2SC53 Datasheet and Replacement

2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mo

2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit: mmFor Muting and Switching Applications Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) 1.20.05 @IC = 10 mA/IB = 0.5 mA 0.80.05 High Collector Current: IC = 400 mA (max) 1 2 3Absolute Maximum Ratings (Ta = 25C)

2SC5322FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: |S |2 = 10dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmitter-base voltag

2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times: tf = 0.5 s (max) (I = 1.2 A) C High collectors breakdown voltage: V = 800 V CEO High DC current gain: h = 15 (min) (I = 0.15 A) FE CMaximum Ra

2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

2SC5317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm (chip: fT = 16 GHz series) Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 9dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmi

2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V CEO Complementary to 2SA1987 Suitable for use in 100-W high fidelity audio amplifiers output stage. Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter volta

2SC5387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5387 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High Collector Current: I = 400 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating

2SC5376CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5376CT General Purpose Amplifier Applications Unit: mmSwitching and Muting Switch Applications 0.60.050.50.03 Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA Large collector current: IC = 400 mA (max) Absolute Maximum Ratings (Ta = 25C) 0.35

2SC5322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: Ga = 10dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmitter-base voltage VEBO 1.5 V

2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 11.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage VCEO 5 VEmitter-base voltage VEBO 1.5

2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High collector current: I = 400 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Un

2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times: tr = 0.5 s (max), t = 0.3 s (max) f High collector breakdown voltage: V = 400 V CEO High DC current gain: h = 20 (min) FEMaximum Ratings (Ta = 25C)

2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm (chip: fT = 16 GHz series) Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: |S |2 = 9dB (f = 2 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 8 VCollector-emitter voltage V

Ordering number:EN5512ANPN Epitaxial Planar Silicon Transistor2SC5347High-Frequency Semi-Power Output Stage,Low-Noise Medium Output Amplifiers ApplicationsFeatures Package Dimensions High frequency medium output amplificationunit:mm(VCE=5V, IC=50mA)2038A: fT=4.7GHz typ (f=1GHz).[2SC5347]2: S21e =8dB typ (f=1GHz).4.5: NF=1.8dB typ (f=1GHz). 1.51.60.4 0

Ordering number:EN5541ANPN Epitaxial Planar Silicon Transistor2SC5375VHF to UHF Band OSC,High-Frequency Amplifiers ApplicationsFeatures Package Dimensions2 High gain : S21e =10dB typ (f=1GHz).unit:mm High cutoff frequency : fT=5.2GHz typ.2059B[2SC5375]0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Base2 : Emitter3 : CollectorSANYO : MCP

Ordering number:ENN6177NPN Triple Diffused Planar Silicon Transistor2SC5303Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2111A High reliability (Adoption of HVP process).[2SC5303] Adoption of MBIT process.20.0 5.01.751.02.91.2

Ordering number:ENN5883ANPN Triple Diffused Planar Silicon Transistor2SC5304LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5304]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55

Ordering number : ENN6324A2SA608N / 2SC536NPNP / NPN Epitaxial Planar Silicon Transistors2SA608N / 2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to high unit : mmfrequency range. 2205[2SA608N / 2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.50.450.441

Ordering number:EN5417ANPN Triple Diffused Planar Silicon Transistor2SC5301Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2111A High reliability (Adoption of HVP process).[2SC5301] Adoption of MBIT process.20.0 5.01.751.02.91

Ordering number:ENN6283NPN Triple Diffused Planar Silicon Transistor2SC5388High-Voltage Switching ApplicationsFeatures Package Dimensions High speed (Adoption of MBIT process).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC5388] On-chip damper diode.16.05.63.43.12.82.0 2.01.00.61 : Base1 2 3

Ordering number:EN5883NPN Triple Diffused Planar Silicon Transistor2SC5304Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5304]4.510.02.83.20.90.71.20.751:Base1 2 32:Collector3:Emitter2.55 2.55SANYO:TO-220FI

Ordering number : ENA1090 2SC5374ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Band OSC,2SC5374AHigh-Frequency Amplifier ApplicationsFeatures High gain : S21e2=10.5dB typ (f=1GHz). High cut-off frequency : fT=5.2GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-B

