2SC507R PDF and Equivalents Search

 

2SC507R Specs and Replacement

Type Designator: 2SC507R

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 170 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO39

 2SC507R Substitution

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2SC507R datasheet

 8.2. Size:220K  toshiba

2sc5076.pdf pdf_icon

2SC507R

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 8.3. Size:219K  toshiba

2sc5075.pdf pdf_icon

2SC507R

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 8.4. Size:106K  sanyo

2sc5070.pdf pdf_icon

2SC507R

Ordering number EN4473 NPN Epitaxial Planar Silicon Transistor 2SC5070 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit mm Adoption of MBIT process. 2084A High DC current gain. [2SC5070] Low collector-to-emitter saturation voltage. 4.5 1.9 2.6 10.5 High VEBO. 1.2 1.4 1.2 0.5 1.6 0.5 1 2... See More ⇒

Detailed specifications: 2SC505O, 2SC505R, 2SC506, 2SC5068A, 2SC506O, 2SC506R, 2SC507, 2SC507O, D882, 2SC507Y, 2SC508, 2SC509, 2SD1350A, 2SD1579K, 2SC509GTM, 2SC509O, 2SC509Y

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