Transistor2SD1205, 2SD1205ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 2000.A shunt resistor is omitted from the driver.0.85M type package all

2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1222 Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 2 A) CE (sat) C Complementary to 2SB907. Maximum Ratings (T

2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1220 Power Amplifier Applications Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-emitter voltage VCEO 150 VEmitter-base voltage VEBO 6 VCollector current IC 1.5 ABase current IB 1.0 ATa = 25C 1.0 Col

2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Cha

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Complementary to 2SB908. Absolute Maximum Ratings

2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process) 2SD1221 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : V = 4.0 V (typ.) (I = 3 A, I = 0.3 A) CE (sat) C B High power dissipation: P = 20 W (Tc = 25C) C Complementary to 2SB906 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-b

Ordering number:1030EPNP/NPN Epitaxial Planar Silicon Transistors2SB926/2SD1246Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2003A[2SB926/2SD1246]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.JEDEC : TO-92 B

Ordering number:990CPNP/NPN Epitaxial Planar Silicon Transistors2SB903/2SD121230V/12A High-Speed Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general large-current switching2010Capplications.[2SB903/2SD1212]Features Low collector-to-emitter saturation voltage : VCE(sat)=()0.

Ordering number:1034BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB913/2SD1230Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2022A[2SB913/2SD1230]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.1 : Base2 : Colle

Ordering number:1022APNP/NPN Epitaxial Planar Silicon Transistors2SB904/2SD121330V/12A High-Speed Switching ApplicationsApplications Package Dimensions Large current switching of relay drivers, high-speedunit:mminverters, converters.2022A[2SB904/2SD1213]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Large current

Ordering number : EN930D2SB892 / 2SD1207SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB892 / 2SD1207Large-Current Switching ApplicationsApplications Power supplies, relay drivers, lamp drivers, and automotive wiring.Features FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and

Ordering number:1046BPNP/NPN Epitaxial Planar Silicon Transistors2SB919/2SD123530V/8A High-Speed Switching ApplicationsApplications Package Dimensions Large current switching of relay drivers, high-speedunit:mminverters, converters.2010C[2SB919/2SD1235]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Large current

Ordering number:1798APNP/NPN Epitaxial Planar Silicon Transistors2SB922L/2SD1238L80V/12A Switching ApplicationsApplications Package Dimensions Suittable for relay drivers, high-speed inverters,unit:mmconverters, and other large-current switching appli-2022Acations.[2SB922L/2SD1238L]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4

Ordering number:1028BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB912/2SD1229Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage reguraltor control.2022A[2SB912/2SD1229]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.1 : Base2 : Coll

Ordering number:1029CPNP/NPN Epitaxial Planar Silicon Transistors2SB927/2SD1247Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2006A[2SB927/2SD1247]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.( ) : 2SB927 EIA

Ordering number:1797BPNP/NPN Epitaxial Planar Silicon Transistors2SB921L/2SD1237L80V/7A Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other genral large current switching2010Capplications.[2SB921L/2SD1237L]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP),

Ordering number:1796BPNP/NPN Epitaxial Planar Silicon Transistors2SB920L/2SD1236L80V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2010C[2SB920L/2SD1236L]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max

2SB1189 / 2SB1238 / 2SB899FTransistorsTransistors2SD1767 / 2SD1859 / 2SD1200F(96-618-B13)(96-750-D13)278

Power Transistors2SD1258Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification with high forward current transfer ratio6.0 0.5 1.0 0.1Features1.5max. 1.1max.High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE0.8 0.1 0.5max.N type package enabling direct soldering of the radiating fin

Power Transistors2SD1272Silicon NPN triple diffusion planar typeFor high-speed switching and high current amplification ratioUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh foward current transfer ratio hFE 3.1 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat sink withone screw1.3 0.2

Transistor2SD1244Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.M type package allowing easy automatic and manual insertion as0.85well as stand-alone

Power Transistors2SD1256Silicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power switching6.0 0.5 1.0 0.1Complementary to 2SB933Features1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFE0.8 0.1 0.5max.Large collector current IC2.54 0.3N type package enabling direct sold

Power Transistors2SD1273, 2SD1273ASilicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mmComplementary to 2SB129910.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh foward current transfer ratio hFE 3.1 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the

Power Transistors2SD1269Silicon NPN epitaxial planar typeFor power switchingUnit: mmComplementary to 2SB94410.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and

Power Transistors2SD1276, 2SD1276ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Complementary to 2SB950 and 2SB950AFeaturesHigh foward current transfer ratio hFE 3.1 0.1High-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute

Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and

Power Transistors2SD1274, 2SD1274A, 2SD1274BSilicon NPN triple diffusion planar typeFor power amplificationUnit: mmFeatures 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with 3.1 0.1one screwAbsolute Maximum Ratings (TC=25C)1.3 0.2Parameter Symbol Ra

Transistor2SD1205, 2SD1205ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 2000.A shunt resistor is omitted from the driver.0.85M type package all

Power Transistors2SD1271, 2SD1271ASilicon NPN epitaxial planar typeFor power switchingComplementary to 2SB946 and 2SB946A Unit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFE 3.1 0.1Large collector current ICFull-pack package which can be installed to the

Power Transistors2SD1268Silicon NPN epitaxial planar typeFor power switchingUnit: mmComplementary to 2SB94310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

Power Transistors2SD1264, 2SD1264ASilicon NPN triple diffusion planar typeFor low-freauency power amplificationUnit: mmFor TV vertical deflection output10.0 0.2 4.2 0.2Complementary to 2SB940 and 2SB940A5.5 0.2 2.7 0.2Features 3.1 0.1High collector to emitter VCEOLarge collector power dissipation PCFull-pack package which can be installed to the heat sink w

Power Transistors2SD1262, 2SD1262ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor midium speed power switching 8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB939 and 2SB939AFeaturesHigh foward current transfer ratio hFE1.5max. 1.1max.High-speed switching0.8 0.1 0.5max.N type package enabling direct soldering of the radiating fin tothe printe

Power Transistors2SD1277, 2SD1277ASilicon NPN triple diffusion planar type DarlingtonFor midium speed power switchingUnit: mm10.0 0.2 4.2 0.2Complementary to 2SB951 and 2SB951A5.5 0.2 2.7 0.2Features High foward current transfer ratio hFE 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0

Power Transistors2SD1254Silicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For power switching6.0 0.5 1.0 0.1Complementary to 2SB931Features1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFE0.8 0.1 0.5max.Large collector current IC2.54 0.3N type package enabling direct sold

Transistor2SD1211Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB9875.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver-stage of a low-frequency and 40 to 60Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage V

Transistor2SD1205, 2SD1205ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 2000.A shunt resistor is omitted from the driver.0.85M type package all

Power Transistors2SD1259, 2SD1259ASilicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification with high forward current transfer ratio6.0 0.5 1.0 0.1FeaturesHigh foward current transfer ratio hFE1.5max. 1.1max.Satisfactory linearity of foward current transfer ratio hFEN type package enabling direct soldering of the radiating fin to0.8

Power Transistors2SD1252, 2SD1252ASilicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1Complementary to 2SB929 and 2SB929AFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)N type package enabling direct soldering of the

Power Transistors2SD1270Silicon NPN epitaxial planar typeFor power switchingUnit: mmComplementary to 2SB94510.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

Power Transistors2SD1251, 2SD1251ASilicon NPN triple diffusion junction typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1FeaturesWide area of safe operation (ASO)1.5max. 1.1max.N type package enabling direct soldering of the radiating fin tothe printed circuit board, etc. of small electronic equipment.0.8 0.1 0.5max.Absolute Maximum Ratings (T

Transistor2SD1211Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB9875.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver-stage of a low-frequency and 40 to 60Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage V

Power Transistors2SD1253, 2SD1253ASilicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1Complementary to 2SB930 and 2SB930AFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity1.5max. 1.1max.Low collector to emitter saturation voltage VCE(sat)N type package enabling direct soldering of the

Power Transistors2SD1257, 2SD1257ASilicon NPN epitaxial planar typeUnit: mmFor power switching8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB934FeaturesLow collector to emitter saturation voltage VCE(sat)1.5max. 1.1max.Satisfactory linearity of foward current transfer ratio hFELarge collector current IC0.8 0.1 0.5max.N type package enabling direct solder

Power Transistors2SD1275, 2SD1275ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification10.0 0.2 4.2 0.2Complementary to 2SB949 and 2SB949A 5.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEHigh-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute

