2SC60 Datasheet and Replacement

2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-ba

2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120~400 : Complementary to 2SA2154 13Absolute Maximum Ratings (Ta = 25C) 2

2SC6034 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6034 High-Speed, High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.24 s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltage

2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160

2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications Unit: mmDC-DC Converter Applications High DC current gain: hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High speed switching: tf = 13 ns (typ) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollect

2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit: mmPower Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitt

2SC6072 NPN 2SC6072 : mm :fT=200MHz() (Ta = 25C) VCBO V 180

2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Unit: mmPower Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage VC

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32

2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications Unit: mmDC-DC Converter Applications +0.2 2.8-0.3 +0.2 1.6-0.1 High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) 1 High-speed switching: tf = 0.2 s (typ) 32 Absolute Maximum Ratings (Ta = 25C)

2SC6078 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6078 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 V

2SC6052 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6052 High-Speed Switching Applications Unit: mmPower Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.20 V (max.) High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollec

2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications Unit: mm0.60.05 High voltage and high current 0.50.03: VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 : Complementary to 2SA2154CT Absolut

2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.2 s (max) (IC = 0.3A) High breakdown voltage: VCES = 800 V, VCEO = 375 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitColle

2SC6067 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC6067 Medium Power Amplifier Applications Unit: mm Strobe Flash Applications Low Saturation Voltage: VCE (sat) = 0.3 V (max) (@ IC=3A / IB=60mA Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-Base voltage V 15 VCBO Collector-Emitter voltage V 10 VCEO Emitt

2SC6062 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6062 High-Speed Switching Applications Unit: mmDC-DC Converter Applications +0.2 2.8-0.3 Strobe Applications +0.2 1.6-0.1 High-DC current gain: hFE = 250 to 400 (IC = 0.5 1 A)Low-collector-emitter saturation: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) 32 Absolute Maximum Ratings (Ta

2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High speed switching: tf = 0.24s (max) (IC = 0.3A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltage VCEX 600 V

2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mmHigh-Speed Swtching Applications +0.2 2.8-0.3 DC-DC Converter Applications +0.2 1.6-0.1 Storobe Flash Applications 1 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) 3 2 High-speed switching: tf = 38 ns (typ.

2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.2 s (max) (IC = 0.3 A) High breakdown voltage: VCES = 800 V, VCEO = 410 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitC

2SC6060 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6060 Unit: mmPower Amplifier Applications Driver Stage Amplifier Applications High-transition frequency: fT = 100 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter voltage VCEO 230 VEmitter-base voltage VEBO 5 VDC IC 1.0 ACollec

2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VVCEX 160 VColle

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32

Ordering number : EN8556 2SC6013NPN Epitaxial Planar Silicon Transistor2SC6013DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation.

Ordering number : ENA0834 2SC6092LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6092LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symb

Ordering number : ENA0435 2SC6099SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6099High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch

Ordering number : ENA0995 2SC6089SANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6089Output ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol C

Ordering number : ENA0996 2SC6090LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6090LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symb

Ordering number : ENN82752SA2169 / 2SC6017PNP / NPN Epitaxial Planar Silicon TransistorsHigh-Current Switching2SA2169 / 2SC6017ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Specifications ( ) : 2SA2169Abs

Ordering number : ENN8326 2SC6043NPN Epitaxial Planar Silicon Transistors2SC6043High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maximum Ra

Ordering number : ENA0412 2SC6097NPN Epitaxial Planar Silicon Transistor2SC6097High-Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis

Ordering number : ENA0413 2SC6098NPN Epitaxial Planar Silicon Transistor2SC6098High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis

Ordering number : ENA0279 2SC6082SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor50V / 15A High-Speed Switching Ap-2SC6082plicationsApplications High-speed switching applications (switching regulator, driver circuit).Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed

Ordering number : ENA0274 2SC6093LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6093LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.SpecificationsAbsolute Maximum Rating

Ordering number : ENN8251 2SC6044NPN Epitaxial Planar Silicon Transistors2SC6044High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching.SpecificationsAbsolute Maximum Ratin

Ordering number : ENN8143 2SC6023NPN Epitaxial Planar Silicon TransistorUHF to C Band Low-Noise Amplifier2SC6023and OSC ApplicationsFeatures Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14.5GHz typ (VCE=1V).: fT=22GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=14dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratings at

Ordering number : ENA0434 2SC6096SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6096High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch

Ordering number : ENN8290 2SC6024NPN Epitaxial Planar Silicon TransistorUHF to C Band Low-Noise Amplifier2SC6024and OSC ApplicationsFeatures Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14GHz typ (VCE=1V).: fT=21GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=12.5dB typ (f=2GHz). Ultraminiature and thin flat leadless pa

2SC6094 No. NA0410 NN N 2SC6094

2SC6095Ordering number : ENA0411ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6095High-Voltage Switching ApplicationsApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switchin

Ordering number : ENA0435A2SC6099Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss

Ordering number : ENA0435A2SC6099Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss

Ordering number : EN8275A2SA2169/2SC6017Bipolar Transistorhttp://onsemi.com(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching( ): 2SA2169Specifications Absolute Maximum R

Ordering number : ENA0412A2SC6097Bipolar Transistorhttp://onsemi.com( )60V, 3A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi

Ordering number : ENA0413A2SC6098Bipolar Transistorhttp://onsemi.com( )80V, 2.5A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis

Ordering number : EN8275A2SA2169/2SC6017Bipolar Transistorhttp://onsemi.com(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching( ): 2SA2169Specifications Absolute Maximum R

Ordering number : ENA0279B2SC6082Bipolar Transistorhttp://onsemi.com( )50V, 15A, Low VCE sat NPN TO-220F-3SGApplications High-speed switching applications (switching regulator, driver circuit)Features Adoption of MBIT process Large current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratin

Ordering number : ENA0434A2SC6096Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati

Ordering number : ENA0412A2SC6097Bipolar Transistorhttp://onsemi.com( )60V, 3A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi

Ordering number : ENA0434A2SC6096Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati

Ordering number : ENA0410A2SC6094Bipolar Transistorhttp://onsemi.com( )60V, 3A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipatio

Ordering number : ENA0411A2SC6095Bipolar Transistorhttp://onsemi.com( )80V, 2.5A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipat

Ordering number : ENA0413A2SC6098Bipolar Transistorhttp://onsemi.com( )80V, 2.5A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis

Transistors 2SC6036Silicon NPN epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SA21620.33+0.05 0.10+0.05-0.02 -0.02 Features3 Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing0.23+0.05 1 2-0.02(0.40)(0.40)0.800.05 Ab

Power Transistors2SC6012Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage, and high reliability through the use of aglass passivation layer High-speed switching 55 Wide safe oeration area(4.0)52.00.21.10.1 Absolute Maximum Ratings TC = 25

2SC6046FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION UnitmmOUTLINE DRAWING 2SC6046 is a silicon NPN epitaxial type transistor designed with high collector current, low VCEsat. 2.8 0.65 1.5 0.65FEATURE High collector current ICMAX=600mA Low collector to emitter saturation voltage VCEsa

SMALL-SIGNAL TRANSISTOR 2SC6053 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit 2SC6053 is a mini package resin sealed silicon NPN epitaxial type transistor designed with high collector current, small VCE(sat). 2.5 . 1.50.5 0.5 FEATURE Super mini package for easy mounting High col

2-1 TransistorsAbsolute Maximum RatingsICBO hFEVCBO VCEO Ic PcConditions ConditionsPart Number ApplicationsVCB VCE Ic(V) (V) (A) (W) ( A)(V) min max(V) (A)2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 32SC2921 Audio, general-purpose 160 160 15 150 100 160 50 180 4 52SC2922 Audio, general-purpose 180 180 17 200 100 180 30 180 4 82SC3263 Audio, gener

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6090DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1500V (Min)(BR)CEOHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Color TV horizontal deflection outputapplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)

isc Silicon NPN Power Transistor 2SC6076DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V =0.5V(Max) @I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower Amplifier ApplicationsPower Switching ApplicationsABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6099DESCRIPTIONLarge current capacitanceHigh-speed switchingHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,relay drivers,lamp drivers,motor drivers,inverterABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC6011ADESCRIPTIONHigh Power Handling capacityHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA2151AMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifieroutput stage

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6017DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SA2169APPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6011DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA2151100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6082DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCB

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A Good Linearity of hFE Complement to Type 2SA2151/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6097DESCRIPTIONLarge current capacitanceHigh-speed switchingHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,relay drivers,lamp drivers,motor drivers,inverterABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC6098DESCRIPTIONLarge current capacitanceHigh-speed switchingHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,relay drivers,lamp drivers,motor drivers,inverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6082DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6093DESCRIPTIONLow saturation voltageBuilt-in damper diode type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage color display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6011/ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)-2SC6011(BR)CEO= 200V(Min)-2SC6011AGood Linearity of hFEComplement to Type 2SA2151/A100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general pu