2SC53. Аналоги и основные параметры
Наименование производителя: 2SC53
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.6 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO5
Аналоги (замена) для 2SC53
- подборⓘ биполярного транзистора по параметрам
2SC53 даташит
2sc5339.pdf
2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mo
2sc5376fv.pdf
2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low Collector Saturation Voltage VCE (sat) (1) = 15 mV (typ.) 1.2 0.05 @IC = 10 mA/IB = 0.5 mA 0.8 0.05 High Collector Current IC = 400 mA (max) 1 2 3 Absolute Maximum Ratings (Ta = 25 C)
2sc5322ft.pdf
2SC5322FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.4dB (f = 2 GHz) High gain S 2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltag
2sc5356.pdf
2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times tf = 0.5 s (max) (I = 1.2 A) C High collectors breakdown voltage V = 800 V CEO High DC current gain h = 15 (min) (I = 0.15 A) FE C Maximum Ra
2sc5386.pdf
2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA
2sc5317.pdf
2SC5317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317 VHF UHF Band Low Noise Amplifier Applications Unit mm (chip fT = 16 GHz series) Low noise figure NF = 1.3dB (f = 2 GHz) High gain Ga = 9dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emi
2sc5359.pdf
2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit mm High breakdown voltage V = 230 V CEO Complementary to 2SA1987 Suitable for use in 100-W high fidelity audio amplifier s output stage. Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter volta
2sc5387.pdf
2SC5387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5387 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA
2sc5376f.pdf
2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low Collector Saturation Voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High Collector Current I = 400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating
2sc5322.pdf
2SC5322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.4dB (f = 2 GHz) High gain Ga = 10dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V
2sc5319.pdf
2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.3dB (f = 2 GHz) High gain Ga = 11.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5
2sc5376.pdf
2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low collector saturation voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High collector current I = 400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Un
2sc5355.pdf
2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times tr = 0.5 s (max), t = 0.3 s (max) f High collector breakdown voltage V = 400 V CEO High DC current gain h = 20 (min) FE Maximum Ratings (Ta = 25 C)
2sc5317ft.pdf
2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF UHF Band Low Noise Amplifier Applications Unit mm (chip fT = 16 GHz series) Low noise figure NF = 1.3dB (f = 2 GHz) High gain S 2 = 9dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage V
2sc5347.pdf
Ordering number EN5512A NPN Epitaxial Planar Silicon Transistor 2SC5347 High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications Features Package Dimensions High frequency medium output amplification unit mm (VCE=5V, IC=50mA) 2038A fT=4.7GHz typ (f=1GHz). [2SC5347] 2 S21e =8dB typ (f=1GHz). 4.5 NF=1.8dB typ (f=1GHz). 1.5 1.6 0.4 0
2sc5375.pdf
Ordering number EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain S21e =10dB typ (f=1GHz). unit mm High cutoff frequency fT=5.2GHz typ. 2059B [2SC5375] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2 Emitter 3 Collector SANYO MCP
2sc5303.pdf
Ordering number ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5303] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.2
2sc5304ls.pdf
Ordering number ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5304] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter Specifications 2.55
2sa608n 2sc536n.pdf
Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1
2sc5301.pdf
Ordering number EN5417A NPN Triple Diffused Planar Silicon Transistor 2SC5301 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5301] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1
2sc5388.pdf
Ordering number ENN6283 NPN Triple Diffused Planar Silicon Transistor 2SC5388 High-Voltage Switching Applications Features Package Dimensions High speed (Adoption of MBIT process). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC5388] On-chip damper diode. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 Base 1 2 3
2sc5304.pdf
Ordering number EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5304] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO TO-220FI
2sc5374a.pdf
Ordering number ENA1090 2SC5374A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, 2SC5374A High-Frequency Amplifier Applications Features High gain S21e 2=10.5dB typ (f=1GHz). High cut-off frequency fT=5.2GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-B
2sc5374.pdf
