2SD1363 PDF Specs and Replacement
Type Designator: 2SD1363
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40
W
Maximum Collector-Base Voltage |Vcb|: 70
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 7
A
Max. Operating Junction Temperature (Tj): 150
°C
Electrical Characteristics
Transition Frequency (ft): 10
MHz
Collector Capacitance (Cc): 250
pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package:
TO220
-
BJT ⓘ Cross-Reference Search
2SD1363 PDF detailed specifications
8.1. Size:110K renesas
rej03g0786 2sd1368ds-1.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.2. Size:31K hitachi
2sd1367.pdf 

2SD1367 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1001 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6V Collector ... See More ⇒
8.3. Size:24K hitachi
2sd1368.pdf 

2SD1368 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1002 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6V Collector... See More ⇒
8.4. Size:31K hitachi
2sd1366.pdf 

2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(... See More ⇒
8.5. Size:865K kexin
2sd1367.pdf 

SMD Type Transistors NPN Transistors 2SD1367 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SB1001 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 16 V Emitter - Base Voltage VEBO 6 Collector Current - Continuo... See More ⇒
8.6. Size:400K kexin
2sd1368.pdf 

SMD Type Transistors NPN Transistors 2SD1368 1.70 0.1 Features Low frequency power amplifier Complementary to 2SB1002 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Contin... See More ⇒
8.7. Size:883K kexin
2sd1366.pdf 

SMD Type Transistors NPN Transistors 2SD1366 1.70 0.1 Features Low frequency power amplifier Complementary to 2SB1000 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Collector Current - Continu... See More ⇒
8.8. Size:188K inchange semiconductor
2sd1361.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1361 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliab... See More ⇒
8.9. Size:191K inchange semiconductor
2sd1360.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1360 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliabl... See More ⇒
8.10. Size:207K inchange semiconductor
2sd1362.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1362 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 4A CE(sat) C Complement to Type 2SB992 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI... See More ⇒
8.11. Size:201K inchange semiconductor
2sd1365.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1365 DESCRIPTION High Collector-Base Voltage V = 800V(Min) (BR)CBO Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 2A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor control systems. Power ampli... See More ⇒
Detailed specifications: 2SD136
, 2SD1360
, 2SD1361
, 2SD1362
, 2SD1362N
, 2SD1362O
, 2SD1362R
, 2SD1362Y
, 2SA1943
, 2SD1363O
, 2SD1363N
, 2SD1363R
, 2SD1363Y
, 2SD1364
, 2SD1365
, 2SD1366
, 2SD1366A
.
History: BD535
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