INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1372DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators,converters,inverters,motor control system.ABSOLUTE MAXIMUM RAT

2SD1376(K)Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB1012(K)OutlineTO-126 MOD231. EmitterID2. Collector3. Base16 k 0.5 k23(Typ) (Typ)12SD1376(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base vol

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1370DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliab

isc Silicon NPN Power Transistor 2SD1371DESCRIPTIONHigh VoltageHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching mode power supply and electronicballast applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1373DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOGood Linearity of hFEHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators and ge

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1377DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 4AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amp

isc Silicon NPN Power Transistor 2SD1378DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Saturation Voltage -: V = 0.4V(Max)@ I = 0.5ACE(sat) CComplement to Type 2SB1007Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RAT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1374DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOGood Linearity of hFEHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators and ge

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1375DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOGood Linearity of hFEHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators and ge

isc Silicon NPN Darlington Power Transistor 2SD1376DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-Complement to Type 2SB1012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency powe