2SD1372 Datasheet and Replacement

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1372 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators,converters,inverters,motor control system. ABSOLUTE MAXIMUM RAT... See More ⇒

2SD1376(K) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 6 k 0.5 k 2 3 (Typ) (Typ) 1 2SD1376(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base vol... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1370 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 3A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliab... See More ⇒

isc Silicon NPN Power Transistor 2SD1371 DESCRIPTION High Voltage High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1373 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO Good Linearity of h FE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators and ge... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1377 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 4A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amp... See More ⇒

isc Silicon NPN Power Transistor 2SD1378 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Saturation Voltage - V = 0.4V(Max)@ I = 0.5A CE(sat) C Complement to Type 2SB1007 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RAT... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1374 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO Good Linearity of h FE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators and ge... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1375 DESCRIPTION High Collector-Base Voltage- V = 300V(Min.) CBO Good Linearity of h FE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switching regulators and ge... See More ⇒

isc Silicon NPN Darlington Power Transistor 2SD1376 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- Complement to Type 2SB1012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency powe... See More ⇒