Справочник транзисторов. 2N2222A

 

Биполярный транзистор 2N2222A - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N2222A
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.8 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Ёмкость коллекторного перехода (Cc): 8 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO18

 Аналоги (замена) для 2N2222A

 

 

2N2222A Datasheet (PDF)

 ..1. Size:53K  philips
2n2222 2n2222a cnv 2.pdf

2N2222A
2N2222A

DISCRETE SEMICONDUCTORSDATA SHEETM3D1252N2222; 2N2222ANPN switching transistors1997 May 29Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors 2N2222; 2N2222AFEATURES PINNING High current (max. 800 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitte

 ..2. Size:168K  st
2n2222a 2n2219a.pdf

2N2222A
2N2222A

2N2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakage

 ..3. Size:166K  st
2n2219a 2n2222a.pdf

2N2222A
2N2222A

2N2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakage

 ..4. Size:116K  central
2n2221a 2n2222a.pdf

2N2222A
2N2222A

DATA SHEET2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Base Voltage VCBO 75 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage

 ..5. Size:232K  mcc
2n2222 2n2222a to-18.pdf

2N2222A
2N2222A

MCC2N2222Micro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112N2222APhone: (818) 701-4933Fax: (818) 701-4939Features High current (max.800mA) Low voltage (max.40V) NPN Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates TransistorsRoHS Compliant. See ordering information) Maximum Ratings

 ..6. Size:1044K  blue-rocket-elect
2n2222a.pdf

2N2222A
2N2222A

2N2222A Rev.G .Aug.-2018 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features I , V CBO CE(sat)Low Leakage current, Low collector saturation voltage enabling low voltage operation. / Applications General purpose amplifier.

 ..7. Size:239K  semtech
2n2222 2n2222a.pdf

2N2222A
2N2222A

2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Sy

 ..8. Size:377K  aeroflex
2n2221a 2n2221al 2n2221aua 2n2221aub 2n2222a 2n2222al 2n2222aua 2n2222aub.pdf

2N2222A
2N2222A

Radiation Hardened NPN Silicon Switching Transistors2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUBFeatures Qualified to MIL-PRF-19500/255 Levels: CommericalJANSJANSM-3K Rads (Si) JANSD-l0K Rads (Si) JANSP-30K Rads (Si) JANSL-50K Rads (Si) JANSR-l00K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB PackagesAbsolute Maximum Ra

 ..9. Size:582K  slkor
2n2222a.pdf

2N2222A
2N2222A

2N2222ANPN / DescriptionsTO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features / Applications ICBO, VCE(sat)Low Leakage current, Low collector saturation voltage enabling low voltage operation.General purpose amplifier. / Equivalent Circuit

 0.1. Size:238K  motorola
mtp2n2222a p2n2222a.pdf

2N2222A
2N2222A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2222A/DAmplifier TransistorsNPN SiliconP2N2222ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit

 0.2. Size:1138K  st
2n2222ahr.pdf

2N2222A
2N2222A

2N2222AHRHi-Rel 40 V, 0.8 A NPN transistorDatasheet - production dataFeaturesParameter ESCC JANS12 BVCEO min 40 V 50 V3IC (max) 0.8 A TO-1833hFE at 10 V - 150 mA 10041122 Hermetic packagesLCC-3UB ESCC and JANS qualifiedPin 4 in UB is connected to the metallic lid. Up to 100 krad(Si) low dose rateeDescriptionFigure 1. Internal schematic

 0.3. Size:164K  onsemi
p2n2222a-d.pdf

2N2222A
2N2222A

P2N2222AAmplifier TransistorsNPN SiliconFeatures These are Pb--Free Devices*http://onsemi.comCOLLECTOR1MAXIMUM RATINGS (TA =25C unless otherwise noted)Characteristic Symbol Value Unit2BASECollector--Emitter Voltage VCEO 40 VdcCollector--Base Voltage VCBO 75 Vdc3Emitter--Base Voltage VEBO 6.0 VdcEMITTERCollector Current -- Continuous IC 600 mAdcTotal Devi

 0.4. Size:165K  onsemi
p2n2222ag.pdf

2N2222A
2N2222A

P2N2222AAmplifier TransistorsNPN SiliconFeatures These are Pb--Free Devices*http://onsemi.comCOLLECTOR1MAXIMUM RATINGS (TA =25C unless otherwise noted)Characteristic Symbol Value Unit2BASECollector--Emitter Voltage VCEO 40 VdcCollector--Base Voltage VCBO 75 Vdc3Emitter--Base Voltage VEBO 6.0 VdcEMITTERCollector Current -- Continuous IC 600 mAdcTotal Devi

 0.5. Size:186K  optek
2n2222aua.pdf

2N2222A
2N2222A

 0.6. Size:250K  optek
2n2222aub.pdf

2N2222A
2N2222A

Product Bulletin JANTX, JANTXV, 2N2222AUBSeptember 1996Surface Mount NPN General Purpose TransistorType JANTX, JANTXV, 2N2222AUBFeature Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 VCeramic surface mount packageCollector-Emitter Voltage. . . . . . .

 0.7. Size:563K  semelab
2n2222ac1a.pdf

2N2222A
2N2222A

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VE

 0.8. Size:86K  semelab
2n2222ac3a 2n2222ac3b 2n2222ac3c.pdf

2N2222A
2N2222A

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C High Speed Saturated Switching Hermetic LCC3 Ceramic package. Variant B to MIL-PRF-19500/255 outline Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VEBO Emitter Bas

 0.9. Size:563K  semelab
2n2222ac1b.pdf

2N2222A
2N2222A

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VE

 0.10. Size:138K  microsemi
2n2222aubc.pdf

2N2222A
2N2222A

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM 3K Rads (Si) 2N2221A 2N2222A JANSD 10K Rads (Si) 2N2221AL 2N2222AL JANSP 30K Rads (Si) 2N2221AUA 2N2222AUA

 0.11. Size:462K  first silicon
2n2222ae.pdf

2N2222A
2N2222A

SEMICONDUCTOR2N2222AETECHNICAL DATAGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifier3applications. They are housed in the SC-89 package whichis designed for low power surface mount applications.1Features 2compliance with RoHS requirements. We declare that the material of product SC-89ORDERING INFORMATIONCOLLECTOR

 0.12. Size:446K  first silicon
2n2222as.pdf

2N2222A
2N2222A

SEMICONDUCTOR2N2222ASTECHNICAL DATAGeneral Purpose TransistorNPN Silicon3compliance with RoHS requirements. We declare that the material of product 21ORDERING INFORMATION SOT23Device Maring Shipping 2N2222AS 1P 3000 / Tape & ReelCOLLECTOR31MAXIMUM RATINGS (TA = 25C)BASERating Symbol Max Unit2Collector-Emitter Voltage VCEO 40 VdcEMITTERCol

 0.13. Size:326K  first silicon
2n2222au.pdf

2N2222A
2N2222A

SEMICONDUCTOR2N2222AUTECHNICAL DATAGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-323/SC-70 package which 3is designed for low power surface mount applications.Features 12compliance with RoHS requirements. We declare that the material of product SC-70 / SOT 323 ORDERING INFO

Другие транзисторы... 2N2220A , 2N2221 , 2N2221A , 2N2221ACSM , 2N2221ADCSM , 2N2221CSM , 2N2221DCSM , 2N2222 , 8550 , 2N2222ACSM , 2N2222ACSM4 , 2N2222ADCSM , 2N2222AQCSM , 2N2222AQF , 2N2222AUB , 2N2222CSM , 2N2222DCSM .

 

 
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