Биполярный транзистор 2SC4735E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4735E
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 20 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: U2
2SC4735E Datasheet (PDF)
2sc4735.pdf
Ordering number:EN3974NPN Epitaxial Planar Silicon Transistor2SC473527MHz CB Transceiver Driver ApplicationsFeatures Package Dimensions Large power type such as PC=1.5W when usedunit:mmwithout heatsink.2084B It is possible to make appliances more compact[2SC4735]because its height on board is 9.5mm.4.51.9 2.6 Effective in automatic inserting and counting sto
2sc4738ft.pdf
2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm High Voltage: VCEO = 50 V High Current: I = 150 mA (max) C High h : h = 120 to 400 FE FE Excellent h Linearity FE: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SA1832FT Maximum Rat
2sc4738.pdf
2SC4738 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 120~700 Complementary to 2SA1832 Small package Absolute Maximu
2sc4738f.pdf
2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 120~400 FE: FE Complementary to 2SA1832F Small package Maximu
2sc4737.pdf
Ordering number:ENN3880ANPN Epitaxial Planar Silicon Transistor2SC473750V/2A Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2084B[2SC4737]4.5Features1.9 2.610.51.2 1.4 High DC current gain. Wide ASO. On-chip Zener diode of 60 10V between colle
2sc4730.pdf
Ordering number:EN3878PNP/NPN Epitaxial Planar Silicon Transistors2SA1826/2SC4730100V/3A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2084[2SA1826/2SC4730]Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Exc
2sc4731.pdf
Ordering number:ENN3879APNP/NPN Epitaxial Planar Silicon Transistors2SA1827/2SC4731100V/4A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applicaions.2084B[2SA1827/2SC4731]4.5Features1.9 2.610.51.2 1.4 Low collector-to-emitter saturation voltage. High G
2sc4736.pdf
Ordering number:EN3975NPN Epitaxial Planar Silicon Transistor2SC4736High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Large current (IC=2A).unit:mm Adoption of MBIT process.2084B High DC current gain (hFE=800 to 3200).[2SC4736] Low collector-to-emitter saturation voltage4.51.9 2.6(VCE(sat) 0.5V). 10.51.2 1.4
2sc4734.pdf
Ordering number:EN44092SA1830 : PNPEpitaxial Planar Silicon Transistor2SC4734 ; NPN Triple Diffused Planar Silicon Transistor2SA1830/2SC4734High-Voltage Driver ApplicationsFeatures Package Dimensions Large current capacity (IC=2A).unit:mm High breakdown voltage (VCEO 400V).2084A Possible to offer the 2SA1830/2SC4734 devices in a[2SA1830/2SC4734]tape reel pack
2sc4738.pdf
2SC4738NPN TRANSISTOR3P b Lead(Pb)-Free12FEATURES:High voltage and high current SOT-523(SC-75)Excellent hFE linearity High hFEComplementary to 2SA1832 MAXIMUM RATINGS (TA=25C unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current Continuous IC
2sc4738.pdf
SMD Type TransistorsNPN Transistors2SC4738SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 High Voltage and Current High DC Current Gain Small Package3 Complementary to 2SA18320.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050