2SD1392 - аналоги, параметры транзистора - Справочник транзисторов

2SD1392 - Аналоги. Основные параметры

   Наименование производителя: 2SD1392
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 30 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 20 MHz
   Статический коэффициент передачи тока (hfe): 8000
   Корпус транзистора: TO126

Аналоги (замена) для 2SD1392

- подбор ⓘ биполярного транзистора по параметрам

2SD1392 - технические параметры

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8.1. Size:43K sanyo
2sd1399.pdf pdf_icon

8.2. Size:80K sanyo
2sd1395.pdf pdf_icon

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2sd1397.pdf pdf_icon

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1397 COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

8.5. Size:204K inchange semiconductor
2sd1393.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1393 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 0.8A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose am

8.6. Size:215K inchange semiconductor
2sd1398.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1398 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V

8.7. Size:215K inchange semiconductor
2sd1399.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1399 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

8.8. Size:204K inchange semiconductor
2sd1394.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1394 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 1.5A FE C Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amp

8.9. Size:207K inchange semiconductor
2sd1390.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1390 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150

8.10. Size:205K inchange semiconductor
2sd1395.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1395 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2.5A FE C Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amp

8.11. Size:214K inchange semiconductor
2sd1397.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1397 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

8.12. Size:212K inchange semiconductor
2sd1391.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1391 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150

8.13. Size:214K inchange semiconductor
2sd1396.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1396 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

Другие транзисторы... 2SD1385 , 2SD1386 , 2SD1387 , 2SD1388 , 2SD1389 , 2SD139 , 2SD1390 , 2SD1391 , 9014 , 2SD1393 , 2SD1394 , 2SD1395 , 2SD1396 , 2SD1397 , 2SD1398 , 2SD1399 , 2SD14 .