EIAJ -General purpose power amplifiersMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2

2SC4629Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC4629Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissipation PC 600 mWJunc

2SC4647Silicon NPN Triple DiffusedApplicationHigh voltage amplifierFeatures High break down voltageV(BR)CEO = 300 V min.OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC4647Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 5VCollector

2SC4628Silicon NPN PlanarApplicationHigh frequency amplifierOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC4628Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 20 mACollector power dissipation PC 200 mWJunction temp

2SC4680Silicon NPN EpitaxialApplicationVHF / UHF high frequency switchingFeatures Low Ron and high performance for RF switch. Capable of high density mounting.OutlineMPAK311. Emitter2. Base23. Collector2SC4680Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 12 VCollector to emitter voltage VCEO 8VEmitter t

2SC4692Maximum Collector Dissipation Curve6040200 50 100 150Case Temperature TC (C)Area of Safe Operation20(100 V, 20 A)f = 31.5 kHz Ta = 25C16For picture tube arcing128(800 V, 5 A)40.5 mA0 400 800 1,200 1,600 2,000Collector to emitter Voltage VCE (V)Typical Output Characteristics108642TC = 25CIB = 00 2 4 6 8 10Collector to emi

2SC4693Silicon NPN Epitaxial PlanarApplicationVHF Wide band amplifierFeatures High gain bandwidth productfT = 2.5 GHz Typ. Large collector power dissipationPC = 900 mWOutlineTO-92MOD1. Emitter2. Collector3. Base3212SC4693Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VC

2SC4643Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC4643Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissip

2SC460, 2SC461Silicon NPN Epitaxial PlanarApplication 2SC460 high frequency amplifier, mixer 2SC461 VHF amplifier, mixerOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC460, 2SC461Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC460 2SC461 UnitCollector to base voltage VCBO 30 30 VCollector to emitter voltage VCEO 30 30 VEmitter to base voltage VE

2SC4618 0.05A , 40V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES High Voltage and Current. High DC Current Gain. A Complementary to 2SC4738. M33Top View C BApplication 11 2 General Purpose Amplification. L 2KEDCLASSIFICATION OF hFE H

2SC4617 0.15A , 60V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES Low Cob. Cob=2.0pF Complement of 2SA1774 AM33Top View C BCLASSIFICATION OF hFE 11 2L 2KProduct-Rank 2SC4617-Q 2SC4617-R 2SC4617-S ERange 120~270 180~390 270~560 DH JF GM

2SC4672 500 mW, 60 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 A suffix of -C specifies halogen & lead-free FEATURES 4 Low saturation voltage, typically VCE(SAT)=0.1V at IC/IB=1A/50mA. Excellent DC current gain characteristics. 123A Complements the 2SA1797 ECB DCollectorF GH KJ L

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate TransistorsSOT-5232SC4617 TRANSISTOR (NPN)FEATURES Low Cob:Cob=2.0pF(Typ)1. BASE Complement to 2SA17742. EMTTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Vol

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4672 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Saturation Voltage Excellent hFE Characteristics 3. EMITTER Complements the 2SA1797 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Co

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4690 DESCRIPTION With TO-3PFM package Complementary to 2SA1805 Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute maximum ratings(Ta

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4689 DESCRIPTION With TO-3PFM package Complementary to 2SA1804 Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4687 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute ma

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4688 DESCRIPTION With TO-3PFM package Complement to type 2SA1803 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PFM) and symbol Maximum absolu

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4663 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 250 V VCEO Collector-

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4664 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 250 V VCEO Collector-

2SC4662Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4662 Unit Symbol Conditions 2SC4662 Unit0.24.20.210.1c0.52.8VCBO 500 V ICBO VCB=500V 100max A

2SC4672 SOT-89-3L TRANSISTOR (NPN)1. BASE FEATURES 2. COLLECTOR Low Saturation Voltage Excellent hFE Characteristics 3. EMITTER Complements the 2SA1797 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current 2 A PC Coll

