2SC60 datasheet, аналоги, основные параметры
Наименование производителя: 2SC60
Тип материала: Ge
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4 MHz
Ёмкость коллекторного перехода (Cc): 25 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO1
Аналоги (замена) для 2SC60
- подборⓘ биполярного транзистора по параметрам
2SC60 даташит
2sc6077.pdf
2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-ba
2sc6026.pdf
2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit mm High voltage and high current VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120 400 Complementary to 2SA2154 1 3 Absolute Maximum Ratings (Ta = 25 C) 2
2sc6034.pdf
2SC6034 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6034 High-Speed, High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High-speed switching tf = 0.24 s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage
2sc6075.pdf
2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160
2sc6000.pdf
2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation VCE (sat) = 0.18 V (max) High speed switching tf = 13 ns (typ) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collect
2sc6076.pdf
2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitt
2sc6079.pdf
2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VC
2sc6026mfv.pdf
2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 to 400 1 Complementary to 2SA2154MFV 3 2
2sc6061.pdf
2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications Unit mm DC-DC Converter Applications +0.2 2.8-0.3 +0.2 1.6-0.1 High-DC current gain hFE = 120 to 300 (IC = 0.1 A) Low-collector-emitter saturation VCE (sat) = 0.14 V (max) 1 High-speed switching tf = 0.2 s (typ) 3 2 Absolute Maximum Ratings (Ta = 25 C)
2sc6078.pdf
2SC6078 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6078 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V
2sc6052.pdf
2SC6052 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6052 High-Speed Switching Applications Unit mm Power Amplifier Applications High DC current gain hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.20 V (max.) High-speed switching tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collec
2sc6026ct.pdf
2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications Unit mm 0.6 0.05 High voltage and high current 0.5 0.03 VCEO = 50V, IC = 100mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 Complementary to 2SA2154CT Absolut
2sc6042.pdf
2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High-speed switching tf = 0.2 s (max) (IC = 0.3A) High breakdown voltage VCES = 800 V, VCEO = 375 V Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Colle
2sc6067.pdf
2SC6067 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC6067 Medium Power Amplifier Applications Unit mm Strobe Flash Applications Low Saturation Voltage VCE (sat) = 0.3 V (max) (@ IC=3A / IB=60mA Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-Base voltage V 15 V CBO Collector-Emitter voltage V 10 V CEO Emitt
2sc6062.pdf
2SC6062 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6062 High-Speed Switching Applications Unit mm DC-DC Converter Applications +0.2 2.8-0.3 Strobe Applications +0.2 1.6-0.1 High-DC current gain hFE = 250 to 400 (IC = 0.5 1 A)Low-collector-emitter saturation VCE (sat) = 0.12 V (max) High-speed switching tf = 25 ns (typ.) 3 2 Absolute Maximum Ratings (Ta
2sc6010.pdf
2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tf = 0.24 s (max) (IC = 0.3A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEX 600 V
2sc6033.pdf
2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit mm High-Speed Swtching Applications +0.2 2.8-0.3 DC-DC Converter Applications +0.2 1.6-0.1 Storobe Flash Applications 1 High DC current gain hFE = 250 to 400 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.18 V (max) 3 2 High-speed switching tf = 38 ns (typ.
2sc6040.pdf
2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High-speed switching tf = 0.2 s (max) (IC = 0.3 A) High breakdown voltage VCES = 800 V, VCEO = 410 V Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit C
2sc6060.pdf
2SC6060 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6060 Unit mm Power Amplifier Applications Driver Stage Amplifier Applications High-transition frequency fT = 100 MHz (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V DC IC 1.0 A Collec
2sc6087.pdf
2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCEX 160 V Colle
2sc6026mfv-y 2sc6026mfv-gr.pdf
2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 to 400 1 Complementary to 2SA2154MFV 3 2
2sc6013.pdf
Ordering number EN8556 2SC6013 NPN Epitaxial Planar Silicon Transistor 2SC6013 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation.
