2SC537 Specs and Replacement
Type Designator: 2SC537
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 115 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2SC537 datasheet
0.1. Size:155K toshiba
2sc5376fv.pdf 
2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low Collector Saturation Voltage VCE (sat) (1) = 15 mV (typ.) 1.2 0.05 @IC = 10 mA/IB = 0.5 mA 0.8 0.05 High Collector Current IC = 400 mA (max) 1 2 3 Absolute Maximum Ratings (Ta = 25 C) ... See More ⇒
0.2. Size:145K toshiba
2sc5376f.pdf
2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low Collector Saturation Voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High Collector Current I = 400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating ... See More ⇒
0.4. Size:260K toshiba
2sc5376.pdf
2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low collector saturation voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High collector current I = 400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Un... See More ⇒
0.5. Size:122K sanyo
2sc5375.pdf
Ordering number EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain S21e =10dB typ (f=1GHz). unit mm High cutoff frequency fT=5.2GHz typ. 2059B [2SC5375] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2 Emitter 3 Collector SANYO MCP... See More ⇒
0.6. Size:56K sanyo
2sc5374a.pdf
Ordering number ENA1090 2SC5374A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, 2SC5374A High-Frequency Amplifier Applications Features High gain S21e 2=10.5dB typ (f=1GHz). High cut-off frequency fT=5.2GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-B... See More ⇒
0.7. Size:122K sanyo
2sc5374.pdf
Ordering number EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain S21e =10.5dB typ (f=1GHz). unit mm High cutoff frequency fT=5.2GHz typ. 2106A [2SC5374] 0.75 0.3 0.6 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 Base 2 Emitter 3 Collector SANYO SMCP Spec... See More ⇒
0.8. Size:408K onsemi
2sc5374a.pdf
Ordering number ENA1090A 2SC5374A RF Transistor http //onsemi.com 10V, 100mA, fT=5.2GHz, NPN Single SMCP Features High gain 2 S21e =10.5dB typ (f=1GHz) High cut-off frequency fT=5.2GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emit... See More ⇒
0.9. Size:35K panasonic
2sc5378 e.pdf
Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Rating... See More ⇒
0.10. Size:31K panasonic
2sc5378.pdf
Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Rating... See More ⇒
0.11. Size:40K panasonic
2sc5379.pdf
Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25 C) 0.2 0.1 Par... See More ⇒
0.12. Size:44K panasonic
2sc5379 e.pdf
Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25 C) 0.2 0.1 Par... See More ⇒
0.13. Size:12K sanken-ele
2sc5370.pdf
2SC5370 Silicon NPN Epitaxial Planar Transistor Application Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC5370 Symbol Conditions 2SC5370 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 60 ICBO VCB=60V 10max A V VCEO 40 IEBO VEB=7V 10max A V VEBO 7 V(BR)CEO... See More ⇒
0.14. Size:412K blue-rocket-elect
2sc5371.pdf
2SC5371(BR3DA5371F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV ... See More ⇒
Detailed specifications: 2SC534, 2SC535, 2SC535P, 2SC536, 2SC536KNP, 2SC536NP, 2SC536P, 2SC536SP, S8050, 2SC5370O, 2SC5370R, 2SC5370Y, 2SC537P, 2SC538, 2SC538A, 2SC539, 2SC539Z
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