Power Transistors2SD1261, 2SD1261ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB938 and 2SB938AFeatures High foward current transfer ratio hFE High-speed switching1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to0.8 0.1 0.5max.the printed cir

Power Transistors2SD1260, 2SD1260ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB937 and 2SB937AFeaturesHigh foward current transfer ratio hFE1.5max. 1.1max.High-speed switchingN type package enabling direct soldering of the radiating fin to0.8 0.1 0.5max.the printed circui

Transistor2SD1244Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.M type package allowing easy automatic and manual insertion as0.85well as stand-alone

Power Transistors2SD1266, 2SD1266ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB941 and 2SB941AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity10.0 0.2 4.2 0.2Low collector to emitter saturation voltage VCE(sat)5.5 0.2 2.7 0.2Full-pack package which can be installed to the heat sink with

Power Transistors2SD1267, 2SD1267ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB942 and 2SB942AUnit: mmFeatures10.0 0.2 4.2 0.2High forward current transfer ratio hFE which has satisfactory linearity5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink with

Power Transistors2SD1263, 2SD1263ASilicon NPN triple diffusion planar typeFor power amplificationUnit: mmFeatures10.0 0.2 4.2 0.2High collector to base voltage VCBO5.5 0.2 2.7 0.2Full-pack package which can be installed to the heat sink withone screw 3.1 0.1Absolute Maximum Ratings (TC=25C)Parameter Symbol Ratings UnitCollector to 2SD1263 3501.3 0.2

2SD1209(K)Silicon NPN Epitaxial, DarlingtonApplication Low frequency power amplifier Complementary pair with 2SA1193(K)OutlineTO-92MOD231. Emitter2. Collector3. Base13212SD1209(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCo

2SD1265 NPN EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIERVERTICAL DEFLECTION OUTPUT SC-67 ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junction Tempera

Product Specification www.jmnic.com Silicon Power Transistors 2SD1294 DESCRIPTION With TO-3P(I) package Included avalanche diode High DC current gain Darlington connected type APPLICATIONS Power regulator for line operated TV PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 emitterFig.1 simplified outline (TO-3P(I)) and symbol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949,2SB949A High forward current transfer ratio hFE High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MA

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1277 2SD1277A DESCRIPTION With TO-220Fa package Complement to type 2SB951 and 2SB951A High forward current transfer ratio hFE High-speed switching APPLICATIONS For medium speed power switching PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1290 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified out

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1213 DESCRIPTION With TO-3PN package Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) Large current capacity. Complement to type 2SB904 APPLICATIONS Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN DESCRIPTION1 Base Collector;connect

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITI

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1291 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified out

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1296 DESCRIPTION With TO-3PN package High DC current gain Low saturation voltage APPLICATIONS For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) a

Power Transistors www.jmnic.com 2SD1271A Silicon NPN Transistors B C E Features For Power Switching. With TO-220Fa package Complement to type 2SB946 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V ICP Peak collector current 15 A IC Coll

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION With TO-220Fa package Complement to type 2SB950 and 2SB950A High forward current transfer ratio hFE High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUT

Product Specification www.jmnic.com2SD1297 Silicon NPN Transistors B C E Features Darlington With TO-3PFa package Low speed power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 5 V IC Collector current-Continuous 25 A

2SD1207 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,Low saturation voltage, large current capacity. / Applications ,,Power supplies, relay drivers, lamp

2SD1273(A)F(BR3DA1273(A)F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features h FEPower amplifier with high forward current transfer ratio applications. / Applications h FEHigh hFE, good linearity of hFE.

SMD Type TransistorsNPN Transistors2SD1256TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC0.127+0.10.80-0.1max Complementary to 2SB933+ 0.11 Base2.3 0.60- 0.1+0.1

SMD Type TransistorsNPN Transistors2SD1253ATO-252 Unit: mm+0.15 Features6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127+0.1 Complementary to 2SB930A0.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152

SMD Type TransistorsNPN Transistors2SD1255TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127+0.1 Large collector current IC0.80-0.1max Complementary to 2SB932+ 0.11 Base2.3

