Справочник транзисторов. 2SC941TMR

 

Биполярный транзистор 2SC941TMR - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC941TMR

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.4 W

Макcимально допустимое напряжение коллектор-база (Ucb): 35 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 35 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 125 °C

Граничная частота коэффициента передачи тока (ft): 80 MHz

Ёмкость коллекторного перехода (Cc): 3 pf

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO92

Аналоги (замена) для 2SC941TMR

 

 

2SC941TMR Datasheet (PDF)

6.1. 2sc941tm.pdf Size:249K _toshiba

2SC941TMR 2SC941TMR

2SC941TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC941TM High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter

8.1. 2sc941.pdf Size:229K _toshiba

2SC941TMR 2SC941TMR

 9.1. 2sc945.pdf Size:73K _nec

2SC941TMR

9.2. 2sc945-y.pdf Size:244K _mcc

2SC941TMR 2SC941TMR

MCC2SC945-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC945-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15APlastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150OC

 9.3. 2sc945-gr.pdf Size:244K _mcc

2SC941TMR 2SC941TMR

MCC2SC945-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC945-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15APlastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150OC

9.4. 2sc945.pdf Size:180K _utc

2SC941TMR 2SC941TMR

UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage: BVCBO=50V * Collector current up to 150mA * High hFE linearity Lead-free: 2SC945L * Complimentary to UTC 2SA733

 9.5. 2sc947.pdf Size:43K _no

2SC941TMR

9.6. 2sc943.pdf Size:46K _no

2SC941TMR

9.7. 2sc940.pdf Size:42K _no

2SC941TMR

9.8. 2sc945.pdf Size:226K _no

2SC941TMR 2SC941TMR

ST 2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurati

9.9. 2sc940.pdf Size:151K _jmnic

2SC941TMR 2SC941TMR

JMnic Product Specification Silicon NPN Power Transistors 2SC940 DESCRIPTION With TO-3 package High current capability Wide area of safe operation APPLICATIONS For B/W TV horizontal deflection application PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETE

9.10. 2sc945.pdf Size:272K _shenzhen

2SC941TMR 2SC941TMR

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC945 TRANSISTOR (NPN) FEATURE 1. BASE Excellent hFE Linearity2. EMITTER Low noise 3. COLLECTOR Complementary to A733 MARKING:CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emi

9.11. 2sc945m.pdf Size:1517K _blue-rocket-elect

2SC941TMR 2SC941TMR

2SC945M(BR3DG945M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,High voltage, excellent hFE linearity. / Applications General power amplifier application and low speed switching.

9.12. 2sc945lt1.pdf Size:634K _china

2SC941TMR 2SC941TMR

SEMICONDUCTOR 2SC945LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Collector Current: Ic= 150mA * Collector-Emitter Voltage:Vce= 50V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V

9.13. 2sc945.pdf Size:781K _kexin

2SC941TMR 2SC941TMR

SMD TypeSMD Type si o orsSMD Type TranDistdesNPN Transistors2SC945SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector current up to 150mA High hFE linearity1 2 Complementary to 2SA733+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector

9.14. 2sc940.pdf Size:191K _inchange_semiconductor

2SC941TMR 2SC941TMR

isc Silicon NPN Power Transistor 2SC940DESCRIPTIONHigh Breakdown Voltage-: V = 90V(Min)CEOWide Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection output applications.Suitable for horizontal output applications in 12~24 inch B/WTV, and switching applications of 5

9.15. 2sc945.pdf Size:189K _inchange_semiconductor

2SC941TMR 2SC941TMR

isc Silicon NPN Transistor 2SC945DESCRIPTIONHigh VoltageExcellent h linearityFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDsigned for use in driver stage of AF amplifierand low speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Vol

Другие транзисторы... 2SC939 , 2SC94 , 2SC940 , 2SC941 , 2SC941O , 2SC941R , 2SC941TM , 2SC941TMO , 2SD1047 , 2SC941TMY , 2SC941Y , 2SC942 , 2SC943 , 2SC944 , 2SC944S , 2SC945 , 2SC945L .

 

 
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