2SC518
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC518
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 63
W
Tensión colector-base (Vcb): 140
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SC518
2SC518
Datasheet (PDF)
0.1. Size:58K nec
2sc5184.pdf 
DATA SHEETSILICON TRANSISTOR2SC5184NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLDPACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low Noise(Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.1 0.1 Super Mini-Mold package1.25 0.1 EIAJ: SC-70ORDERING INFORMAT
0.2. Size:46K nec
2sc5186.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5186NPN EPITAXIAL SILICON RF TRANSISTORFOR LOW-NOISE MICROWAVE AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Low noiseNF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHzNF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 3-pin ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5186 50 pcs (N
0.3. Size:60K nec
2sc5183.pdf
DATA SHEETSILICON TRANSISTOR2SC5183NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLDPACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low Noise PACKAGE DIMENSIONS (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.8+0.2 0.3 4-pin Mini-Mold package1.5+0.2 0.1EIAJ: SC-61ORDERING
0.4. Size:50K nec
2sc5185.pdf
DATA SHEETSILICON TRANSISTOR2SC5185NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low Noise(Units: mm)NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHzNF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.1 0.2 Super Mini-Mold package1.25 0.1ORDERING INFORMATIONPARTQUANTITY ARRA
0.5. Size:44K nec
2sc5181.pdf
DATA SHEETSILICON TRANSISTOR2SC5181NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz1.6 0.1 Ultra Super Mini-Mold package 0.8
0.6. Size:46K nec
2sc5180.pdf
DATA SHEET SILICON TRANSISTOR2SC5180NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low current consumption and high gain(Units : mm) S21e 2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHzS21e 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.1 0.2 Supper Mini-Mold package1.
0.7. Size:56K nec
2sc5182.pdf
DATA SHEETSILICON TRANSISTOR2SC5182NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low noise(Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.80.2 Mini-Mold package+0.1 1.5 0.65 0.15 EIAJ: SC-59ORDERING INFORMATIO
0.8. Size:909K kexin
2sc5182.pdf
SMD Type TransistorsNPN Transistors2SC5182SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=3V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect
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