Ordering number:EN5535ANPN Epitaxial Planar Silicon Transistor2SC5374VHF to UHF Band OSC,High-Frequency Amplifiers ApplicationsFeatures Package Dimensions2 High gain : S21e =10.5dB typ (f=1GHz).unit:mm High cutoff frequency : fT=5.2GHz typ.2106A[2SC5374]0.750.30.60 to 0.10.20.10.5 0.51.61 : Base2 : Emitter3 : CollectorSANYO : SMCPSpec

Ordering number : ENA1087 2SC5347ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Semi-Power Output Stage,2SC5347ALow-Noise Medium Output Amplifier ApplicationsFeatures High-frequency medium output amplification(VCE=5V, IC=50mA): fT=4.7GHz typ (f=1GHz).:S21e2=8dB typ (f=1GHz).: NF=1.8dB typ (f=1GHz).SpecificationsAbsolute

Ordering number:EN5416ANPN Triple Diffused Planar Silicon Transistor2SC5300Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC5300] Adoption of MBIT process.16.05.63.43.12.82

Ordering number:ENN6324PNP/NPN Epitaxial Planar Silicon Transistors2SA608N/2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to highunit:mmfrequency range.2164[2SA608N/2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.450.51.270.45 0.441 2 31 : Emitter

Ordering number:EN5363BNPN Triple Diffused Planar Silicon Transistor2SC5302Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions Fast speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (adoption of HVP process).[2SC5302] Adoption of MBIT process.16.05.63.43.12.82.0

Ordering number:ENN5613PNP/NPN Epitaxial Planar Silicon Transistors2SA1973/2SC5310DC/DC Converter ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacitance.2018B Low collector-to-emitter saturation voltage.[2SA1973/2SC5310] High-speed switching.0.4 Ultrasmall package facilitates miniaturization in end 0.16

Ordering number:ENN5884ANPN Triple Diffused Planar Silicon Transistor2SC5305LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5305]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55

Ordering number:EN5884NPN Triple Diffused Planar Silicon Transistor2SC5305Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5305]4.510.02.83.20.90.71.20.751:Base1 2 32:Collector3:Emitter2.55 2.55SANYO:TO-220FI

DATA SHEETNPN SILICON RF TRANSISTOR2SC5338NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLDFEATURES High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz Low distortion, low voltage: IM2 = -55 dB TYP., IM3 = -76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBV/75 4-pin power minimold package with improved gain

DATA SHEETNPN SILICON RF TRANSISTOR2SC5336NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLDFEATURES High gain: S21e2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 4-pin power minimold package with improved gain from the 2SC3357ORDERING INFORMATIONPart Number Quantity Supplying Form2SC5336 25 pcs (Non reel) Magazine

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5369NPN EPITAXIAL SILICON TRANSISTOR FORMICROWAVE AMPLIFICATIONFEATURES PACKAGE DIMENSION (in mm) High fT2.10.114 GHz TYP.1.250.1 High gain| S21e | 2 = 14 dB TYP.@f = 2 GHz, VCE = 3 V, IC = 10 mA NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA 6-pin small mini mold packageABSOLUTE MAXIMUM RATINGS (TA = 25 C)

DATA SHEETNPN SILICON RF TRANSISTOR2SC5337NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLDFEATURES Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA Low noiseNF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHzNF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz 4-pin power minimold package wi

Ordering number : ENA1087A2SC5347ARF Transistorhttp://onsemi.com12V, 150mA, fT=4.7GHz, NPN Single PCPFeatures High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz) : S21e =8dB typ (f=1GHz) 2 : NF=1.8dB typ (f=1GHz)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag

Ordering number : ENA1090A2SC5374ARF Transistorhttp://onsemi.com10V, 100mA, fT=5.2GHz, NPN Single SMCPFeatures High gain 2 : S21e =10.5dB typ (f=1GHz) High cut-off frequency : fT=5.2GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-to-Emitter Voltage VCEO 10 VEmit

