Биполярный транзистор 2SC507R
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC507R
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.75
W
Макcимально допустимое напряжение коллектор-база (Ucb): 170
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 4
pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
TO39
Аналоги (замена) для 2SC507R
2SC507R
Datasheet (PDF)
8.4. Size:106K sanyo
2sc5070.pdf 
Ordering number:EN4473NPN Epitaxial Planar Silicon Transistor2SC5070Low-Frequency General-Purpose Amplifier,Driver ApplicationsFeatures Package Dimensions High current capacity.unit:mm Adoption of MBIT process.2084A High DC current gain.[2SC5070] Low collector-to-emitter saturation voltage.4.51.9 2.610.5 High VEBO.1.2 1.41.20.51.60.51 2
8.5. Size:84K panasonic
2sc5077.pdf 
Power Transistors2SC5077, 2SC5077ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation,
8.6. Size:45K hitachi
2sc5078.pdf 
2SC5078Silicon NPN EpitaxialADE-208-2211st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 12 GHz Typ High gain, low noise figurePG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC5078Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCo
8.7. Size:25K hitachi
2sc5079.pdf 
2SC5079Silicon NPN EpitaxialADE-208-2221st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 12 GHz Typ High gain, low noise figurePG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHzOutlineCMPAK42311. Collector42. Emitter3. Base4. Emitter2SC5079Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
8.8. Size:183K jmnic
2sc5071.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC5071 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=
8.9. Size:25K sanken-ele
2sc5071.pdf 
2SC5071Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol ConditionsSymbol 2SC5071 Unit 2SC5071 Unit0.24.80.415.6ICBO VCB=500VVCBO 500 V 100max A0.19.
8.10. Size:179K inchange semiconductor
2sc5071.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5071DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
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