Ordering number EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain S21e =10.5dB typ (f=1GHz). unit mm High cutoff frequency fT=5.2GHz typ. 2106A [2SC5374] 0.75 0.3 0.6 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 Base 2 Emitter 3 Collector SANYO SMCP Spec
2sc5347a.pdf
Ordering number ENA1087 2SC5347A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, 2SC5347A Low-Noise Medium Output Amplifier Applications Features High-frequency medium output amplification (VCE=5V, IC=50mA) fT=4.7GHz typ (f=1GHz). S21e 2=8dB typ (f=1GHz). NF=1.8dB typ (f=1GHz). Specifications Absolute
2sc5300.pdf
Ordering number EN5416A NPN Triple Diffused Planar Silicon Transistor 2SC5300 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC5300] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2
2sa608 2sc536n.pdf
Ordering number ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 Emitter
2sc5302.pdf
Ordering number EN5363B NPN Triple Diffused Planar Silicon Transistor 2SC5302 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Fast speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC5302] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0
2sa1973 2sc5310.pdf
Ordering number ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacitance. 2018B Low collector-to-emitter saturation voltage. [2SA1973/2SC5310] High-speed switching. 0.4 Ultrasmall package facilitates miniaturization in end 0.16
2sc5305ls.pdf
Ordering number ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5305] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter Specifications 2.55
2sc5305.pdf
Ordering number EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5305] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO TO-220FI
2sc5338.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5338 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES High gain S21e 2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz Low distortion, low voltage IM2 = -55 dB TYP., IM3 = -76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dB V/75 4-pin power minimold package with improved gain
2sc5336.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES High gain S21e 2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 4-pin power minimold package with improved gain from the 2SC3357 ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5336 25 pcs (Non reel) Magazine
2sc5369.pdf
PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSION (in mm) High fT 2.1 0.1 14 GHz TYP. 1.25 0.1 High gain S21e 2 = 14 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA 6-pin small mini mold package ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
2sc5337.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES Low distortion IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz 4-pin power minimold package wi
2sc5347ae 2sc5347af.pdf
Ordering number ENA1087A 2SC5347A RF Transistor http //onsemi.com 12V, 150mA, fT=4.7GHz, NPN Single PCP Features High-frequency medium output amplification (VCE=5V, IC=50mA) fT=4.7GHz typ (f=1GHz) S21e =8dB typ (f=1GHz) 2 NF=1.8dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltag
2sc5374a.pdf
Ordering number ENA1090A 2SC5374A RF Transistor http //onsemi.com 10V, 100mA, fT=5.2GHz, NPN Single SMCP Features High gain 2 S21e =10.5dB typ (f=1GHz) High cut-off frequency fT=5.2GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emit
2sc5383 2sc5583.pdf
Power Transistors 2SC5583 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 20.0 0.5 5.0 0.3 (3.0) 3.3 0.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 Absolute Maximum Ra
2sc5393.pdf
Power Transistors 2SC5393 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to th
2sc5346 e.pdf
Transistor 2SC5346 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1982 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. 0.65 max. Small collector output capacitance Cob. +0.1 Absolute Maximum Rat
2sc5378 e.pdf
Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Rating
2sc5335 e.pdf
Transistor 2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Uni
2sc5346.pdf
Transistor 2SC5346 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1982 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. 0.65 max. Small collector output capacitance Cob. +0.1 Absolute Maximum Rat
2sc5378.pdf
Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Rating
2sc5379.pdf
Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25 C) 0.2 0.1 Par
2sc5335.pdf
Transistor 2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Uni
2sc5363 e.pdf
Transistor 2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Para
2sc5363.pdf
Transistor 2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Para
2sc5379 e.pdf
Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25 C) 0.2 0.1 Par
2sc5380.pdf
Power Transistors 2SC5380, 2SC5380A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=
2sc5353.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 1 TO-126 TO-126C DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications 1 1 TO-220 TO-220F FEATURES * Excellent switching times tR = 0.7 s(MAX), tF = 0.5 s (MAX) * High collectors breakdown voltage VCEO = 700V 1
