Биполярный транзистор 2SC518 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC518
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 63 W
Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO3
2SC518 Datasheet (PDF)
2sc5184.pdf
DATA SHEETSILICON TRANSISTOR2SC5184NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLDPACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low Noise(Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.1 0.1 Super Mini-Mold package1.25 0.1 EIAJ: SC-70ORDERING INFORMAT
2sc5186.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5186NPN EPITAXIAL SILICON RF TRANSISTORFOR LOW-NOISE MICROWAVE AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Low noiseNF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHzNF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 3-pin ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5186 50 pcs (N
2sc5183.pdf
DATA SHEETSILICON TRANSISTOR2SC5183NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLDPACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low Noise PACKAGE DIMENSIONS (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.8+0.2 0.3 4-pin Mini-Mold package1.5+0.2 0.1EIAJ: SC-61ORDERING
2sc5185.pdf
DATA SHEETSILICON TRANSISTOR2SC5185NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low Noise(Units: mm)NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHzNF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.1 0.2 Super Mini-Mold package1.25 0.1ORDERING INFORMATIONPARTQUANTITY ARRA
2sc5181.pdf
DATA SHEETSILICON TRANSISTOR2SC5181NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz1.6 0.1 Ultra Super Mini-Mold package 0.8
2sc5180.pdf
DATA SHEET SILICON TRANSISTOR2SC5180NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low current consumption and high gain(Units : mm) S21e 2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHzS21e 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.1 0.2 Supper Mini-Mold package1.
2sc5182.pdf
DATA SHEETSILICON TRANSISTOR2SC5182NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low noise(Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.80.2 Mini-Mold package+0.1 1.5 0.65 0.15 EIAJ: SC-59ORDERING INFORMATIO
2sc5182.pdf
SMD Type TransistorsNPN Transistors2SC5182SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=3V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
