2SD14 Datasheet and Replacement

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2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 100 VCol

Ordering number:EN1256C PNP/NPN Planar Silicon Transistors2SB1037/2SD1459Color TV Vertical Output, Sound OutputApplicationsFeatures Package Dimensions High allowable collector dissipation (PC=2W).unit:mm Wide ASO.2010C[2SB1037/2SD1459]JEDEC : TO-220AB 1 : Base( ) : 2SB1037EIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETSILICON POWER TRANSISTOR2SD1481NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) On-chip C-to-B Zener diode for surge voltage absorption Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) Ideal for use in a direct drive from IC to the devices such

Data SheetAEC-Q101 QualifiedMedium Power Transistor (50V,0.5A)2SD1949FRA / 2SD1484KFRA2SD1949 / 2SD1484KFeatures Dimensions (Unit : mm)1) High current.(IC=0.5A)UMT32) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.(SC-70)(1) Emitter(2) Bace(3) CollectorAbsolute maximum rationgs (Ta=25 C)SMT3(SC-59)Parameter Symbol Limits Unit

2SD1834TransistorsTransistors2SD1468S / 2SD1865(94S-340-D64)(94L-767-D65)311Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for re

Data SheetMedium Power Transistor (50V,0.5A)MediumPowerTransistor(50V,0.5A)2SD1949 / 2SD1484K2SD19492SD1484KFeatures Dimensions (Unit : mm)1) High current.(IC=0.5A)UMT32) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.(SC-70)(1) Emitter(2) Bace(3) C

2SD1949 / 2SD1484K / 2SC1741STransistorsTransistors2SC3359S(96-678-D15)(SPEC-D16)318

2SD1949 / 2SD1484KDatasheetMiddle Power Transistor (50V, 500mA)lOutlinelParameter Value SOT-323 SOT-346VCEO50VIC500mA 2SD1949 2SD1484K(UMT3) (SMT3) lFeatures lInner circuitl l1)High current. (IC=0.5A)2)Low VCE(sat) VCE(sat)400mV at IC=150mA/IB=15

MCCTMMicro Commercial Components20736 Marilla Street Chatsworth2SD1499-PMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Wide Safe Operation Area Power Transistors Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Com

Transistor2SD1424Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High foward current transfer ratio hFE.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 50 V1.27 1.27Collector to emitter voltag

Transistor2SD1458Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board. 0.850.55 0.1 0.45 0

Transistor2SD1458Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board. 0.850.55 0.1 0.45 0

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Power Transistors2SD1499Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB106310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesExtremely satisfactory linearity of the forward current transfer 3.1 0.1ratio hFEWide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed to the heat

Transistor2SD1478, 2SD1478ASilicon NPN epitaxial planer type darlingtonUnit: mm+0.2For low-frequency amplification2.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15Features1Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE3= 4000 to 20000. 2A shunt resistor is omitted from the driver

Power Transistors2SD1446Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEHigh collector to base voltage VCBOFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25C

Power Transistors2SD1457, 2SD1457ASilicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm15.0 0.3 5.0 0.211.0 0.2 3.2FeaturesHigh foward current transfer ratio hFE 3.2 0.1High collector to base voltage VCBOFull-pack package which can be installed to the heat sink withone screw2.0 0.22.0 0.1Absolute Maximum Ratings (TC=25C)

Power Transistors2SD1474Silicon NPN epitaxial planar typeFor power amplification with high forward current transfer ratioUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh forward current transfer ratio hFE which has satisfactory 3.1 0.1linearityHigh emitter to base voltage VEBOFull-pack package which can be installed to the heat sink withone screw1.3

Transistor2SD1450Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low collector to emitter saturation voltage VCE(sat).markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter vol

Transistor2SD1450Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low collector to emitter saturation voltage VCE(sat).markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter vol

Transistor2SD1423, 2SD1423ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB1030 and 2SB1030A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SD1423 30VCBO V 1 2 3base voltage 2SD1423A 60Collector

Power Transistors2SD1485Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB105415.0 0.3 5.0 0.2Features11.0 0.2 3.2Extremely satisfactory linearity of the forward current transferratio hFE 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed to the heat sink