2sc5353b.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN 1 1 TRANSISTOR TO-126 TO-126C DESCRIPTION 1 1 TO-220 TO-220F Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. FEATURES 1 1 * Excellent switching times tR = 0.7 s(MAX), tF = 0.5 s (MAX) TO-220F1 TO-251 * High collectors breakdown
2sc5305.pdf
UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications 1 * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE TO-220 1 Base 2 Colle
2sc5345sf.pdf
2SC5345SF NPN Silicon Transistor Description PIN Connection RF amplifier Features 3 High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] 1 Low output capacitance Cob=1.4pF(Typ.) [VCB=6V, IE=0] 2 SOT-23F Low base time constant and high gain Excellent noise response Ordering Information Type NO. Marking Package Code
2sc5343m.pdf
2SC5343M NPN Silicon Transistor Description PIN Connection General small signal amplifier Features Low collector saturation voltage VCE(sat)=0.25V(Max.) Low output capacitance Cob=2pF(Typ.) Complementary pair with 2SA1980M TO-92M Ordering Information Type NO. Marking Package Code 2SC5343M 5343 TO-92M Absolute maximum ratings Ta=25 C Characte
2sc5343u.pdf
2SC5343U NPN Silicon Transistor Description PIN Connection General small signal amplifier Features 3 Low collector saturation voltage VCE=0.25V(Max.) Low output capacitance Cob=2pF(Typ.) 1 2 Complementary pair with 2SA1980U Ordering Information SOT-323 Type NO. Marking Package Code D 2SC5343U SOT-323 Device Code h
2sc5343e.pdf
2SC5343E NPN Silicon Transistor Description PIN Connection General small signal amplifier Features 3 Low collector saturation voltage VCE(sat)=0.25V(Max.) 1 2 Low output capacitance Cob=2pF(Typ.) Complementary pair with 2SA1980E SOT-523 Ordering Information Type NO. Marking Package Code C 2SC5343E SOT-523 Device
2sc5345uf.pdf
2SC5345UF NPN Silicon Transistor Description PIN Connection RF amplifier Features 3 High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] 1 Low output capacitance 2 Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response SOT-323F Ordering Information Type NO. Marking Package Code
2sc5344s.pdf
2SC5344S NPN Silicon Transistor Description Audio power amplifier application Features High h h =100 320 FE FE C Complementary pair with 2SA1981S B E Ordering Information Part Number Marking Package SOT-23 FA 2SC5344S SOT-23 * Device Code hFE Rank Year & Week Code Factory Management Code Absolute maxim
2sc5343.pdf
2SC5343 NPN Silicon Transistor Description PIN Connection General small signal amplifier C B Features Low collector saturation voltage E VCE(sat)=0.25V(Max.) Low output capacitance Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92 Absolute maximum ratings Ta=25 C Cha
2sc5343ef.pdf
2SC5343EF NPN Silicon Transistor Description PIN Connection General small signal amplifier Features 3 Low collector saturation voltage VCE(sat)=0.25V(Max.) 1 Low output capacitance Cob=2pF(Typ.) Complementary pair with 2SA1980EF 2 SOT-523F Ordering Information Type NO. Marking Package Code C 2SC5343EF SOT-523F Devic
2sc5343-o.pdf
2SC5343 NPN Silicon Transistor Description PIN Connection General small signal amplifier C B Features Low collector saturation voltage E VCE(sat)=0.25V(Max.) Low output capacitance Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92 Absolute maximum ratings Ta=25 C Cha
2sc5343sf.pdf
2SC5343SF NPN Silicon Transistor Description PIN Connection General small signal amplifier 3 Features Low collector saturation voltage 1 VCE=0.25V(Max.) Low output capacitance Cob=2pF(Typ.) 2 Complementary pair with 2SA1980SF SOT-23F Ordering Information Type NO. Marking Package Code DA 2SC5343SF SOT-23F Device
2sc5345m.pdf
2SC5345M NPN Silicon Transistor Description PIN Connection RF amplifier Features High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain TO-92M Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5345M C5345
2sc5342s.pdf
2SC5342S NPN Silicon Transistor MEDIUM POWER AMPLIFIER Features Large collector current I =500mA C Low collector saturation voltage enabling C low-voltage operation B Complementary pair with 2SA1979S E Ordering Information SOT-23 Part Number Marking Package BA 2SC5342S SOT-23 * Device Code hFE Rank Year &
2sc5343s.pdf
2SC5343S NPN Silicon Transistor GENERAL SMALL SIGNAL AMPLIFIER Features Low collector saturation voltage V =0.25V(Max.) CE Low output capacitance C =2pF(Typ.) ob C Complementary pair with 2SA1980S B E Ordering Information SOT-23 Part Number Marking Package DA 2SC5343S SOT-23 * Device Code hFE Rank Year &
2sc5343-l.pdf
2SC5343 NPN Silicon Transistor Description PIN Connection General small signal amplifier C B Features Low collector saturation voltage E VCE(sat)=0.25V(Max.) Low output capacitance Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92 Absolute maximum ratings Ta=25 C Cha
2sc5342uf.pdf
2SC5342UF NPN Silicon Transistor Description PIN Connection Medium power amplifier Features 3 Large collector current IC=500mA 1 Low collector saturation voltage enabling low-voltage operation 2 Complementary pair with 2SA1979UF SOT-323F Ordering Information Type NO. Marking Package Code 2SC5342UF B SOT-323F Device Code hF