SMD Type TransistorsNPN Transistors2SD12801.70 0.1 Features Satisfactory operation performances at high efficiency with the low-voltage power supply. Low collector to emitter saturation voltage VCE(sat)0.42 0.10.46 0.1 Complementary to 2SB9561.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba

SMD Type TransistorsNPN Transistors2SD1254TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127+0.10.80-0.1 Large collector current IC max Complementary to 2SB931+ 0.11 Base2.3 0

SMD Type TransistorsNPN Transistors2SD1257ATO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3

SMD Type TransistorsNPN Transistors2SD1250TO-252Unit: mm+0.156.50-0.15 Features +0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127 Complementary to 2SB928 +0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Co

SMD Type TransistorsNPN Transistors2SD1250ATO-252Unit: mm+0.156.50-0.15 Features +0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127 Complementary to 2SB928 +0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 C

SMD Type TransistorsNPN Transistors2SD1252TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity0.127+0.1 Low collector to emitter saturation voltage VCE(sat)0.80-0.1max Complementary to 2SB929+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152

SMD Type TransistorsNPN Transistors2SD1252ATO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity0.127+0.1 Low collector to emitter saturation voltage VCE(sat)0.80-0.1max Complementary to 2SB929A+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.15

SMD Type TransistorsNPN Transistors2SD1253TO-252 Unit: mm+0.15 Features6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat)0.127+0.1 Complementary to 2SB9300.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Co

SMD Type TransistorsNPN Transistors2SD1257TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC0.127+0.1 Complementary to 2SB934 0.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.15

SMD Type TransistorsNPN Transistors2SD1221TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.1 Features5.30+0.2 0.50 +0.8-0.2-0.7 Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) High power dissipation: PC = 20 W (Tc = 25C) 0.1270.80+0.1 max-0.1 Complementary to 2SB9062.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152

SMD Type TransistorsNPN Transistors2SD1295TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High collector to emitter VCEO Large collector power dissipation PC0.127 Complementary to 2SB968+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1278DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1288DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Typ)@I = 4.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB965100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power

isc Silicon NPN Power Transistor 2SD1269DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB944Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1266ADESCRIPTIONLow Collector Saturation Voltage: V = 1.2V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB941AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE

isc Silicon NPN Darlington Power Transistor 2SD1294DESCRIPTIONIncluded Avalanche Diode-: V = 6015VZHigh DC Current Gain: h = 2000~20000@ I = 0.5A, V = 5VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower regulator for line operated TV applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor 2SD1255DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.5V(Max.)@ I = 3.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsSwitching regulatorsABSOLUT

isc Product Specificationisc Silicon NPN Power Transistor 2SD1242DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie

isc Silicon NPN Power Transistor 2SD1265DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SD1212DESCRIPTIONHigh Collector Current:: I = 12ACLow Collector Saturation Voltage: V = 0.4V(Max)@I = 5ACE(sat) CComplement to Type 2SB903Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general large-current switc

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1286-ZDESCRIPTIONWith TO-252(DPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SB963-ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor control

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1276DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOHigh Speed SwitchingComplement to Type 2SB950100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed power switching applications.ABS

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949/949A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings

isc Silicon NPN Darlington Power Transistor 2SD1248DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAX

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1202DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverGeneral purpose power amplifiersABSOLUTE

isc Silicon NPN Power Transistor 2SD1274DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V (Min)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Colle

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1264 2SD1264A DESCRIPTION With TO-220Fa package Complement to type 2SB940/940A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collecto

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1267 2SD1267A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB942/942A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolut

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD1237DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CLarge Current CapacityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-current switching applications.

isc Silicon NPN Power Transistor 2SD1271DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB946Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1289DESCRIPTIONLow Collector Saturation Voltage: V = 0.65V(Typ)@I = 5.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB966100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power

isc Silicon NPN Darlington Power Transistor 2SD1210DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 10AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABS

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD1236DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current Capacity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-curren

isc Silicon NPN Power Transistor 2SD1268DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB943Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.A

isc Silicon NPN Power Transistor 2SD1264DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 150V(Min)(BR)CEOHigh Collector Power DissipationComplement to Type 2SB940Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications and TV verticaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1277 2SD1277A DESCRIPTION With TO-220Fa package Complement to type 2SB951/951A High DC current gain High-speed switching APPLICATIONS For medium speed power switching PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum

isc Silicon NPN Darlington Power Transistor 2SD1245DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @I = 2AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and Motor controlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Darlington Power Transistor 2SD1230DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 4A, V = 3VFE C CECollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOComplement to Type 2SB913Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers, relaydriver

