2SC537. Аналоги и основные параметры
Наименование производителя: 2SC537
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 115 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hFE): 120
Корпус транзистора: TO92
Аналоги (замена) для 2SC537
- подборⓘ биполярного транзистора по параметрам
2SC537 даташит
0.1. Size:155K toshiba
2sc5376fv.pdf 
2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low Collector Saturation Voltage VCE (sat) (1) = 15 mV (typ.) 1.2 0.05 @IC = 10 mA/IB = 0.5 mA 0.8 0.05 High Collector Current IC = 400 mA (max) 1 2 3 Absolute Maximum Ratings (Ta = 25 C)
0.2. Size:145K toshiba
2sc5376f.pdf 
2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low Collector Saturation Voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High Collector Current I = 400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating
0.4. Size:260K toshiba
2sc5376.pdf 
2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low collector saturation voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High collector current I = 400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Un
0.5. Size:122K sanyo
2sc5375.pdf 
Ordering number EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain S21e =10dB typ (f=1GHz). unit mm High cutoff frequency fT=5.2GHz typ. 2059B [2SC5375] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2 Emitter 3 Collector SANYO MCP
0.6. Size:56K sanyo
2sc5374a.pdf 
Ordering number ENA1090 2SC5374A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, 2SC5374A High-Frequency Amplifier Applications Features High gain S21e 2=10.5dB typ (f=1GHz). High cut-off frequency fT=5.2GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-B
0.7. Size:122K sanyo
2sc5374.pdf 
Ordering number EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain S21e =10.5dB typ (f=1GHz). unit mm High cutoff frequency fT=5.2GHz typ. 2106A [2SC5374] 0.75 0.3 0.6 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 Base 2 Emitter 3 Collector SANYO SMCP Spec
0.8. Size:408K onsemi
2sc5374a.pdf 
Ordering number ENA1090A 2SC5374A RF Transistor http //onsemi.com 10V, 100mA, fT=5.2GHz, NPN Single SMCP Features High gain 2 S21e =10.5dB typ (f=1GHz) High cut-off frequency fT=5.2GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emit
0.9. Size:35K panasonic
2sc5378 e.pdf 
Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Rating
0.10. Size:31K panasonic
2sc5378.pdf 
Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Rating
0.11. Size:40K panasonic
2sc5379.pdf 
Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25 C) 0.2 0.1 Par
0.12. Size:44K panasonic
2sc5379 e.pdf 
Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25 C) 0.2 0.1 Par
0.13. Size:12K sanken-ele
2sc5370.pdf 
2SC5370 Silicon NPN Epitaxial Planar Transistor Application Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC5370 Symbol Conditions 2SC5370 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 60 ICBO VCB=60V 10max A V VCEO 40 IEBO VEB=7V 10max A V VEBO 7 V(BR)CEO
0.14. Size:412K blue-rocket-elect
2sc5371.pdf 
2SC5371(BR3DA5371F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV
Другие транзисторы: 2SC534, 2SC535, 2SC535P, 2SC536, 2SC536KNP, 2SC536NP, 2SC536P, 2SC536SP, S8050, 2SC5370O, 2SC5370R, 2SC5370Y, 2SC537P, 2SC538, 2SC538A, 2SC539, 2SC539Z