2sc5342m.pdf
2SC5342M NPN Silicon Transistor Description PIN Connection Medium power amplifier Features Large collector current IC=500mA Low collector saturation voltage enabling low-voltage operation Complementary pair with 2SA1979M TO-92M Ordering Information Type NO. Marking Package Code 2SC5342M 5342 TO-92M Absolute maximum ratings (Ta=25 C) Character
2sc5342u.pdf
2SC5342U NPN Silicon Transistor Description PIN Connection Medium power amplifier Features C Large collector current IC=500mA B Low collector saturation voltage enabling low-voltage operation E Complementary pair with 2SA1979U SOT-323 Ordering Information Type NO. Marking Package Code 2SC5342U B SOT-323 hFE rank Absolute maximum ratings (
2sc5344.pdf
2SC5344 NPN Silicon Transistor Description PIN Connection Audio power amplifier application C B Features High hFE hFE=100 320 E Complementary pair with 2SA1981 TO-92 Ordering Information Type NO. Marking Package Code 2SC5344 C5344 TO-92 Absolute maximum ratings (Ta=25 C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 35 V Collect
2sc5342.pdf
2SC5342 NPN Silicon Transistor Description PIN Connection Medium power amplifier C Features B Large collector current IC=500mA Low collector saturation voltage enabling low-voltage operation E Complementary pair with 2SA1979 TO-92 Ordering Information Type NO. Marking Package Code 2SC5342 C5342 TO-92 Absolute maximum ratings (Ta=25 C) Cha
2sc5343-g.pdf
2SC5343 NPN Silicon Transistor Description PIN Connection General small signal amplifier C B Features Low collector saturation voltage E VCE(sat)=0.25V(Max.) Low output capacitance Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92 Absolute maximum ratings Ta=25 C Cha
2sc5344u.pdf
2SC5344U NPN Silicon Transistor Description PIN Connection Audio power amplifier application Features 3 High hFE hFE=100 320 Complementary pair with 2SA1981U 1 2 Ordering Information SOT-323 Type NO. Marking Package Code F 2SC5344U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum ratings (Ta=25 C)
2sc5345ef.pdf
2SC5345EF Semiconductor Semiconductor NPN Silicon Transistor Description RF amplifier Features High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5345
2sc5343-y.pdf
2SC5343 NPN Silicon Transistor Description PIN Connection General small signal amplifier C B Features Low collector saturation voltage E VCE(sat)=0.25V(Max.) Low output capacitance Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92 Absolute maximum ratings Ta=25 C Cha
2sc5345.pdf
2SC5345 NPN Silicon Transistor Description PIN Connection RF amplifier C Features High current transition frequency B fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance E Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain TO-92 Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5
2sc5343uf.pdf
2SC5343UF Semiconductor Semiconductor NPN Silicon Transistor Description General small signal amplifier Features Low collector saturation voltage VCE=0.25V(Max.) Low output capacitance Cob=2pF(Typ.) Complementary pair with 2SA1980UF Ordering Information Type NO. Marking Package Code D 2SC5343UF SOT-323F Device Code hFE Rank
2sc5390.pdf
2SC5390 Silicon NPN Epitaxial High Frequency Amplifier ADE-208-492 (Z) 1st. Edition December. 1996 Features Excellent high frequency characteristics fT = 1.4GHz (typ.) Low output capacitance Cob = 2.4 pF (typ.) Isolated package TO 126FM Outline TO 126FM 1 2 3 1. Emitter 2. Collector 3. Base 2SC5390 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings
2sc535.pdf
2SC535 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC535 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC
2sc5344.pdf
2SC5344 0.8A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Audio power amplifier application A High hFE=100 320 L 3 Complementary to 2SA1981 3 Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE(1) D Product-Rank 2SC5344-O 2SC5344-Y H J F G Range 100
2sc5345.pdf
2SC5345 0.02A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE RF amplifier A L High current transition frequency fT=550MHz(Typ.), 3 3 [VCE=6V, IE=-1mA] Top View C B Low output capacitance Cob=1.4pF(Typ.) [VCB=6V, IE=0] 1 Low base time constant and hig
2sc5398.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sc5383.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sc5396.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc5395.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc5397.pdf
transistor 2SC5397 For High Frequency Amplify, Middle Frequency Amplify Silicon NPN Epitaxial Type Micro Frame type DESCRIPTION OUTLINE DRAWING UNIT mm 2SC5397 is a silicon NPN epitaxial type transistor. TERMINAL CONNECTOR EMITTER EIAJ - COLLECTOR JEDEC - BASE MAXIMUM RATINGS Ta=25 Symbol Parameter Ratings Unit MARKIN
2sc5384.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an
