Справочник транзисторов. 2SD1229

 

Биполярный транзистор 2SD1229 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1229

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 60 W

Макcимально допустимое напряжение коллектор-база (Ucb): 70 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 20 MHz

Статический коэффициент передачи тока (hfe): 3000

Корпус транзистора: TO247

Аналоги (замена) для 2SD1229

 

 

2SD1229 Datasheet (PDF)

1.1. 2sd1229.pdf Size:126K _sanyo

2SD1229
2SD1229

Ordering number:1028B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB912/2SD1229 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage reguraltor control. 2022A [2SB912/2SD1229] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. 1 : Base 2 : Collector

1.2. 2sd1229.pdf Size:133K _inchange_semiconductor

2SD1229
2SD1229

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1229 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB912 ·High DC current gain ·High current capacity and wide ASO ·Low saturation voltage APPLICATIONS ·Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base Collector;connec

 4.1. 2sd1220.pdf Size:188K _toshiba

2SD1229
2SD1229

2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1220 Power Amplifier Applications Unit: mm • Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 6 V Collector current IC 1.5 A Base current IB 1.0 A Ta = 25°C 1.0 Col

4.2. 2sd1221.pdf Size:163K _toshiba

2SD1229
2SD1229

2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process) 2SD1221 Audio Frequency Power Amplifier Application Unit: mm • Low collector saturation voltage : V = 4.0 V (typ.) (I = 3 A, I = 0.3 A) CE (sat) C B • High power dissipation: P = 20 W (Tc = 25°C) C • Complementary to 2SB906 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-b

 4.3. 2sd1222.pdf Size:183K _toshiba

2SD1229
2SD1229

2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1222 Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C • Low saturation voltage: V = 1.5 V (max) (I = 2 A) CE (sat) C • Complementary to 2SB907. Maximum Ratings (T

4.4. 2sd1224.pdf Size:162K _toshiba

2SD1229
2SD1229

2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C • Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25°C) Cha

 4.5. 2sd1223.pdf Size:157K _toshiba

2SD1229
2SD1229

2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Complementary to 2SB908. Absolute Maximum Ratings

4.6. 2sd1225.pdf Size:132K _rohm

2SD1229

4.7. 2sd1228.pdf Size:105K _rohm

2SD1229

4.8. 2sd1226.pdf Size:207K _rohm

2SD1229
2SD1229

4.9. 2sd1221.pdf Size:1307K _kexin

2SD1229
2SD1229

SMD Type Transistors NPN Transistors 2SD1221 TO-252 Unit: mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 ■ Features 5.30+0.2 0.50 +0.8 -0.2 -0.7 ● Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) ● High power dissipation: PC = 20 W (Tc = 25°C) 0.127 0.80+0.1 max -0.1 ● Complementary to 2SB906 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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