Transistor2SD1424Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High foward current transfer ratio hFE.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 50 V1.27 1.27Collector to emitter voltag

Transistor2SD1423, 2SD1423ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB1030 and 2SB1030A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SD1423 30VCBO V 1 2 3base voltage 2SD1423A 60Collector

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Transistor2SD1478, 2SD1478ASilicon NPN epitaxial planer type darlingtonUnit: mm+0.2For low-frequency amplification2.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15Features1Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE3= 4000 to 20000. 2A shunt resistor is omitted from the driver

Power Transistors2SD1480Silicon NPN triple diffusion planar typeFor power amplificationUnit: mmComplementary to 2SB105210.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features High forward current transfer ratio hFE which has satisfactorylinearity 3.1 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink withone

2SD1472Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineUPAK21231ID41. Base2. Collector2 k 0.5 k3. Emitter(Typ) (Typ)4. Collector (Flange)32SD1472Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEB

2SD1471Silicon NPN Planar, DarlingtonApplicationHigh gain amplifierOutlineUPAK12 23141. Base2. Collector3. Emitter4. Collector (Flange)32SD1471Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 10 VCollector current IC 300 mACollector pea

2SD1418Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1025OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1418Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 5VCollector

2SD1420Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1420Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5VCollector current IC 1.5 ACollector peak curren

2SD1419Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1026OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1419Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 100 VEmitter to base voltage VEBO 5VCollecto

2SD1436(K)Silicon NPN Triple DiffusedApplicationPower switching complementary pair with 2SB1032(K)OutlineTO-3P211. Base2. Collector(Flange)3. Emitter 1.5 k 130 (Typ) (Typ)13232SD1436(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VE

2SD1421Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1421Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 160 VEmitter to base voltage VEBO 5VCollector current IC 1.5 ACollector peak curren

2SD1470Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineUPAK12 23141. Base2. Collector3. Emitter4. Collector (Flange)32SD1470Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector current IC 1AColle

2SD1489Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1058OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD1489Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 16 VEmitter to base voltage VEBO 6VCollector current IC 2ACollec

2SD1490Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1059OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD1490Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6VCollector current IC 1ACollec

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2SD1468S 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Low Saturation Voltage Ideal for Voltage, High Current Drives. High DC Current Gain and High Current Millimeter REF. Min. Max. A 3.90 4.10 B 3.05 3.25 CLASSIFICATION OF hFE C 1.42 1.62 D 1

2SD1468 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation Voltage Ideal for Low Voltage, High Current Dribes High DC Current Gain and High Current Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - CLASSIFICATION OF hFE D 3.

2SD1437 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB1033ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 40 W Juncti

Silicon Diffused Power Transistor2SD1403GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in horizontal deflection circuites of colour television receiversMT-100QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1500 VCES

NPN TRIPLE DIFFUSED2SD1402 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) SC-65 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collecto

2SD1407 PNP EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SB1016ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W

NPN TRIPLE DIFFUSED2SD1432 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC

NPN TRIPLE DIFFUSED2SD1431 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC

2SD1409 SILICON NPN DARLINGTON TRANSISTORGENERAL DESCRIPTIONDarington transistor are designed for use as general purpose amplifiers, switching and motor control applications.QUICK REFERENCE DATATO-220FSYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 600 VCollector-emitter voltage (open base)VCEO - 400 VCollector current (DC)I

NPN TRIPLE DIFFUSED2SD1433 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) I

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION With TO-220F package High DC current gain Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS Igniter applications High volitage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and sym

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability High speed switching Wide area of safe operation APPLICATIONS For horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1

2SD1468S TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low saturation voltage, typically Vce(sat)=0.006V Ideal for voltage, high current drives, High DC current gain and high current MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V

2SD1499(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTER 1 2 3Features Extremely satisfactory linearity of the forward current transferratio hFE Wide safe operation area High transition frequency fT Full-pack package which can be installed to the heat sink with one screw. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

2SD1468(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low saturation voltage Ideal for low voltage, high current dribes High DC current gain and high current MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 30 VCollector-Base Voltage Dimensions in inches and (millimeters)VCEO 15 VCollector-E