2sc536n.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC536N TRANSISTOR (NPN) TO 92 FEATURES 1. EMITTER Large Current Capacity and Wide ASO. 2. COLLECTOR APPLICATIONS 3. BASE Capable of Being Used in The Low Frequency to High Frequency Range. Equivalent Circuit C536N=Device code C536N Solid dot=Green molding compound devi
2sc5343.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC5343 TRANSISTOR (NPN) FEATURES Excellent hFE Linearity Low Noise 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO VCEO Collector-Emitter Voltage 50 V V Emitter-Base Voltage 5 V
2sc536s.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC536S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V
2sc5344.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC5344 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER Audio power amplifier application 3. COLLECTOR High hFE hFE=100 320 Complementary to 2SA1981 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emit
2sc5339.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5339 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 sim
2sc5386.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5386 DESCRIPTION With TO-3P(H)IS package High voltage;high speed Low collector saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,color TV High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symb
2sc5382.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5382 DESCRIPTION With TO-220F package High Voltage High speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collec
2sc5358.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5358 DESCRIPTION With TO-3P(I) package Complement to type 2SA1986 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-
2sc5370.pdf
2SC5370 Silicon NPN Epitaxial Planar Transistor Application Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC5370 Symbol Conditions 2SC5370 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 60 ICBO VCB=60V 10max A V VCEO 40 IEBO VEB=7V 10max A V VEBO 7 V(BR)CEO
2sc5333.pdf
2SC5333 Silicon NPN Triple Diffused Planar Transistor Application Series Regulator, Switch, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC5333 Symbol Conditions 2SC5333 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 300 ICBO VCB=300V 1.0max mA V VCEO 300 IEBO VEB=6V 1.0max mA V VEBO 6 V(B
2sc5343.pdf
2SC5343 TRANSISTOR (NPN) SOT-23 FEATURES Excellent hFE Linearity Low Noise. MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Symbol Parameter Value Units 2. EMITTER VCBO Collector-Base Voltage 60 V 3. COLLECTOR VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V Collector Current -Continuous IC 150 mA Base Current -Continuous Ib 50 mA
2sc5345.pdf
2SC5345 TRANSISTOR (NPN) FEATURES SOT-23 RF amplifier High current transition frequency fT=550MHz(Typ.), 1. BASE [VCE=6V, IE=-1mA] 2. EMITTER Low output capacitance 3. COLLECTOR Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Marking 5345 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Va
2sc5343.pdf
2SC5343(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE Linearity hFE(2)=100(Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise NF=10dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and
2sc5344.pdf
2SC5344(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio power amplifier application High hFE hFE=100 320 Complementary to 2SA1981 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 30 V VEBO Emit
2sc5343 sot-23.pdf
2SC5343 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Excellent hFE Linearity hFE(2)=100(Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise NF=1dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V V
2sc5344.pdf
2SC5344 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage 30 VCEO V VCBO Collector-Base Voltage 35 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 800 mA Total Device Dissipation PD 200 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature -55 t
2sc536k.pdf
2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Large current capacity and wide ASO / Applications Small signal general purpose amplifier appl
2sc536km 2sc536m.pdf
2SC536KM(BR3DG536KM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity and wide ASO. / Applications Small signal general purpose amplifier applications
2sc5371.pdf
2SC5371(BR3DA5371F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV
l2sc5343qlt1g.pdf
LESHAN RADIO COMPANY, LTD. L2SC5343QLT1G General Purpose Transistors Series S-L2SC5343QLT1G NPN Silicon FEATURE Series Excellent hFE linearity 3 hFE(2)=100(Typ) at VCE=6V,IC=150Ma hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise NF=1Db(Typ).at f=1KHz. 2 We declare that the material of product compliance with RoHS requirements. SOT 23 S- Prefix for Automotive a
l2sc5343rlt1g.pdf
LESHAN RADIO COMPANY, LTD. L2SC5343QLT1G General Purpose Transistors Series NPN Silicon S-L2SC5343QLT1G FEATURE Series Excellent hFE linearity hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3 hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise NF=1Db(Typ).at f=1KHz. We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applic
