2SD1289 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1289
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126
2SD1289 Transistor Equivalent Substitute - Cross-Reference Search
2SD1289 Datasheet (PDF)
2sd1289.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1289DESCRIPTIONLow Collector Saturation Voltage: V = 0.65V(Typ)@I = 5.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB966100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power
2sd1280 e.pdf
Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and
2sd1280.pdf
Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and
2sd1280.pdf
SMD Type TransistorsNPN Transistors2SD12801.70 0.1 Features Satisfactory operation performances at high efficiency with the low-voltage power supply. Low collector to emitter saturation voltage VCE(sat)0.42 0.10.46 0.1 Complementary to 2SB9561.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba
2sd1288.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1288DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Typ)@I = 4.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB965100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power
2sd1286-z.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1286-ZDESCRIPTIONWith TO-252(DPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SB963-ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor control
2sd1286.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1286DESCRIPTIONWith TO-251(IPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SB963Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlEl
Datasheet: 2SD1280 , 2SD1281 , 2SD1282 , 2SD1283 , 2SD1284 , 2SD1286 , 2SD1287 , 2SD1288 , TIP41 , 2SD128A , 2SD129 , 2SD1290 , 2SD1291 , 2SD1292 , 2SD1293M , 2SD1294 , 2SD1295 .
