Справочник транзисторов. 2SD120

 

Биполярный транзистор 2SD120 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD120
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 4 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO5

 Аналоги (замена) для 2SD120

 

 

2SD120 Datasheet (PDF)

 0.1. Size:51K  1
2sd1205a.pdf

2SD120
2SD120

Transistor2SD1205, 2SD1205ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 2000.A shunt resistor is omitted from the driver.0.85M type package all

 0.2. Size:86K  1
2sd1206.pdf

2SD120
2SD120

 0.3. Size:51K  sanyo
2sd1207.pdf

2SD120
2SD120

Ordering number : EN930D2SB892 / 2SD1207SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB892 / 2SD1207Large-Current Switching ApplicationsApplications Power supplies, relay drivers, lamp drivers, and automotive wiring.Features FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and

 0.4. Size:42K  rohm
2sd1200.pdf

2SD120

2SB1189 / 2SB1238 / 2SB899FTransistorsTransistors2SD1767 / 2SD1859 / 2SD1200F(96-618-B13)(96-750-D13)278

 0.5. Size:56K  panasonic
2sd1205 e.pdf

2SD120
2SD120

Transistor2SD1205, 2SD1205ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 2000.A shunt resistor is omitted from the driver.0.85M type package all

 0.6. Size:51K  panasonic
2sd1205.pdf

2SD120
2SD120

Transistor2SD1205, 2SD1205ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 2000.A shunt resistor is omitted from the driver.0.85M type package all

 0.7. Size:31K  hitachi
2sd1209.pdf

2SD120
2SD120

2SD1209(K)Silicon NPN Epitaxial, DarlingtonApplication Low frequency power amplifier Complementary pair with 2SA1193(K)OutlineTO-92MOD231. Emitter2. Collector3. Base13212SD1209(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCo

 0.8. Size:942K  blue-rocket-elect
2sd1207.pdf

2SD120
2SD120

2SD1207 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,Low saturation voltage, large current capacity. / Applications ,,Power supplies, relay drivers, lamp

 0.9. Size:183K  inchange semiconductor
2sd1202.pdf

2SD120
2SD120

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1202DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverGeneral purpose power amplifiersABSOLUTE

 0.10. Size:185K  inchange semiconductor
2sd1204.pdf

2SD120
2SD120

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1204DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverGeneral purpose power amplifiersABSOLUTE

 0.11. Size:114K  inchange semiconductor
2sd1208.pdf

2SD120
2SD120

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1208 DESCRIPTION With TO-3 package Wide area of safe operation High DC current gain Darlington APPLICATIONS Power regulator for line operated TV PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings (Ta=25) SY

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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