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB941/941A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified o

isc Product Specificationisc Silicon NPN Power Transistor 2SD1239DESCRIPTIONHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifiers .Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE

isc Silicon NPN Darlington Power Transistor 2SD1277DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1263 2SD1263A DESCRIPTION With TO-220Fa package High breakdown voltalge APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SD

isc Silicon NPN Power Transistor 2SD1290DESCRIPTIONHigh VoltageWide Area of Safe OperationBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 V

isc Product Specificationisc Silicon NPN Power Transistor 2SD1243DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie

isc Silicon NPN Power Transistor 2SD1213DESCRIPTIONHigh Collector Current:: I = 20ACLow Collector Saturation Voltage: V = 0.4V(Max)@I = 8ACE(sat) CComplement to Type 2SB904Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers,high-speed inverters,converters applications

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1204DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverGeneral purpose power amplifiersABSOLUTE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1279DESCRIPTIONHigh Breakdown Voltage-: V = 1400V (Min)CBOLow Collector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 8.0ACE(sat) CFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage power

isc Silicon NPN Power Transistors 2SD1235DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current CapacityComplement to Type 2SB919Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLarge current switching of relay drivers, high-speedinverters,converters.ABSOLUTE MAXIMUM RATINGS(T =25)

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1208 DESCRIPTION With TO-3 package Wide area of safe operation High DC current gain Darlington APPLICATIONS Power regulator for line operated TV PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings (Ta=25) SY

isc Silicon NPN Power Transistors 2SD1238LDESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 6ACE(sat) CWide Area of Safe OperationComplement to Type 2SB922LMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,and other general high-current switching

isc Silicon NPN Darlington Power Transistor 2SD1298DESCRIPTIONHigh DC Current Gain: h = 200(Min.)@ I = 6A, V = 2VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lows

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1286DESCRIPTIONWith TO-251(IPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SB963Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlEl

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1271 2SD1271A DESCRIPTION With TO-220Fa package Complement to type 2SB946/946A Low collector saturation voltage Good linearity of hFE Large collector current IC APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-

isc Silicon NPN Power Transistors 2SD1238DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 6ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,and other general high-current switchingapplicationsABSOLUTE MAXIMUM

isc Silicon NPN Darlington Power Transistor 2SD1229DESCRIPTIONHigh DC Current Gain: h = 2000(Min.)@ I = 5A, V = 2VFE C CECollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOComplement to Type 2SB912Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers, relaydrivers

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER

isc Product Specificationisc Silicon NPN Power Transistor 2SD1241DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie

isc Silicon NPN Power Transistor 2SD1270DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB945Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.A

isc Silicon NPN Power Transistor 2SD1291DESCRIPTIONHigh VoltageWide Area of Safe OperationBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 V

isc Silicon NPN Darlington Power Transistor 2SD1296DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 15A, V = 2VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and low

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1223DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon NPN Power Transistor 2SD1271ADESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB946AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUT

isc Silicon NPN Power Transistors 2SD1237LDESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CLarge Current CapacityComplement to Type 2SB921LMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-current switching applic

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1265 2SD1265A DESCRIPTION With TO-220Fa package Low collector saturation voltage Wide area of safe operation APPLICATIONS For audio frequency power applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings(T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION With TO-220Fa package Complement to type 2SB950/950A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings

isc Silicon NPN Power Transistor 2SD1266DESCRIPTIONLow Collector Saturation Voltage: V = 1.2V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1267DESCRIPTIONLow Collector Saturation Voltage: V = 1.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB942Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE M

isc Silicon NPN Darlington Power Transistor 2SD1297DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 15A, V = 2VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and low

isc Silicon NPN Darlington Power Transistor 2SD1233DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 4A, V = 3VFE C CECollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers, relaydrivers, voltage regulator control

isc Silicon NPN Power Transistors 2SD1236LDESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current CapacityComplement to Type 2SB920LMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-current switching applic

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1263DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 250V(Min)(BR)CEOHigh Collector Power Dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY