2SD120 Datasheet. Specs and Replacement

Type Designator: 2SD120

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 4 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO5

 2SD120 Substitution

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2SD120 datasheet

 0.1. Size:51K  1

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2SD120

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all... See More ⇒

 0.2. Size:86K  1

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2SD120

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 0.3. Size:51K  sanyo

2sd1207.pdf pdf_icon

2SD120

Ordering number EN930D 2SB892 / 2SD1207 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB892 / 2SD1207 Large-Current Switching Applications Applications Power supplies, relay drivers, lamp drivers, and automotive wiring. Features FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and ... See More ⇒

 0.4. Size:42K  rohm

2sd1200.pdf pdf_icon

2SD120

2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278 ... See More ⇒

Detailed specifications: 2SD1194, 2SD1195, 2SD1196, 2SD1197, 2SD1198, 2SD1198A, 2SD1199, 2SD12, S8550, 2SD1200, 2SD1201, 2SD1202, 2SD1203, 2SD1204, 2SD1205, 2SD1205A, 2SD1206

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