2SC4617SOT-523 Transistor(NPN)SOT-5231. BASE 2. EMITTER 3. COLLECTOR Features Low Cob:Cob=2.0pF(Typ) Complement to 2SA1774 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Con

2SC4672 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 4.61 B4.41.61.81.41.42 3. EMITTER 3 2.64.252.43.75Features 0.8MIN0.530.400.48Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 0.44 2x)0.13 B0.35 0.371.5 Excellent DC current gain characteristics. 3.0Complements the 2SA1797. Dimensions in inches

2SC4618NPN TRANSISTOR3P b Lead(Pb)-Free12FEATURES:Power dissipation PCMSOT-523(SC-75)Collector current ICM: 0.05 ACollector-base voltage V(BR)CBO: 40 VOperating and storage junction temperature range TJ, Tstg CELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) TYP MAX UNITParameter Symbol MINCollector-base breakdown voltage IC =50 A,

2SC4617NPN3312SC-89(SOT-523F)WEITRONhttp://www.weitron.com.tw2SC4617ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Min Typ Max UnitON CHARACTERISTICSDC Current Gain--hFE 120560(IC=1 mAdc, VCE=6.0 Vdc)Collector-Emitter Saturation VoltageVCE(sat) - Vdc- 0.5 (IC=50 mAdc, IB=5mAdc)Output Capacitance

2SC4672NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123Features:SOT-89* Low saturation voltage, typically VCE(sat) =0.35V at IC/IB=1A/50mA.* Excellent DC current gain characteristics.Mechanical Data:* Case : Molded PlasticABSOLUTE MAXIMUM RATINGS(TA=25C Unless Otherwise Noted)Rating Symbol Value UnitVCBO60 VCollector to B

FM120-M WILLAS2SC4672 THRUSOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesSOT-89TRANSISTOR (NPN) esign, excellent power dissipation offers Batch process d better reverse leakage current and thermal resistance.SOD-123HFEATURES Low profile surface

2SC4672 Rev.J Jan.-2019 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,, 2SA1797 Low saturation voltage, excellent DC current gain characteristics, complements the 2SA1797. / Applications

2SC4672U-H4031 NPN Silicon Epitaxial Planar Transistor Low Frequency Transistor Absolute Maximum Ratings (T = 25) aParameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base Voltage V 6 V EBOCollector Current - DC I 3 CA Collector Current - Pulse 1) I 6 CP0.5 P Total Power Dissipation tot W 2 2) Jun

ST 2SC4672U NPN Silicon Epitaxial Planar Transistor Low Frequency Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 6 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 6 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements.L2SC4617QT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC4617QT1GORDERING INFORMATION SeriesDevice Marking ShippingL2SC4617QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteL2SC4617QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering informationS-L2SC4617QT1G SeriesDevice Marking ShippingL2SC4617QT1G BQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteL2SC4617QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering informationS-L2SC4617QT1G SeriesDevice Marking ShippingL2SC4617QT1G BQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteL2SC4617QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering informationS-L2SC4617QT1G SeriesDevice Marking ShippingL2SC4617QT1G BQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC4617QT1G We declare that the material of product compliance with RoHS requirements.Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC4617QT1GORDERING INFORMATION SeriesDevice Marking ShippingL2SC4617QT1GB

SMD TypeSMD TypeSMD TypeSMD TypeSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SC4615TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLarge current calcity (IC=1A)High blocking voltage(VCEO 400V)0.127+0.1 max0.80-0.1+0.12.3 0

SMD Type TransistorsNPN Transistors2SC4680SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect

SMD Type TransistorsNPN Transistors2SC4618SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 High Voltage and Current High DC Current Gain3 Small Package0.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 4

SMD Type TransistorsNPN Transistors2SC4695SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

SMD Type TransistorsNPN Transistors2SC4617SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features Collector Current Capability IC=0.15A Collector Emitter Voltage VCEO=50V3 Low Cob:Cob=2.0pF(Typ)0.30.05 Complement to 2SA1774+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25

SMD Type TransistorsNPN Transistors2SC4672Features1.70 0.1Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA.Excellent DC current gain characteristics.0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 6

SMD Type TransistorsSilicon NPN Triple Diffused Type Transistor2SC4616TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLarge current calcity (IC=2A)High blocking voltage(VCEO 400V)0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColle

SMD Type TransistorsNPN Transistors2SC4643SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=9V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 9 V Emitter - Base Voltage VEBO

Bruckewell Technology Corp., Ltd. General Purpose Transistors NPN Silicon 2SC4617XT1G We declare that the material of product compliance with RoHS requirements MECHANICAL DATA * Case: SOT-523 Molded plastic * Epoxy: UL94V-O rate flame retardant SOT-523 Absolute maximum ratings (Ta=25C) Device marking Bruckewell Technology Corp., Ltd. Electrical characteristics (T

CHENMKO ENTERPRISE CO.,LTD2SC4617GPSURFACE MOUNT General Purpose NPN Transistor VOLTAGE 50 Volts CURRENT 0.15 AmpereAPPLICATION* Small Power Amplifier .FEATURESC-75/SOT-416* Surface mount package. (SC-75/SOT-416)* Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.)* PC= 150mW (Collector power dissipation).(2)(3)1.5~1.7CONSTRUCTION0.5

2SC4672NPN Transistors Features Low Saturation Voltage Excellent hFE Characteristics Complementary to 2SA1797321 1.Base2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Cur

2SC4617 NPN general purpose TransistorFEATURES Pb Reduces board space. Lead-free High hFE,210-460(typical). Low VCE(sat),

2SC4672NPN Transistors3 Features2 Low Saturation Voltage1 1.Base Excellent hFE Characteristics2.Collector Complementary to 2SA17973.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Cur

2SC4672NPN-Silicon General use Transistors41W 1.5A25V 1 2 3ApplicationsCan be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 ACollector

TAK CHEONG SEMICONDUCTOR150mW SOT-523 SURFACE MOUNT Green Product Plastic Package NPN Silicon General Purpose Transistor 3 Absolute Maximum Ratings TA = 25C unless otherwise noted 2 Symbol Parameter Value UnitsPC Collector Power Dissipation 150 mW 1 TSTG Storage Temperature Range -55 to +150 C TJ Operating Junction Temperature +150 C SOT-523 VCBO Collecto

2SC46172SC46172SC46172SC4617TRANSISTOR(NPN)2SC4617SOT523FEATURES Low Cob:Cob=2.0pF(Typ) Complement to 2SA1774 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150

2SC4617 2SC4617 SOT-523 Silicon General Purpose Transistor (NPN) General description SOT-523 Silicon General Purpose Transistor (NPN) FEATURES Low Cob = 2.0pF (Typical) Low Vce(sat)

SOT-523 Plastic-Encapsulate TransistorsSOT-523 2SC4617 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Low Cob:Cob=2.0pF(Typ) Complement to 2SA1774 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuo

Plastic-Encapsulate TransistorsFEATURES2SC4672 (NPN) Low saturation voltage, typically VCE (sat) =0.1V atIC/IB =1A /50mA. Excellent DC current gain characteristics. Complements the 2SA1797.Maximum Ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 60 V1. BASECollector-Emitter Voltage VCEO 50 V2. COLLECTO SOT-89Emitter-

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4690DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 7ACE(sat) CComplement to Type 2SA1805100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4689DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 6ACE(sat) CComplement to Type 2SA1804100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4687DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 5ACE(sat) CComplement to Type 2SA1803100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier ap

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4663 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-bas

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4603RDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency inverters

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4622DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsSolid st

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4664 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-bas

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4662DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4652DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgenera