2SD14. Аналоги и основные параметры
Наименование производителя: 2SD14
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO36
Аналоги (замена) для 2SD14
- подборⓘ биполярного транзистора по параметрам
2SD14 даташит
2sd1449.pdf
/ e c d n cle stage. e a u n n i e t t n n i o a c s maintenance type planed maintenance type M i discontinued type planed discontinued typed D Maintenance/Discontinued includes following four Product lifecy http //www.semicon.panasonic.co.jp/en/ Please visit following URL about latest information. / e c d n cle stage. e a u n n i e t t n n i o
2sd1408.pdf
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2sd1438.pdf
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2sd1428.pdf
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2sd1407a.pdf
2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit mm High breakdown voltage VCEO = 100 V Low collector saturation voltage VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Col
2sb1037 2sd1459.pdf
Ordering number EN1256C PNP/NPN Planar Silicon Transistors 2SB1037/2SD1459 Color TV Vertical Output, Sound Output Applications Features Package Dimensions High allowable collector dissipation (PC=2W). unit mm Wide ASO. 2010C [2SB1037/2SD1459] JEDEC TO-220AB 1 Base ( ) 2SB1037 EIAJ SC-46 2 Collector 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25
rej03g0788 2sd1419ds-1.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0787 2sd1418ds-1.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sd1481.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) On-chip C-to-B Zener diode for surge voltage absorption Low collector saturation voltage VCE(SAT) = 1.5 V MAX. (at 1 A) Ideal for use in a direct drive from IC to the devices such
2sd1949fra 2sd1484kfra.pdf
Data Sheet AEC-Q101 Qualified Medium Power Transistor (50V,0.5A) 2SD1949FRA / 2SD1484KFRA 2SD1949 / 2SD1484K Features Dimensions (Unit mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) Collector Absolute maximum rationgs (Ta=25 C) SMT3 (SC-59) Parameter Symbol Limits Unit
2sd1468.pdf
2SD1834 Transistors Transistors 2SD1468S / 2SD1865 (94S-340-D64) (94L-767-D65) 311 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for re
2sd1949 2sd1949 2sd1484k.pdf
Data Sheet Medium Power Transistor (50V,0.5A) M e d i u m P o w e r T r a n s i s t o r ( 5 0 V , 0 . 5 A ) 2SD1949 / 2SD1484K 2 S D 1 9 4 9 2 S D 1 4 8 4 K Features Dimensions (Unit mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) C
2sc1741as 2sc3359s 2sd1484.pdf
2SD1949 / 2SD1484K / 2SC1741S Transistors Transistors 2SC3359S (96-678-D15) (SPEC-D16) 318
2sd1949 2sd1484k.pdf
2SD1949 / 2SD1484K Datasheet Middle Power Transistor (50V, 500mA) lOutline l Parameter Value SOT-323 SOT-346 VCEO 50V IC 500mA 2SD1949 2SD1484K (UMT3) (SMT3) lFeatures lInner circuit l l 1)High current. (IC=0.5A) 2)Low VCE(sat) VCE(sat) 400mV at IC=150mA/IB=15
2sd1499-p.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SD1499-P Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating NPN Silicon Moisure Sensitivity Level 1 Wide Safe Operation Area Power Transistors Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Com
2sd1424.pdf
Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1.27 1.27 Collector to emitter voltag
2sd1458 e.pdf
Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0
2sd1458.pdf
Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0
2sd1439.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sd1440.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sd1499.pdf
Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1063 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Extremely satisfactory linearity of the forward current transfer 3.1 0.1 ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat
2sd1478 e.pdf
Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit mm +0.2 For low-frequency amplification 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE 3 = 4000 to 20000. 2 A shunt resistor is omitted from the driver
2sd1446.pdf
Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features 3.1 0.1 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25 C
2sd1457.pdf
Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features High foward current transfer ratio hFE 3.2 0.1 High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 2.0 0.2 2.0 0.1 Absolute Maximum Ratings (TC=25 C)
2sd1474.pdf
Power Transistors 2SD1474 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High forward current transfer ratio hFE which has satisfactory 3.1 0.1 linearity High emitter to base voltage VEBO Full-pack package which can be installed to the heat sink with one screw 1.3
2sd1450.pdf
Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter vol
2sd1450 e.pdf
Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter vol
2sd1423 e.pdf
Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1030 and 2SB1030A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SD1423 30 VCBO V 1 2 3 base voltage 2SD1423A 60 Collector
2sd1485.pdf
Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1054 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 Extremely satisfactory linearity of the forward current transfer ratio hFE 3.2 0.1 Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink
2sd1424 e.pdf
Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1.27 1.27 Collector to emitter voltag
2sd1423.pdf
Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1030 and 2SB1030A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SD1423 30 VCBO V 1 2 3 base voltage 2SD1423A 60 Collector
2sd1441.pdf
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2sd1478.pdf
Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit mm +0.2 For low-frequency amplification 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE 3 = 4000 to 20000. 2 A shunt resistor is omitted from the driver
2sd1480.pdf
Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Unit mm Complementary to 2SB1052 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High forward current transfer ratio hFE which has satisfactory linearity 3.1 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one
2sd1472.pdf
2SD1472 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 2 1 2 3 1 ID 4 1. Base 2. Collector 2 k 0.5 k 3. Emitter (Typ) (Typ) 4. Collector (Flange) 3 2SD1472 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEB
2sd1471.pdf
2SD1471 Silicon NPN Planar, Darlington Application High gain amplifier Outline UPAK 1 2 2 3 1 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1471 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector pea
2sd1418.pdf
2SD1418 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1025 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1418 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5V Collector
2sd1420.pdf
2SD1420 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1420 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5V Collector current IC 1.5 A Collector peak curren
2sd1419.pdf
2SD1419 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1026 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5V Collecto
2sd1436.pdf
2SD1436(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1.5 k 130 (Typ) (Typ) 1 3 2 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VE
2sd1421.pdf
2SD1421 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1421 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5V Collector current IC 1.5 A Collector peak curren
2sd1470.pdf
2SD1470 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 1 2 2 3 1 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1470 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector current IC 1A Colle
2sd1489.pdf
2SD1489 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1058 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD1489 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6V Collector current IC 2A Collec
2sd1490.pdf
2SD1490 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1059 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD1490 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6V Collector current IC 1A Collec
2sd1468s.pdf
2SD1468S 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Low Saturation Voltage Ideal for Voltage, High Current Drives. High DC Current Gain and High Current Millimeter REF. Min. Max. A 3.90 4.10 B 3.05 3.25 CLASSIFICATION OF hFE C 1.42 1.62 D 1
2sd1468.pdf
2SD1468 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation Voltage Ideal for Low Voltage, High Current Dribes High DC Current Gain and High Current Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - CLASSIFICATION OF hFE D 3.
2sd1437.pdf
2SD1437 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB1033 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 40 W Juncti
2sd1403.pdf
Silicon Diffused Power Transistor 2SD1403 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CES
2sd1402.pdf
NPN TRIPLE DIFFUSED 2SD1402 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) SC-65 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collecto
2sd1432.pdf
NPN TRIPLE DIFFUSED 2SD1432 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC
2sd1431.pdf
NPN TRIPLE DIFFUSED 2SD1431 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC
2sd1409.pdf
2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA TO-220F SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 600 V Collector-emitter voltage (open base) VCEO - 400 V Collector current (DC) I
2sd1433.pdf
NPN TRIPLE DIFFUSED 2SD1433 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) I
2sd1409.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION With TO-220F package High DC current gain Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS Igniter applications High volitage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and sym
2sd1441.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability High speed switching Wide area of safe operation APPLICATIONS For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1
2sd1468s.pdf
2SD1468S TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low saturation voltage, typically Vce(sat)=0.006V Ideal for voltage, high current drives, High DC current gain and high current MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V
2sd1499.pdf
2SD1499(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Extremely satisfactory linearity of the forward current transfer ratio hFE Wide safe operation area High transition frequency fT Full-pack package which can be installed to the heat sink with one screw. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter
2sd1468.pdf
2SD1468(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low saturation voltage Ideal for low voltage, high current dribes High DC current gain and high current MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 30 V Collector-Base Voltage Dimensions in inches and (millimeters) VCEO 15 V Collector-E
2sd1472.pdf
SMD Type Transistors NPN Transistors 2SD1472 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A C Collector Emitter Voltage VCEO=120V 0.42 0.1 0.46 0.1 B ID 1.Base 2 k 0.5 k 2.Collector (Typ) (Typ) 3.Emitter E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter
2sd1471.pdf
SMD Type Transistors NPN Transistors 2SD1471 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.3A C Collector Emitter Voltage VCEO=30V B 0.42 0.1 0.46 0.1 1.Base E 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base V
2sd1478a.pdf
SMD Type Transistors NPN Transistors 2SD1478A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.5A 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 C 1.Base B 2.Emitter 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO
2sd1418.pdf
SMD Type Transistors NPN Transistors 2SD1418 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SB1025 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continu
2sd1420.pdf
SMD Type Transistors NPN Transistors 2SD1420 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=120V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage
2sd1419.pdf
SMD Type Transistors NPN Transistors 2SD1419 1.70 0.1 Features Low frequency power amplifier Complementary to 2SB1026 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 5 Collector Current - Conti
2sd1421.pdf
SMD Type Transistors NPN Transistors 2SD1421 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V Low frequency power amplifier 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage
2sd1478.pdf
SMD Type Transistors NPN Transistors 2SD1478 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.5A 1 2 Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 C 1.Base B 2.Emitter 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3
2sd1470.pdf
SMD Type Transistors NPN Transistors 2SD1470 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=60V C 0.42 0.1 0.46 0.1 B 1.Base 2.Collector E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Vol
2sd1400.pdf
isc Silicon NPN Power Transistor 2SD1400 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V C
2sd1429.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1429 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sd1459.pdf
isc Silicon NPN Power Transistor 2SD1459 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1037 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV vertical output, sound output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
2sd1404.pdf
isc Silicon NPN Power Transistor 2SD1404 DESCRIPTION High Collector Current Capability High Collector Power Dissipation Capability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS B/W TV horizontal deflection output applications. High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sd1452.pdf
isc Silicon NPN Power Transistor 2SD1452 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
2sd1437.pdf
isc Silicon NPN Power Transistor 2SD1437 DESCRIPTION Collector-Emitter Breakdown Voltage V = 60V(Min) (BR)CEO Complement to Type 2SB1033 Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
2sd1403.pdf
isc Silicon NPN Power Transistor 2SD1403 DESCRIPTION High Breakdown Voltage High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Col
2sd1408.pdf
isc Silicon NPN Power Transistor 2SD1408 DESCRIPTION Low Collector Saturation Voltage V = 1.5V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Complement to Type 2SB1017 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
2sd1412.pdf
isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Complement to Type 2SB1019 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications.
2sd1402.pdf
isc Silicon NPN Power Transistor 2SD1402 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V C
2sd1481.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1481 DESCRIPTION On-chip C-to-B Zener diode for surge voltage absorption Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1A CE(sat) C High DC Current Gain h = 2000(Min) @I = 1A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation
2sd1413.pdf
isc Silicon NPN Darlington Power Transistor 2SD1413 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1A, V = 2V FE C CE Complement to Type 2SB1023 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI
2sd1454.pdf
isc Silicon NPN Power Transistor 2SD1454 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
2sd1445.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1445 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 10A CE(sat) C Collector-Emitter Breakdown Voltage- V = 20V (Min) (BR)CEO Fast Switching Speed Complement to Type 2SB948 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power ampl
2sd1444 2sd1444a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1444 2SD1444A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching High collector current Complement to type 2SB953/953A APPLICATIONS Power amplifiers Low voltage switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (
2sd1407.pdf
isc Silicon NPN Power Transistor 2SD1407 DESCRIPTION Low Collector Saturation Voltage V = 2.0V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Complement to Type 2SB1016 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
2sd1439.pdf
isc Silicon NPN Power Transistor 2SD1439 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNI
2sd1440.pdf
isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba
2sd1499.pdf
isc Silicon NPN Power Transistor 2SD1499 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1063 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sd1445 2sd1445a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A DESCRIPTION With TO-220Fa package Complement to type 2SB948/948A High speed switching Low collector saturation voltage APPLICATIONS For power amplification,power switching and low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Ab
2sd1479.pdf
isc Silicon NPN Power Transistor 2SD1479 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V
2sd1414.pdf
isc Silicon NPN Darlington Power Transistor 2SD1414 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1A, V = 2V FE C CE Complement to Type 2SB1024 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI
2sd1430.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1430 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sd1409a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1409A DESCRIPTION High collector-emitter breakdown voltage- V = 400V(Min) (BR)CEO High DC current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage swi
2sd1446.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1446 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 500(Min) @ I = 2A, V = 2V FE C CE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance
2sd1457.pdf
isc Silicon NPN Darlington Power Transistor 2SD1457 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 2A, V = 2V FE C CE High Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
2sd1494.pdf
isc Silicon NPN Power Transistor 2SD1494 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
2sd1488.pdf
isc Silicon NPN Power Transistor 2SD1488 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max)@I = 7A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1057 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
2sd1492.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1492 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