Power Transistors2SC5583Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output20.00.5 5.00.3(3.0) 3.30.2 Features High breakdown voltage, and high reliability through the use of aglass passivation layer(1.5) High-speed switching Wide area of safe operation (ASO) (1.5)2.00.32.70.33.00.31.00.2 Absolute Maximum Ra

Power Transistors2SC5393Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to th

Transistor2SC5346Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA19822.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.0.65 max.Small collector output capacitance Cob.+0.1 Absolute Maximum Rat

Transistor2SC5378Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Low noise figure NF.High gain.1High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rating

Transistor2SC5335(Tentative)Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbol Ratings Uni

Transistor2SC5346Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA19822.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.0.65 max.Small collector output capacitance Cob.+0.1 Absolute Maximum Rat

Transistor2SC5378Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Low noise figure NF.High gain.1High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rating

Transistor2SC5379Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.High transition frequency fT.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packing.Absolute Maximum Ratings (Ta=25C)0.2 0.1Par

Transistor2SC5335(Tentative)Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbol Ratings Uni

Transistor2SC5363(Tentative)Silicon NPN epitaxial planer typeFor low-voltage high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Para

Transistor2SC5363(Tentative)Silicon NPN epitaxial planer typeFor low-voltage high-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Para

Transistor2SC5379Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.High transition frequency fT.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packing.Absolute Maximum Ratings (Ta=25C)0.2 0.1Par

Power Transistors2SC5380, 2SC5380ASilicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=

UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 11TO-126 TO-126C DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications 11TO-220 TO-220F FEATURES * Excellent switching times: tR = 0.7s(MAX), tF = 0.5s (MAX) * High collectors breakdown voltage: VCEO = 700V 1

UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN 1 1TRANSISTOR TO-126TO-126C DESCRIPTION 11TO-220 TO-220FSwitching Regulator and High Voltage Switching ApplicationsHigh-Speed DC-DC Converter Applications. FEATURES 11* Excellent switching times: tR = 0.7s(MAX), tF = 0.5s (MAX) TO-220F1 TO-251* High collectors breakdown

UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications 1* Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE TO-220 1: Base 2: Colle

2SC5345SFNPN Silicon TransistorDescription PIN Connection RF amplifier Features 3 High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] 1 Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] 2 SOT-23F Low base time constant and high gain Excellent noise response Ordering Information Type NO. Marking Package Code

2SC5343MNPN Silicon TransistorDescription PIN Connection General small signal amplifier Features Low collector saturation voltage : VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980M TO-92M Ordering Information Type NO. Marking Package Code 2SC5343M 5343 TO-92MAbsolute maximum ratings Ta=25C Characte

2SC5343UNPN Silicon TransistorDescription PIN Connection General small signal amplifier Features 3 Low collector saturation voltage : VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) 1 2 Complementary pair with 2SA1980U Ordering Information SOT-323 Type NO. Marking Package Code D 2SC5343U SOT-323 Device Code h

2SC5343ENPN Silicon TransistorDescription PIN Connection General small signal amplifier Features 3 Low collector saturation voltage : VCE(sat)=0.25V(Max.) 1 2 Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980E SOT-523 Ordering Information Type NO. Marking Package Code C 2SC5343E SOT-523 Device

2SC5345UFNPN Silicon TransistorDescription PIN Connection RF amplifier Features 3 High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] 1 Low output capacitance : 2 Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response SOT-323F Ordering Information Type NO. Marking Package Code

2SC5344S NPN Silicon Transistor Description Audio power amplifier application Features High h : h =100~320 FE FE C Complementary pair with 2SA1981S B E Ordering Information Part Number Marking Package SOT-23 FA 2SC5344S SOT-23 * Device Code hFE Rank Year & Week Code Factory Management Code Absolute maxim

2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha

2SC5343EFNPN Silicon TransistorDescription PIN Connection General small signal amplifier Features 3 Low collector saturation voltage : VCE(sat)=0.25V(Max.) 1 Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980EF 2 SOT-523F Ordering Information Type NO. Marking Package Code C 2SC5343EF SOT-523F Devic