l2sc5343slt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC5343QLT1G NPN Silicon Series S-L2SC5343QLT1G FEATURE Excellent hFE linearity Series hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3 hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). Low noise NF=1Db(Typ).at f=1KHz. 1 2 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Appli
2sc5338.pdf
SMD Type Transistors NPN Transistors 2SC5338 SOT-89 Unit mm 1.70 0.1 4 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Emitter 2.Base 3.Emitter 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 V Emitter -
2sc5310.pdf
SMD Type Transistors NPN Transistors 2SC5310 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=1A 1 2 Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complement to 2SA1973 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Bas
2sc5320.pdf
SMD Type Transistors NPN Transistors 2SC5320 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=10mA 1 2 Collector Emitter Voltage VCEO=5V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 8 Collecto
2sc5336.pdf
SMD Type Transistors NPN Transistors 2SC5336 SOT-89 Unit mm 1.70 0.1 4 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Emitter 2.Base 3.Emitter 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter -
2sc5344sf.pdf
SMD Type Transistors NPN Transistors 2SC5344SF SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High hFE hFE=100 320 Complementary pair with 2SA1981SF 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter
2sc5337.pdf
SMD Type Transistors NPN Transistors 2SC5337 SOT-89 Unit mm 1.70 0.1 4 Features Collector Current Capability IC=250mA Collector Emitter Voltage VCEO=15V 0.42 0.1 0.46 0.1 1.Emitter 2.Base 3.Emitter 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 15 V Emitter -
2sc5342uf.pdf
SMD Type Transistors NPN Transistors 2SC5342UF Features Large collector current IC=500mA Low collector saturation voltage enabling low-voltage operation Complementary to 2SA1979UF 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 V Emitter -
2sc5315.pdf
SMD Type Transistors NPN Transistors 2SC5315 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=5V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 8 Collecto
2sc5343uf.pdf
SMD Type Transistors NPN Transistors 2SC5343UF Features Low collector saturation voltage VCE=0.25V(Max.) Low output capacitance Cob=2pF(Typ.) Complementary to 2SA1980UF 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Volt
2sc5307.pdf
SMD Type Transistors NPN Transistors 2SC5307 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=400V Marking AL 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emit
2sc5339.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5339 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal output applications for medium resolution display &
2sc5353.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5353 DESCRIPTION Collector Emitter Sustaining Voltage V = 800V(Min.) CEO(SUS) Low Collector Saturation Voltage V =1V(Max) @ I = 1.2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in lighting applications and low cost switch-mode power
2sc5352.pdf
isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sc5386.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5386 DESCRIPTION High Breakdown Voltage High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display, color TV. High speed switching applications. ABSOLU
2sc5359.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5359 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1987 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco
2sc5387.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5387 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display, color TV. High speed switch
2sc5382.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC5382 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 550V(Min) CEO(SUS) High Switching Speed Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applica
2sc5354.pdf
isc Silicon NPN Power Transistor 2SC5354 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed and high voltage switching applications. Switching regulator applications. High speed DC-DC converter applications. ABSOLUTE M
2sc5302.pdf
isc Silicon NPN Power Transistor 2SC5302 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for inverter lighting applications. Absolute maximum ratings (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V
2sc5358.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5358 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1986 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco
2sc5305.pdf
isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION High Breakdown Voltage V = 1200V (Min) (BR)CBO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for inverter lighting applications. Absolute maximum ratings (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collect
Другие транзисторы: 2SC526M, 2SC527, 2SC5271, 2SC5273, 2SC528, 2SC5287, 2SC529, 2SC529A, BD222, 2SC530, 2SC530A, 2SC531, 2SC531A, 2SC532, 2SC533, 2SC5333, 2SC534
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