2SD1289 PDF Specs and Replacement
Type Designator: 2SD1289
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126
2SD1289 Substitution
2SD1289 PDF detailed specifications
2sd1289.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1289 DESCRIPTION Low Collector Saturation Voltage V = 0.65V(Typ)@I = 5.0A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB966 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power... See More ⇒
2sd1280 e.pdf
Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and ... See More ⇒
2sd1280.pdf
Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and ... See More ⇒
Detailed specifications: 2SD1280 , 2SD1281 , 2SD1282 , 2SD1283 , 2SD1284 , 2SD1286 , 2SD1287 , 2SD1288 , 2N5551 , 2SD128A , 2SD129 , 2SD1290 , 2SD1291 , 2SD1292 , 2SD1293M , 2SD1294 , 2SD1295 .
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