2sc6092ls.pdf
Ordering number ENA0834 2SC6092LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6092LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symb
2sc6099.pdf
Ordering number ENA0435 2SC6099 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6099 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch
2sc6089.pdf
Ordering number ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol C
2sc6090ls.pdf
Ordering number ENA0996 2SC6090LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6090LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symb
2sa2169 2sc6017.pdf
Ordering number ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching 2SA2169 / 2SC6017 Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) 2SA2169 Abs
2sc6043.pdf
Ordering number ENN8326 2SC6043 NPN Epitaxial Planar Silicon Transistors 2SC6043 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ra
2sc6097.pdf
Ordering number ENA0412 2SC6097 NPN Epitaxial Planar Silicon Transistor 2SC6097 High-Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis
2sc6098.pdf
Ordering number ENA0413 2SC6098 NPN Epitaxial Planar Silicon Transistor 2SC6098 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis
2sc6082.pdf
Ordering number ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Ap- 2SC6082 plications Applications High-speed switching applications (switching regulator, driver circuit). Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed
2sc6093.pdf
Ordering number ENA0274 2SC6093LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6093LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Specifications Absolute Maximum Rating
2sc6044.pdf
Ordering number ENN8251 2SC6044 NPN Epitaxial Planar Silicon Transistors 2SC6044 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching. Specifications Absolute Maximum Ratin
2sc6023.pdf
Ordering number ENN8143 2SC6023 NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier 2SC6023 and OSC Applications Features Low-noise use NF=1.2dB typ (f=2GHz). High cut-off frequency fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). Low operating voltage. High gain S21e 2=14dB typ (f=2GHz). Specifications Absolute Maximum Ratings at
2sc6096.pdf
Ordering number ENA0434 2SC6096 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6096 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch
2sc6024.pdf
Ordering number ENN8290 2SC6024 NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier 2SC6024 and OSC Applications Features Low-noise use NF=1.2dB typ (f=2GHz). High cut-off frequency fT=14GHz typ (VCE=1V). fT=21GHz typ (VCE=3V). Low operating voltage. High gain S21e 2=12.5dB typ (f=2GHz). Ultraminiature and thin flat leadless pa
2sc6095.pdf
2SC6095 Ordering number ENA0411A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6095 High-Voltage Switching Applications Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switchin
2sc6099-e 2sc6099.pdf
Ordering number ENA0435A 2SC6099 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss
2sc6099.pdf
Ordering number ENA0435A 2SC6099 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss
2sa2169 2sc6017.pdf
Ordering number EN8275A 2SA2169/2SC6017 Bipolar Transistor http //onsemi.com (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching ( ) 2SA2169 Specifications Absolute Maximum R
2sc6097.pdf
Ordering number ENA0412A 2SC6097 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi
2sc6098.pdf
Ordering number ENA0413A 2SC6098 Bipolar Transistor http //onsemi.com ( ) 80V, 2.5A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis
2sc6017-e 2sc6017.pdf
Ordering number EN8275A 2SA2169/2SC6017 Bipolar Transistor http //onsemi.com (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching ( ) 2SA2169 Specifications Absolute Maximum R
2sc6082.pdf
Ordering number ENA0279B 2SC6082 Bipolar Transistor http //onsemi.com ( ) 50V, 15A, Low VCE sat NPN TO-220F-3SG Applications High-speed switching applications (switching regulator, driver circuit) Features Adoption of MBIT process Large current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratin
2sc6096 2sc6096-td-h.pdf
Ordering number ENA0434A 2SC6096 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati
2sc6097-e 2sc6097.pdf
Ordering number ENA0412A 2SC6097 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi
2sc6096.pdf
Ordering number ENA0434A 2SC6096 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati
2sc6094.pdf
Ordering number ENA0410A 2SC6094 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipatio
2sc6095.pdf
Ordering number ENA0411A 2SC6095 Bipolar Transistor http //onsemi.com ( ) 80V, 2.5A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipat
2sc6098-e 2sc6098.pdf
Ordering number ENA0413A 2SC6098 Bipolar Transistor http //onsemi.com ( ) 80V, 2.5A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis
2sc6036.pdf
Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Unit mm Complementary to 2SA2162 0.33+0.05 0.10+0.05 -0.02 -0.02 Features 3 Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.23+0.05 1 2 -0.02 (0.40)(0.40) 0.80 0.05 Ab
2sc6012.pdf
Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 5 Wide safe oeration area (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings TC = 25
2sc6046.pdf
2SC6046 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Unit mm OUTLINE DRAWING 2SC6046 is a silicon NPN epitaxial type transistor designed with high collector current, low VCE sat . 2.8 0.65 1.5 0.65 FEATURE High collector current IC MAX =600mA Low collector to emitter saturation voltage VCE sa
2sc6053.pdf
SMALL-SIGNAL TRANSISTOR 2SC6053 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit 2SC6053 is a mini package resin sealed silicon NPN epitaxial type transistor designed with high collector current, small VCE(sat). 2.5 . 1.5 0.5 0.5 FEATURE Super mini package for easy mounting High col
2sc6011a.pdf
2-1 Transistors Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic (V) (V) (A) (W) ( A) (V) min max (V) (A) 2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SC2921 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SC2922 Audio, general-purpose 180 180 17 200 100 180 30 180 4 8 2SC3263 Audio, gener
2sc6090.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6090 DESCRIPTION Collector-Base Breakdown Voltage- V = 1500V (Min) (BR)CEO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )
2sc6011a.pdf
isc Silicon NPN Power Transistor 2SC6011A DESCRIPTION High Power Handling capacity High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA2151A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage
2sc6017.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6017 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA2169 APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
2sc6011.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA2151 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE
2sc6082 .pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6082 DESCRIPTION Large current capacitance High speed switching Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CB
2sc6011 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A Good Linearity of hFE Complement to Type 2SA2151/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE
2sc6098.pdf
isc Silicon NPN Power Transistor 2SC6098 DESCRIPTION Large current capacitance High-speed switching High allowable power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc6082.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6082 DESCRIPTION Large current capacitance High speed switching Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CB
2sc6093.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6093 DESCRIPTION Low saturation voltage Built-in damper diode type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
2sc6011 2sc6011a.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min)-2SC6011 (BR)CEO = 200V(Min)-2SC6011A Good Linearity of h FE Complement to Type 2SA2151/A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general pu
Другие транзисторы: 2SC596, 2SC596N, 2SC597, 2SC597N, 2SC598, 2SC598N, 2SC599, 2SC599N, 2SA1943, 2SC600, 2SC600N, 2SC601, 2SC601N, 2SC602, 2SC602N, 2SC603, 2SC604
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