2SC568 - Даташиты. Аналоги. Основные параметры

Ordering number ENN6653A 2SC5683 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5683] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2

Ordering number ENN6654A 2SC5689 NPN Triple Diffused Planar Silicon Transistor 2SC5689 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5689] Adoption of MBIT process. 5.6 3.4 On-chip damper di

Ordering number ENN6608A 2SC5682 NPN Triple Diffused Planar Silicon Transistor 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5682] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1

Ordering number ENN6652A 2SC5680 NPN Triple Diffused Planar Silicon Transistor 2SC5680 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5680] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2

Ordering number ENN6607A 2SC5681 NPN Triple Diffused Planar Silicon Transistor 2SC5681 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5681] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1

Power Transistors 2SC5686 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 2 000 V High-speed switching tf

isc Silicon NPN Power Transistor 2SC5689 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO