2SD12 Datasheet. Specs and Replacement
Type Designator: 2SD12
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2SD12 Substitution
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2SD12 datasheet
Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all... See More ⇒
2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1222 Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 2 A) CE (sat) C Complementary to 2SB907. Maximum Ratings (T... See More ⇒
2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1220 Power Amplifier Applications Unit mm Complementary to 2SB905 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 6 V Collector current IC 1.5 A Base current IB 1.0 A Ta = 25 C 1.0 Col... See More ⇒
2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Cha... See More ⇒
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2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage VCE (sat) = 1.5 V (max) (IC = 3 A) Complementary to 2SB908. Absolute Maximum Ratings ... See More ⇒
2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process) 2SD1221 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage V = 4.0 V (typ.) (I = 3 A, I = 0.3 A) CE (sat) C B High power dissipation P = 20 W (Tc = 25 C) C Complementary to 2SB906 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-b... See More ⇒
Ordering number 1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2003A [2SB926/2SD1246] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. JEDEC TO-92 B ... See More ⇒
Ordering number 990C PNP/NPN Epitaxial Planar Silicon Transistors 2SB903/2SD1212 30V/12A High-Speed Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general large-current switching 2010C applications. [2SB903/2SD1212] Features Low collector-to-emitter saturation voltage VCE(sat)=( )0.... See More ⇒
Ordering number 1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2022A [2SB913/2SD1230] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. 1 Base 2 Colle... See More ⇒
Ordering number 1022A PNP/NPN Epitaxial Planar Silicon Transistors 2SB904/2SD1213 30V/12A High-Speed Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit mm inverters, converters. 2022A [2SB904/2SD1213] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max. Large current... See More ⇒
Ordering number EN930D 2SB892 / 2SD1207 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB892 / 2SD1207 Large-Current Switching Applications Applications Power supplies, relay drivers, lamp drivers, and automotive wiring. Features FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and ... See More ⇒
Ordering number 1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit mm inverters, converters. 2010C [2SB919/2SD1235] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max. Large current ... See More ⇒
Ordering number 1798A PNP/NPN Epitaxial Planar Silicon Transistors 2SB922L/2SD1238L 80V/12A Switching Applications Applications Package Dimensions Suittable for relay drivers, high-speed inverters, unit mm converters, and other large-current switching appli- 2022A cations. [2SB922L/2SD1238L] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4... See More ⇒
Ordering number 1028B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB912/2SD1229 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage reguraltor control. 2022A [2SB912/2SD1229] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. 1 Base 2 Coll... See More ⇒
Ordering number 1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2006A [2SB927/2SD1247] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. ( ) 2SB927 EIA... See More ⇒
Ordering number 1797B PNP/NPN Epitaxial Planar Silicon Transistors 2SB921L/2SD1237L 80V/7A Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other genral large current switching 2010C applications. [2SB921L/2SD1237L] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), ... See More ⇒
Ordering number 1796B PNP/NPN Epitaxial Planar Silicon Transistors 2SB920L/2SD1236L 80V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2010C [2SB920L/2SD1236L] Features Low-saturation collector-to-emitter voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max... See More ⇒
2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278 ... See More ⇒
Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification with high forward current transfer ratio 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. N type package enabling direct soldering of the radiating fin ... See More ⇒
Power Transistors 2SD1272 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 ... See More ⇒
Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone... See More ⇒
Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SB933 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold... See More ⇒
Power Transistors 2SD1273, 2SD1273A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm Complementary to 2SB1299 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the... See More ⇒
Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Unit mm Complementary to 2SB944 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one ... See More ⇒
Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and ... See More ⇒
Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington Unit mm For power amplification 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Complementary to 2SB950 and 2SB950A Features High foward current transfer ratio hFE 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute ... See More ⇒
Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and ... See More ⇒
Power Transistors 2SD1274, 2SD1274A, 2SD1274B Silicon NPN triple diffusion planar type For power amplification Unit mm Features 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with 3.1 0.1 one screw Absolute Maximum Ratings (TC=25 C) 1.3 0.2 Parameter Symbol Ra... See More ⇒
Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all... See More ⇒
Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB946 and 2SB946A Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 3.1 0.1 Large collector current IC Full-pack package which can be installed to the... See More ⇒
Power Transistors 2SD1268 Silicon NPN epitaxial planar type For power switching Unit mm Complementary to 2SB943 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one ... See More ⇒
Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification Unit mm For TV vertical deflection output 10.0 0.2 4.2 0.2 Complementary to 2SB940 and 2SB940A 5.5 0.2 2.7 0.2 Features 3.1 0.1 High collector to emitter VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink w... See More ⇒
Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington Unit mm For midium speed power switching 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SB939 and 2SB939A Features High foward current transfer ratio hFE 1.5max. 1.1max. High-speed switching 0.8 0.1 0.5max. N type package enabling direct soldering of the radiating fin to the printe... See More ⇒
Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SB951 and 2SB951A 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0... See More ⇒
Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SB931 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold... See More ⇒
Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB987 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage V... See More ⇒
Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all... See More ⇒
Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification with high forward current transfer ratio 6.0 0.5 1.0 0.1 Features High foward current transfer ratio hFE 1.5max. 1.1max. Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to 0.8 ... See More ⇒
Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Complementary to 2SB929 and 2SB929A Features High forward current transfer ratio hFE which has satisfactory linearity 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the ... See More ⇒
Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Unit mm Complementary to 2SB945 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one ... See More ⇒
Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Features Wide area of safe operation (ASO) 1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 0.8 0.1 0.5max. Absolute Maximum Ratings (T... See More ⇒
Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB987 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage V... See More ⇒
Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Complementary to 2SB930 and 2SB930A Features High forward current transfer ratio hFE which has satisfactory linearity 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the ... See More ⇒
Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type Unit mm For power switching 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SB934 Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.8 0.1 0.5max. N type package enabling direct solder... See More ⇒
Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type Darlington Unit mm For power amplification 10.0 0.2 4.2 0.2 Complementary to 2SB949 and 2SB949A 5.5 0.2 2.7 0.2 Features 3.1 0.1 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute... See More ⇒
Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit mm For power amplification 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SB938 and 2SB938A Features High foward current transfer ratio hFE High-speed switching 1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed cir... See More ⇒
Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington Unit mm For power amplification 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SB937 and 2SB937A Features High foward current transfer ratio hFE 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circui... See More ⇒
Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone... See More ⇒
Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 10.0 0.2 4.2 0.2 Low collector to emitter saturation voltage VCE(sat) 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with ... See More ⇒
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITI... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1291 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified out... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1296 DESCRIPTION With TO-3PN package High DC current gain Low saturation voltage APPLICATIONS For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) a... See More ⇒
Power Transistors www.jmnic.com 2SD1271A Silicon NPN Transistors B C E Features For Power Switching. With TO-220Fa package Complement to type 2SB946 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V ICP Peak collector current 15 A IC Coll... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION With TO-220Fa package Complement to type 2SB950 and 2SB950A High forward current transfer ratio hFE High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUT... See More ⇒
Product Specification www.jmnic.com 2SD1297 Silicon NPN Transistors B C E Features Darlington With TO-3PFa package Low speed power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 5 V IC Collector current-Continuous 25 A ... See More ⇒
2SD1207 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features , Low saturation voltage, large current capacity. / Applications , , Power supplies, relay drivers, lamp ... See More ⇒
2SD1273(A)F(BR3DA1273(A)F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features h FE Power amplifier with high forward current transfer ratio applications. / Applications h FE High hFE, good linearity of hFE. ... See More ⇒
SMD Type Transistors NPN Transistors 2SD1256 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.127 +0.1 0.80-0.1 max Complementary to 2SB933 + 0.1 1 Base 2.3 0.60- 0.1 +0.1... See More ⇒
SMD Type Transistors NPN Transistors 2SD1253A TO-252 Unit mm +0.15 Features 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 Complementary to 2SB930A 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 ... See More ⇒
SMD Type Transistors NPN Transistors 2SD1255 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 Large collector current IC 0.80-0.1 max Complementary to 2SB932 + 0.1 1 Base 2.3 ... See More ⇒
SMD Type Transistors NPN Transistors 2SD1280 1.70 0.1 Features Satisfactory operation performances at high efficiency with the low-voltage power supply. Low collector to emitter saturation voltage VCE(sat) 0.42 0.1 0.46 0.1 Complementary to 2SB956 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Ba... See More ⇒
SMD Type Transistors NPN Transistors 2SD1254 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 0.80-0.1 Large collector current IC max Complementary to 2SB931 + 0.1 1 Base 2.3 0... See More ⇒
SMD Type Transistors NPN Transistors 2SD1257A TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3... See More ⇒
