2SD1189 Datasheet and Replacement
Type Designator: 2SD1189
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector Current |Ic max|: 2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 100
MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
TO247
-
BJT ⓘ Cross-Reference Search
2SD1189 Datasheet (PDF)
8.3. Size:202K inchange semiconductor
2sd1186.pdf 
isc Silicon NPN Power Transistor 2SD1186DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitte
8.4. Size:183K inchange semiconductor
2sd1180.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1180DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOLow collector saturation voltageWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio and radio frequency power amplifiersapplications.ABSOL
8.5. Size:198K inchange semiconductor
2sd1184.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1184DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
8.6. Size:199K inchange semiconductor
2sd1187.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1187DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFECollector-Emitter Saturation Voltage-: V = 0.5V(Max.)@ I = 6.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsDC-DC
8.7. Size:202K inchange semiconductor
2sd1185.pdf
isc Silicon NPN Power Transistor 2SD1185DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitte
8.8. Size:198K inchange semiconductor
2sd1183.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1183DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2SD1183
, 2SD1184
, 2SD1185
, 2SD1186
, 2SD1187
, 2SD1187O
, 2SD1187Y
, 2SD1188
, TIP122
, 2SD119
, 2SD1190
, 2SD1191
, 2SD1192
, 2SD1193
, 2SD1194
, 2SD1195
, 2SD1196
.
Keywords - 2SD1189 transistor datasheet
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