2SC4743 datasheet, аналоги, основные параметры
Наименование производителя: 2SC4743 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO3PFM
📄📄 Копировать
Аналоги (замена) для 2SC4743
- подборⓘ биполярного транзистора по параметрам
2SC4743 даташит
..1. Size:187K inchange semiconductor
2sc4743.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4743 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 )
8.1. Size:32K hitachi
2sc4747.pdf 
2SC4747 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature High breakdown voltage VCBO = 1500 V High speed switching tf 0.3 s Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4747 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter volta
8.3. Size:299K hitachi
2sc4745.pdf 
2SC4745 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output Feature TO-3PFM High speed switching tf = 0.2 s typ High breakdown voltage VCBO = 1500 V Isolated package; TO-3PFM Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit 1 2 3 1. Base 2. Collector Collector to b
8.4. Size:32K hitachi
2sc4742.pdf 
2SC4742 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature High breakdown voltage VCES = 1500 V Built-in damper diode type Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1 3 2 3 2SC4742 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 1500 V Emitter to
8.5. Size:90K jmnic
2sc4747.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4747 DESCRIPTION With TO-3PFM package High speed switching High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER
8.6. Size:107K jmnic
2sc4742.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4742 DESCRIPTION With TO-3PN package Built-in damper diode High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum rati
8.7. Size:188K inchange semiconductor
2sc4747.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4747 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 )
8.8. Size:221K inchange semiconductor
2sc4744.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4744 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE
8.9. Size:188K inchange semiconductor
2sc4745.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4745 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 )
8.10. Size:188K inchange semiconductor
2sc4746.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4746 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )
8.11. Size:186K inchange semiconductor
2sc4742.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4742 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CES Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25
Другие транзисторы: 2SC4735, 2SC4735D, 2SC4735E, 2SC4735F, 2SC4738, 2SC473H, 2SC474, 2SC4742, 13009, 2SC4744, 2SC4745, 2SC4746, 2SC4746A, 2SC4747, 2SC474H, 2SC475, 2SC4754