SMD Type Transistors NPN Transistors 2SD1250 TO-252 Unit mm +0.15 6.50-0.15 Features +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.127 Complementary to 2SB928 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Co... See More ⇒
SMD Type Transistors NPN Transistors 2SD1250A TO-252 Unit mm +0.15 6.50-0.15 Features +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.127 Complementary to 2SB928 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 C... See More ⇒
SMD Type Transistors NPN Transistors 2SD1252 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 Low collector to emitter saturation voltage VCE(sat) 0.80-0.1 max Complementary to 2SB929 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 ... See More ⇒
SMD Type Transistors NPN Transistors 2SD1252A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 Low collector to emitter saturation voltage VCE(sat) 0.80-0.1 max Complementary to 2SB929A + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 ... See More ⇒
SMD Type Transistors NPN Transistors 2SD1253 TO-252 Unit mm +0.15 Features 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.127 +0.1 Complementary to 2SB930 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Co... See More ⇒
SMD Type Transistors NPN Transistors 2SD1257 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.127 +0.1 Complementary to 2SB934 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 ... See More ⇒
SMD Type Transistors NPN Transistors 2SD1221 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 Features 5.30+0.2 0.50 +0.8 -0.2 -0.7 Low collector saturation voltage VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) High power dissipation PC = 20 W (Tc = 25 C) 0.127 0.80+0.1 max -0.1 Complementary to 2SB906 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1278 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1288 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Typ)@I = 4.0A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB965 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power ... See More ⇒
isc Silicon NPN Power Transistor 2SD1269 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB944 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE M... See More ⇒
isc Silicon NPN Power Transistor 2SD1266A DESCRIPTION Low Collector Saturation Voltage V = 1.2V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB941A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1294 DESCRIPTION Included Avalanche Diode- V = 60 15V Z High DC Current Gain h = 2000 20000@ I = 0.5A, V = 5V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power regulator for line operated TV applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
isc Silicon NPN Power Transistor 2SD1255 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.5V(Max.)@ I = 3.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Switching regulators ABSOLUT... See More ⇒
isc Product Specification isc Silicon NPN Power Transistor 2SD1242 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifie... See More ⇒
isc Silicon NPN Power Transistor 2SD1265 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
isc Silicon NPN Power Transistor 2SD1212 DESCRIPTION High Collector Current I = 12A C Low Collector Saturation Voltage V = 0.4V(Max)@I = 5A CE(sat) C Complement to Type 2SB903 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general large-current switc... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1286-Z DESCRIPTION With TO-252(DPAK) packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to type 2SB963-Z Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1276 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO High Speed Switching Complement to Type 2SB950 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium speed power switching applications. ABS... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949/949A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings ... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1248 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 4A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAX... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1202 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE... See More ⇒
isc Silicon NPN Power Transistor 2SD1274 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V (Min) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Colle... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1264 2SD1264A DESCRIPTION With TO-220Fa package Complement to type 2SB940/940A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collecto... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1267 2SD1267A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB942/942A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolut... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD1237 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Large Current Capacity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applications.... See More ⇒
isc Silicon NPN Power Transistor 2SD1271 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB946 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. A... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1289 DESCRIPTION Low Collector Saturation Voltage V = 0.65V(Typ)@I = 5.0A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB966 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1210 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 10A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABS... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD1236 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-curren... See More ⇒
isc Silicon NPN Power Transistor 2SD1268 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB943 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. A... See More ⇒
isc Silicon NPN Power Transistor 2SD1264 DESCRIPTION Collector-Emitter Breakdown Voltage V = 150V(Min) (BR)CEO High Collector Power Dissipation Complement to Type 2SB940 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1277 2SD1277A DESCRIPTION With TO-220Fa package Complement to type 2SB951/951A High DC current gain High-speed switching APPLICATIONS For medium speed power switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1245 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain h = 500(Min) @I = 2A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1230 DESCRIPTION High DC Current Gain h = 1500(Min.)@ I = 4A, V = 3V FE C CE Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Complement to Type 2SB913 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay driver... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1266 2SD1266A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB941/941A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified o... See More ⇒