2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha

2SC5343SFNPN Silicon TransistorDescription PIN Connection General small signal amplifier 3 Features Low collector saturation voltage : 1 VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) 2 Complementary pair with 2SA1980SF SOT-23F Ordering Information Type NO. Marking Package Code DA 2SC5343SF SOT-23F Device

2SC5342SFNPN Silicon TransistorDescription PIN Connection Medium power amplifier 3 Features Large collector current : IC=500mA 1 Low collector saturation voltage enabling low-voltage operation 2 Complementary pair with 2SA1979SF SOT-23F Ordering Information Type NO. Marking Package Code BA 2SC5342SF SOT-23F Device Code

2SC5345MNPN Silicon TransistorDescription PIN Connection RF amplifier Features High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain TO-92M Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5345M C5345

2SC5342S NPN Silicon Transistor MEDIUM POWER AMPLIFIER Features Large collector current : I =500mA C Low collector saturation voltage enabling C low-voltage operation B Complementary pair with 2SA1979S E Ordering Information SOT-23 Part Number Marking Package BA 2SC5342S SOT-23 * Device Code hFE Rank Year &

2SC5343S NPN Silicon Transistor GENERAL SMALL SIGNAL AMPLIFIER Features Low collector saturation voltage : V =0.25V(Max.) CE Low output capacitance : C =2pF(Typ.) obC Complementary pair with 2SA1980S B E Ordering Information SOT-23 Part Number Marking Package DA 2SC5343S SOT-23 * Device Code hFE Rank Year &

2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha

2SC5342UFNPN Silicon TransistorDescription PIN Connection Medium power amplifier Features 3 Large collector current : IC=500mA 1 Low collector saturation voltage enabling low-voltage operation 2 Complementary pair with 2SA1979UF SOT-323F Ordering Information Type NO. Marking Package Code 2SC5342UF B SOT-323F Device Code hF

2SC5342MNPN Silicon TransistorDescription PIN Connection Medium power amplifier Features Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation Complementary pair with 2SA1979M TO-92M Ordering Information Type NO. Marking Package Code 2SC5342M 5342 TO-92M Absolute maximum ratings (Ta=25C) Character

2SC5342UNPN Silicon TransistorDescription PIN Connection Medium power amplifier Features C Large collector current : IC=500mA B Low collector saturation voltage enabling low-voltage operation E Complementary pair with 2SA1979U SOT-323 Ordering Information Type NO. Marking Package Code 2SC5342U B SOT-323 : hFE rank Absolute maximum ratings (

2SC5344NPN Silicon TransistorDescription PIN Connection Audio power amplifier application CBFeatures High hFE : hFE=100~320 E Complementary pair with 2SA1981 TO-92 Ordering Information Type NO. Marking Package Code 2SC5344 C5344 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-Base voltage VCBO 35 VCollect

2SC5342NPN Silicon TransistorDescription PIN Connection Medium power amplifier CFeatures B Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation E Complementary pair with 2SA1979 TO-92 Ordering Information Type NO. Marking Package Code 2SC5342 C5342 TO-92 Absolute maximum ratings (Ta=25C) Cha

2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha

2SC5344UNPN Silicon TransistorDescription PIN Connection Audio power amplifier application Features 3 High hFE : hFE=100~320 Complementary pair with 2SA1981U 1 2Ordering Information SOT-323 Type NO. Marking Package Code F 2SC5344U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum ratings (Ta=25C)

2SC5345EFSemiconductor Semiconductor NPN Silicon TransistorDescription RF amplifier Features High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5345

2SC5343NPN Silicon TransistorDescription PIN Connection General small signal amplifier CBFeatures Low collector saturation voltage E: VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) TO-92 Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92Absolute maximum ratings Ta=25C Cha

2SC5345NPN Silicon TransistorDescription PIN Connection RF amplifier CFeatures High current transition frequency B fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : E Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain TO-92 Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5

2SC5343UFSemiconductor Semiconductor NPN Silicon TransistorDescription General small signal amplifier Features Low collector saturation voltage : VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary pair with 2SA1980UF Ordering Information Type NO. Marking Package Code D 2SC5343UF SOT-323F Device Code hFE Rank

