2SD1392 Datasheet and Replacement

   Type Designator: 2SD1392
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8000
   Noise Figure, dB: -
   Package: TO126

2SD1392 Substitution

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2SD1392 Datasheet (PDF)

..1. Size:69K no
2sd1392.pdf pdf_icon

8.1. Size:43K sanyo
2sd1399.pdf pdf_icon

8.2. Size:80K sanyo
2sd1395.pdf pdf_icon

8.3. Size:42K sanyo
2sd1396.pdf pdf_icon

8.4. Size:26K wingshing
2sd1397.pdf pdf_icon

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR2SD1397COLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

8.5. Size:204K inchange semiconductor
2sd1393.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1393DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 0.8AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose am

8.6. Size:215K inchange semiconductor
2sd1398.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1398DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V

8.7. Size:215K inchange semiconductor
2sd1399.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1399DESCRIPTIONHigh Breakdown Voltage: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

8.8. Size:204K inchange semiconductor
2sd1394.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1394DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 1.5AFE CLow Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amp

8.9. Size:207K inchange semiconductor
2sd1390.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1390DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150

8.10. Size:205K inchange semiconductor
2sd1395.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1395DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2.5AFE CLow Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amp

8.11. Size:214K inchange semiconductor
2sd1397.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1397DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

8.12. Size:212K inchange semiconductor
2sd1391.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1391DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150

8.13. Size:214K inchange semiconductor
2sd1396.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1396DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Datasheet: 2SD1385 , 2SD1386 , 2SD1387 , 2SD1388 , 2SD1389 , 2SD139 , 2SD1390 , 2SD1391 , C3198 , 2SD1393 , 2SD1394 , 2SD1395 , 2SD1396 , 2SD1397 , 2SD1398 , 2SD1399 , 2SD14 .