Биполярный транзистор 2SD1289 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1289
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO126
2SD1289 Datasheet (PDF)
4.1. 2sd1286.pdf 
Size:225K _nec
4.2. 2sd1280 e.pdf Size:52K _panasonic
Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and automati
4.3. 2sd1280.pdf Size:48K _panasonic
Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and automati
4.4. 2sd1288.pdf Size:37K _no
4.5. 2sd1286-z.pdf Size:196K _inchange_semiconductor
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1286-Z DESCRIPTION ·With TO-252(DPAK) packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to type 2SB963-Z ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control
4.6. 2sd1286.pdf Size:192K _inchange_semiconductor
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1286 DESCRIPTION ·With TO-251(IPAK) packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to type 2SB963 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·El
4.7. 2sd1280.pdf Size:1058K _kexin
SMD Type Transistors NPN Transistors 2SD1280 1.70 0.1 ■ Features ● Satisfactory operation performances at high efficiency with the low-voltage power supply. ● Low collector to emitter saturation voltage VCE(sat) 0.42 0.1 0.46 0.1 ● Complementary to 2SB956 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Ba
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