2SC5390Silicon NPN EpitaxialHigh Frequency AmplifierADE-208-492 (Z)1st. EditionDecember. 1996Features Excellent high frequency characteristicsfT = 1.4GHz (typ.) Low output capacitanceCob = 2.4 pF (typ.) Isolated packageTO126FMOutlineTO126FM1231. Emitter2. Collector3. Base2SC5390Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings

2SC535Silicon NPN Epitaxial PlanarApplicationVHF amplifier, mixer, local oscillatorOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC535Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC

2SC5344 0.8A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Audio power amplifier application A High hFE=100~320 L3 Complementary to 2SA1981 3Top View C B11 22K ECLASSIFICATION OF hFE(1) DProduct-Rank 2SC5344-O 2SC5344-Y H JF GRange 100

2SC5345 0.02A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE RF amplifier AL High current transition frequency fT=550MHz(Typ.), 33[VCE=6V, IE=-1mA] Top ViewC B Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] 1 Low base time constant and hig

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

transistor 2SC5397 For High Frequency Amplify, Middle Frequency Amplify Silicon NPN Epitaxial Type MicroFrame typeDESCRIPTION OUTLINE DRAWING UNITmm 2SC5397 is a silicon NPN epitaxial type transistor. TERMINAL CONNECTOR EMITTER EIAJ - COLLECTOR JEDEC - BASE MAXIMUM RATINGSTa=25 Symbol Parameter Ratings Unit MARKIN

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC536N TRANSISTOR (NPN)TO 92 FEATURES 1. EMITTER Large Current Capacity and Wide ASO.2. COLLECTORAPPLICATIONS 3. BASE Capable of Being Used in The Low Frequency to HighFrequency Range. Equivalent Circuit C536N=Device code C536NSolid dot=Green molding compound devi

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC5343 TRANSISTOR (NPN)FEATURES Excellent hFE Linearity Low Noise1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOVCEO Collector-Emitter Voltage 50 V V Emitter-Base Voltage 5 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC536S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC5344 TRANSISTOR (NPN)FEATURES1. BASE 2. EMITTER Audio power amplifier application3. COLLECTOR High hFE : hFE=100~320 Complementary to 2SA1981MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 V VCEO Collector-Emit

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC5339 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 sim

JMnic Product Specification Silicon NPN Power Transistors 2SC5386 DESCRIPTION With TO-3P(H)IS package High voltage;high speed Low collector saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,color TV High speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symb

JMnic Product Specification Silicon NPN Power Transistors 2SC5382 DESCRIPTION With TO-220F package High Voltage High speed switching PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1200 V VCEO Collec

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5358 DESCRIPTION With TO-3P(I) package Complement to type 2SA1986 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-

2SC5370Silicon NPN Epitaxial Planar Transistor Application : Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5370 Symbol Conditions 2SC5370 UnitUnit 0.24.20.210.1c0.52.8VCBO 60 ICBO VCB=60V 10max AVVCEO 40 IEBO VEB=7V 10max AVVEBO 7 V(BR)CEO

2SC5333Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator, Switch, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5333 Symbol Conditions 2SC5333 UnitUnit 0.24.20.210.1c0.52.8VCBO 300 ICBO VCB=300V 1.0max mAVVCEO 300 IEBO VEB=6V 1.0max mAVVEBO 6 V(B

2SC5343 TRANSISTOR (NPN)SOT-23 FEATURES Excellent hFE Linearity Low Noise. MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Symbol Parameter Value Units2. EMITTER VCBO Collector-Base Voltage 60 V 3. COLLECTOR VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V Collector Current -Continuous IC 150 mABase Current -Continuous Ib 50 mA

2SC5345TRANSISTOR (NPN)FEATURES SOT-23 RF amplifier High current transition frequency fT=550MHz(Typ.), 1. BASE [VCE=6V, IE=-1mA] 2. EMITTER Low output capacitance : 3. COLLECTOR Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Marking: 5345 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Va

2SC5343(NPN)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=10dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V Dimensions in inches and

2SC5344(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio power amplifier application High hFE : hFE=100~320 Complementary to 2SA1981 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 30 V VEBO Emit

