Биполярный транзистор 2SD1363 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1363
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Ёмкость коллекторного перехода (Cc): 250 pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO220
2SD1363 Datasheet (PDF)
rej03g0786 2sd1368ds-1.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sd1367.pdf
2SD1367Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1001OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1367Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 16 VEmitter to base voltage VEBO 6VCollector
2sd1368.pdf
2SD1368Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1002OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1368Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6VCollector
2sd1366.pdf
2SD1366Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1366Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 5VCollector current IC 1ACollector peak current iC(
2sd1367.pdf
SMD Type TransistorsNPN Transistors2SD1367 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SB10010.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 16 V Emitter - Base Voltage VEBO 6 Collector Current - Continuo
2sd1368.pdf
SMD Type TransistorsNPN Transistors2SD13681.70 0.1 Features Low frequency power amplifier Complementary to 2SB10020.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Contin
2sd1366.pdf
SMD Type TransistorsNPN Transistors2SD13661.70 0.1 Features Low frequency power amplifier Complementary to 2SB10000.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Collector Current - Continu
2sd1361.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1361DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliab
2sd1360.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1360DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliabl
2sd1362.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1362DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector Power Dissipation-: P = 40W@ T = 25C CLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 4ACE(sat) CComplement to Type 2SB992Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI
2sd1365.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1365DESCRIPTIONHigh Collector-Base Voltage: V = 800V(Min)(BR)CBOLow Collector Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor control systems.Power ampli
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050