All Transistors. 2SD1229 Equivalents Search

Ordering number 1028B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB912/2SD1229 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage reguraltor control. 2022A [2SB912/2SD1229] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. 1 Base 2 Coll... See More ⇒

isc Silicon NPN Darlington Power Transistor 2SD1229 DESCRIPTION High DC Current Gain h = 2000(Min.)@ I = 5A, V = 2V FE C CE Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Complement to Type 2SB912 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers... See More ⇒

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2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1222 Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 2 A) CE (sat) C Complementary to 2SB907. Maximum Ratings (T... See More ⇒

2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1220 Power Amplifier Applications Unit mm Complementary to 2SB905 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 6 V Collector current IC 1.5 A Base current IB 1.0 A Ta = 25 C 1.0 Col... See More ⇒

2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Cha... See More ⇒

2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage VCE (sat) = 1.5 V (max) (IC = 3 A) Complementary to 2SB908. Absolute Maximum Ratings ... See More ⇒

2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process) 2SD1221 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage V = 4.0 V (typ.) (I = 3 A, I = 0.3 A) CE (sat) C B High power dissipation P = 20 W (Tc = 25 C) C Complementary to 2SB906 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-b... See More ⇒

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SMD Type Transistors NPN Transistors 2SD1221 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 Features 5.30+0.2 0.50 +0.8 -0.2 -0.7 Low collector saturation voltage VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) High power dissipation PC = 20 W (Tc = 25 C) 0.127 0.80+0.1 max -0.1 Complementary to 2SB906 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 ... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1223 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... See More ⇒