2SC5345 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features RF amplifier High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Dimensions in inches and (millimeters) Excellent noise response Marking: 5345 MAXIMUM RATINGS (TA=25

2SC5343 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=1dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 V V

2SC5344NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage30VCEOVVCBOCollector-Base Voltage 35 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 800 mATotal Device DissipationPD200 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -55 t

2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Large current capacity and wide ASO / Applications Small signal general purpose amplifier appl

2SC536KM(BR3DG536KM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity and wide ASO. / Applications Small signal general purpose amplifier applications

2SC5371(BR3DA5371F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV

LESHAN RADIO COMPANY, LTD.L2SC5343QLT1GGeneral Purpose Transistors SeriesS-L2SC5343QLT1GNPN SiliconFEATURE Series Excellent hFE linearity 3:hFE(2)=100(Typ) at VCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise:NF=1Db(Typ).at f=1KHz. 2 We declare that the material of product compliance with RoHS requirements.SOT 23 S- Prefix for Automotive a

LESHAN RADIO COMPANY, LTD.L2SC5343QLT1GGeneral Purpose Transistors SeriesNPN SiliconS-L2SC5343QLT1GFEATURE SeriesExcellent hFE linearity :hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise:NF=1Db(Typ).at f=1KHz. We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applic

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC5343QLT1GNPN Silicon SeriesS-L2SC5343QLT1GFEATURE Excellent hFE linearity Series:hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). Low noise:NF=1Db(Typ).at f=1KHz. 12 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Appli

SMD Type TransistorsNPN Transistors2SC5338SOT-89Unit:mm1.70 0.14 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Emitter2.Base3.Emitter4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 V Emitter -

SMD Type TransistorsNPN Transistors2SC5310SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=1A1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95 -0.1 0.1 -0.01 Complement to 2SA1973 +0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Bas

SMD Type TransistorsNPN Transistors2SC5320SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=10mA1 2 Collector Emitter Voltage VCEO=5V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 8 Collecto

SMD Type TransistorsNPN Transistors2SC5336SOT-89Unit:mm1.70 0.14 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Emitter2.Base3.Emitter4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter -

SMD Type TransistorsNPN Transistors2SC5344SFSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High hFE : hFE=100~320 Complementary pair with 2SA1981SF1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter

SMD Type TransistorsNPN Transistors2SC5337SOT-89Unit:mm1.70 0.14 Features Collector Current Capability IC=250mA Collector Emitter Voltage VCEO=15V0.42 0.10.46 0.11.Emitter2.Base3.Emitter4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 15 V Emitter -

SMD Type TransistorsNPN Transistors2SC5342UF Features Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation Complementary to 2SA1979UF1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 V Emitter -

SMD Type TransistorsNPN Transistors2SC5315SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=5V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 8 Collecto

SMD Type TransistorsNPN Transistors2SC5343UF Features Low collector saturation voltage : VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary to 2SA1980UF1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Volt

SMD Type TransistorsNPN Transistors2SC5307SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=400V Marking : AL0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emit

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5339DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal output applications for medium resolutiondisplay &

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5353DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 800V(Min.)CEO(SUS)Low Collector Saturation Voltage: V =1V(Max) @ I = 1.2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications and low costswitch-mode power

isc Silicon NPN Power Transistor 2SC5352DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5386DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolutiondisplay, color TV.High speed switching applications.ABSOLU

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5359DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1987100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsReco

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5387DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TV.High speed switch

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5382DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 550V(Min)CEO(SUS)High Switching SpeedLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplica

isc Silicon NPN Power Transistor 2SC5354DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applications.Switching regulator applications.High speed DC-DC converter applications.ABSOLUTE M

isc Silicon NPN Power Transistor 2SC5302DESCRIPTIONHigh Breakdown Voltage:V = 1500V (Min)CBOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for inverter lighting applications.Absolute maximum ratings (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5358DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1986100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsReco

isc Silicon NPN Power Transistor 2SC5305DESCRIPTIONHigh Breakdown Voltage:V = 1200V (Min)(BR)CBOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for inverter lighting applications.Absolute maximum ratings (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collect