isc Product Specification isc Silicon NPN Power Transistor 2SD1239 DESCRIPTION High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifiers . Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE ... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1277 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-B... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1263 2SD1263A DESCRIPTION With TO-220Fa package High breakdown voltalge APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD... See More ⇒
isc Silicon NPN Power Transistor 2SD1290 DESCRIPTION High Voltage Wide Area of Safe Operation Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V... See More ⇒
isc Product Specification isc Silicon NPN Power Transistor 2SD1243 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifie... See More ⇒
isc Silicon NPN Power Transistor 2SD1213 DESCRIPTION High Collector Current I = 20A C Low Collector Saturation Voltage V = 0.4V(Max)@I = 8A CE(sat) C Complement to Type 2SB904 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high-speed inverters,converters applications... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1204 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1279 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO Low Collector-Emitter Saturation Voltage- V = 5.0V(Max.)@ I = 8.0A CE(sat) C Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage power... See More ⇒
isc Silicon NPN Power Transistors 2SD1235 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity Complement to Type 2SB919 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Large current switching of relay drivers, high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1208 DESCRIPTION With TO-3 package Wide area of safe operation High DC current gain Darlington APPLICATIONS Power regulator for line operated TV PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings (Ta=25 ) SY... See More ⇒
isc Silicon NPN Power Transistors 2SD1238L DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB922L Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching ... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1298 DESCRIPTION High DC Current Gain h = 200(Min.)@ I = 6A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low s... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1286 DESCRIPTION With TO-251(IPAK) packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to type 2SB963 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control El... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1271 2SD1271A DESCRIPTION With TO-220Fa package Complement to type 2SB946/946A Low collector saturation voltage Good linearity of hFE Large collector current IC APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-... See More ⇒
isc Silicon NPN Power Transistors 2SD1238 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 6A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching applications ABSOLUTE MAXIMUM... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1229 DESCRIPTION High DC Current Gain h = 2000(Min.)@ I = 5A, V = 2V FE C CE Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Complement to Type 2SB912 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER ... See More ⇒
isc Product Specification isc Silicon NPN Power Transistor 2SD1241 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifie... See More ⇒
isc Silicon NPN Power Transistor 2SD1270 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB945 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. A... See More ⇒
isc Silicon NPN Power Transistor 2SD1291 DESCRIPTION High Voltage Wide Area of Safe Operation Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1296 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 15A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1223 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... See More ⇒
isc Silicon NPN Power Transistor 2SD1271A DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB946A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUT... See More ⇒
isc Silicon NPN Power Transistors 2SD1237L DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Large Current Capacity Complement to Type 2SB921L Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applic... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1265 2SD1265A DESCRIPTION With TO-220Fa package Low collector saturation voltage Wide area of safe operation APPLICATIONS For audio frequency power applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(T... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION With TO-220Fa package Complement to type 2SB950/950A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings ... See More ⇒
isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION Low Collector Saturation Voltage V = 1.2V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB941 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE M... See More ⇒
isc Silicon NPN Power Transistor 2SD1267 DESCRIPTION Low Collector Saturation Voltage V = 1.5V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB942 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE M... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1297 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 15A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low ... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1233 DESCRIPTION High DC Current Gain h = 1500(Min.)@ I = 4A, V = 3V FE C CE Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control ... See More ⇒
isc Silicon NPN Power Transistors 2SD1236L DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity Complement to Type 2SB920L Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applic... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1263 DESCRIPTION Collector-Emitter Breakdown Voltage V = 250V(Min) (BR)CEO High Collector Power Dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
Detailed specifications: 2SD1193, 2SD1194, 2SD1195, 2SD1196, 2SD1197, 2SD1198, 2SD1198A, 2SD1199, A733, 2SD120, 2SD1200, 2SD1201, 2SD1202, 2SD1203, 2SD1204, 2SD1205, 2SD1205A
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