2SC4691 - Даташиты. Аналоги. Основные параметры

Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit

Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit

2SC4690 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications Unit mm High breakdown voltage V = 140 V (min) CEO Complementary to 2SA1805 Suitable for use in 70-W high fidelity audio amplifier s output stage Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter v

Ordering number EN3580A NPN Epitaxial Planar Silicon Darlington Transistor 2SC4696 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers. unit mm 2064A Features [2SC4696] 2.5 1.45 Darlington connection. 6.9 1.0 On-chip Zener diode of 90 10V between collector and base. High DC current gain. High inductive load handling capa

Ordering number EN3486 NPN Epitaxial Planar Silicon Transistor 2SC4695 Low-Frequency General-Purpose Amplifier, Muting Applications Features Package Dimensions Adoption of FBET process. unit mm High DC current gain. 2018B High VEBO (VEBO 25V). [2SC4695] High reverse hFE (150 typ). Small ON resistance [Ron=1 (IB=5mA)]. 0.4 0.16 3 Very small-sized pac

Ordering number EN3485 NPN Epitaxial Planar Silicon Transistor 2SC4694 Low-Frequency General-Purpose Amplifier, Muting Applications Features Package Dimensions Adoption of MBIT process. unit mm High DC current gain. 2059B High VEBO (VEBO 25V). [2SC4694] High reverse hFE (150 typ). 0.3 Small ON resistance [Ron=1 (IB=5mA)]. 0.15 3 Very small-sized pac

2SC4692 Maximum Collector Dissipation Curve 60 40 20 0 50 100 150 Case Temperature TC ( C) Area of Safe Operation 20 (100 V, 20 A) f = 31.5 kHz Ta = 25 C 16 For picture tube arcing 12 8 (800 V, 5 A) 4 0.5 mA 0 400 800 1,200 1,600 2,000 Collector to emitter Voltage VCE (V) Typical Output Characteristics 10 8 6 4 2 TC = 25 C IB = 0 0 2 4 6 8 10 Collector to emi

2SC4693 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Features High gain bandwidth product fT = 2.5 GHz Typ. Large collector power dissipation PC = 900 mW Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4693 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VC

JMnic Product Specification Silicon NPN Power Transistors 2SC4690 DESCRIPTION With TO-3PFM package Complementary to 2SA1805 Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute maximum ratings(Ta

SMD Type Transistors NPN Transistors 2SC4695 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4690 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 7A CE(sat) C Complement to Type 2SA1805 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier a