2SD1189 datasheet, аналоги, основные параметры
Наименование производителя: 2SD1189
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: TO247
Аналоги (замена) для 2SD1189
- подборⓘ биполярного транзистора по параметрам
2SD1189 даташит
8.3. Size:202K inchange semiconductor
2sd1186.pdf 
isc Silicon NPN Power Transistor 2SD1186 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitte
8.4. Size:183K inchange semiconductor
2sd1180.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1180 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 110V (Min) (BR)CEO Low collector saturation voltage With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio and radio frequency power amplifiers applications. ABSOL
8.5. Size:198K inchange semiconductor
2sd1184.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1184 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
8.6. Size:199K inchange semiconductor
2sd1187.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1187 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Collector-Emitter Saturation Voltage- V = 0.5V(Max.)@ I = 6.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications DC-DC
8.7. Size:202K inchange semiconductor
2sd1185.pdf 
isc Silicon NPN Power Transistor 2SD1185 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitte
8.8. Size:198K inchange semiconductor
2sd1183.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1183 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Reliability Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
Другие транзисторы: 2SD1183, 2SD1184, 2SD1185, 2SD1186, 2SD1187, 2SD1187O, 2SD1187Y, 2SD1188, BC557, 2SD119, 2SD1190, 2SD1191, 2SD1192, 2SD1193, 2SD1194, 2SD1195, 2SD1196