2sd1432.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1432 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sd1415.pdf
isc Silicon NPN Darlington Power Transistor 2SD1415 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Complement to Type 2SB1020 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL
2sd1410.pdf
isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applicati
2sd1444.pdf
isc Silicon NPN Power Transistor 2SD1444 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 20V (Min) (BR)CEO Complement to Type 2SB956 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =
2sd1427.pdf
isc Silicon NPN Power Transistor 2SD1427 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
2sd1426.pdf
isc Silicon NPN Power Transistor 2SD1426 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALU
2sd1475.pdf
isc Silicon NPN Power Transistor 2SD1475 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sd1435.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1435 DESCRIPTION With TO-3PN package DARLINGTON High DC current gain Complement to type 2SB1031 APPLICATIONS For low frequency power amplifier and high current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline
2sd1466.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1466 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 8A CE(sat) C High DC Current Gain h = 200(Min) @ I = 15A, V = 3V FE C CE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance
2sd1456.pdf
isc Silicon NPN Power Transistor 2SD1456 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
2sd1436.pdf
isc Silicon NPN Darlington Power Transistor 2SD1436 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 5A, V = 3V FE C CE Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB1032 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATI
2sd1428.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1428 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAX
2sd1411.pdf
isc Silicon NPN Power Transistor 2SD1411 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Complement to Type 2SB1018 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications.
2sd1476.pdf
isc Silicon NPN Power Transistor 2SD1476 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sd1431.pdf
isc Silicon NPN Power Transistor 2SD1431 DESCRIPTION High Speed t = 1.0 us(MIN) @ I = 4A , I = 0.8A f C B(end) High Voltage V =1300V CBO Low Saturation Voltage V
2sd1415a.pdf
isc Silicon NPN Darlington Power Transistor 2SD1415A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switch
2sd1496.pdf
isc Silicon NPN Power Transistor 2SD1496 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
2sd1405.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1405 DESCRIPTION High DC Current Gain h = 200(Min) @I = 0.5A FE C Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 1A CE(sat) C Collector Power Dissipation of 25W@ T =25 C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power
2sd1455.pdf
isc Silicon NPN Power Transistor 2SD1455 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
2sd1485.pdf
isc Silicon NPN Power Transistor 2SD1485 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max)@I = 3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1054 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
2sd1406.pdf
isc Silicon NPN Power Transistor 2SD1406 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Complement to Type 2SB1015 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MA
2sd1409.pdf
isc Silicon NPN Darlington Power Transistor 2SD1409 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage switching applications ABSOLUTE MAXIMUM RATINGS(T =25
2sd1487.pdf
isc Silicon NPN Power Transistor 2SD1487 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max)@I = 5A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1056 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
2sd1441.pdf
isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba
2sd1480.pdf
isc Silicon NPN Power Transistor 2SD1480 DESCRIPTION Low Collector Saturation Voltage V = 2.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB1052 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications.
2sd1486.pdf
isc Silicon NPN Power Transistor 2SD1486 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max)@I = 4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1055 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
2sd1433.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1433 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sd1497.pdf
isc Silicon NPN Power Transistor 2SD1497 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
2sd1453.pdf
isc Silicon NPN Power Transistor 2SD1453 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
2sd1493.pdf
isc Silicon NPN Power Transistor 2SD1493 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
2sd1416.pdf
isc Silicon NPN Darlington Power Transistor 2SD1416 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Complement to Type 2SB1021 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI
2sd1457 2sd1457a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A DESCRIPTION With TO-3PFa package High DC current gain DARLINGTON High VCBO APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PFa) and symbol 3 Emitter Absolute maximum ratings
2sd1495.pdf
isc Silicon NPN Power Transistor 2SD1495 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
2sd1417.pdf
isc Silicon NPN Darlington Power Transistor 2SD1417 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 3V, I = 3A) FE CE C Low Collector Saturation Voltage Complement to Type 2SB1022 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier and switchin
2sd1451.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1451 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sd1425.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1425 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAX
Другие транзисторы: 2SD1392, 2SD1393, 2SD1394, 2SD1395, 2SD1396, 2SD1397, 2SD1398, 2SD1399, D880, 2SD1400, 2SD1401, 2SD1401BL, 2SD1401GR, 2SD1402, 2SD1402O, 2SD1403, 2SD1404
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