SMD Type TransistorsNPN Transistors2SD1472SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5AC Collector Emitter Voltage VCEO=120V0.42 0.10.46 0.1BID1.Base2 k 0.5 k2.Collector(Typ) (Typ)3.EmitterE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter

SMD Type TransistorsNPN Transistors2SD1471SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3AC Collector Emitter Voltage VCEO=30VB0.42 0.10.46 0.11.BaseE2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base V

SMD Type TransistorsNPN Transistors2SD1478ASOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1C1.BaseB2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsNPN Transistors2SD1418 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SB10250.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continu

SMD Type TransistorsNPN Transistors2SD1420SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=120V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage

SMD Type TransistorsNPN Transistors2SD14191.70 0.1 Features Low frequency power amplifier Complementary to 2SB10260.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 5 Collector Current - Conti

SMD Type TransistorsNPN Transistors2SD1421SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V Low frequency power amplifier0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage

SMD Type TransistorsNPN Transistors2SD1478SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1C1.BaseB2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

SMD Type TransistorsNPN Transistors2SD1470SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=60VC0.42 0.10.46 0.1B1.Base2.CollectorE3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Vol

isc Silicon NPN Power Transistor 2SD1400DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV C

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1429DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SD1459DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1037Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV vertical output, sound outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SD1404DESCRIPTIONHigh Collector Current CapabilityHigh Collector Power Dissipation CapabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSB/W TV horizontal deflection output applications.High voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SD1452DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SD1437DESCRIPTIONCollector-Emitter Breakdown Voltage:V = 60V(Min)(BR)CEOComplement to Type 2SB1033Low Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SD1403DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Col

isc Silicon NPN Power Transistor 2SD1408DESCRIPTIONLow Collector Saturation Voltage: V = 1.5V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOComplement to Type 2SB1017Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1412DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOComplement to Type 2SB1019Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.

isc Silicon NPN Power Transistor 2SD1402DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV C

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1481DESCRIPTIONOn-chip C-to-B Zener diode for surge voltage absorptionLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1ACE(sat) CHigh DC Current Gain: h = 2000(Min) @I = 1AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation

isc Silicon NPN Darlington Power Transistor 2SD1413DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1A, V = 2VFE C CEComplement to Type 2SB1023Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

isc Silicon NPN Power Transistor 2SD1454DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1445DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 10ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 20V (Min)(BR)CEOFast Switching SpeedComplement to Type 2SB948Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power ampl

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1444 2SD1444A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching High collector current Complement to type 2SB953/953A APPLICATIONS Power amplifiers Low voltage switching PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (

isc Silicon NPN Power Transistor 2SD1407DESCRIPTIONLow Collector Saturation Voltage: V = 2.0V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOComplement to Type 2SB1016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1439DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNI

isc Silicon NPN Power Transistor 2SD1440DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

isc Silicon NPN Power Transistor 2SD1499DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1063Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A DESCRIPTION With TO-220Fa package Complement to type 2SB948/948A High speed switching Low collector saturation voltage APPLICATIONS For power amplification,power switching and low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAb

isc Silicon NPN Power Transistor 2SD1479DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD144DESCRIPTIONDC Current Gain -h = 40(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR) CEOWith TO-66 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Darlington Power Transistor 2SD1414DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1A, V = 2VFE C CEComplement to Type 2SB1024Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1430DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Darlington Power Transistor 2SD1409ADESCRIPTIONHigh collector-emitter breakdown voltage-: V = 400V(Min)(BR)CEOHigh DC current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage swi

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1446DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEO Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 500(Min) @ I = 2A, V = 2VFE C CE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance

isc Silicon NPN Darlington Power Transistor 2SD1457DESCRIPTIONHigh DC Current Gain: h = 700(Min.)@ I = 2A, V = 2VFE C CEHigh Collector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SD1494DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

isc Silicon NPN Power Transistor 2SD1488DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max)@I = 7ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1057Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1492DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1432DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Darlington Power Transistor 2SD1415DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB1020Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPL

isc Silicon NPN Darlington Power Transistor 2SD1410DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 2.0V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicati

isc Silicon NPN Power Transistor 2SD1444DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 20V (Min)(BR)CEOComplement to Type 2SB956Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =

isc Silicon NPN Power Transistor 2SD1427DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collec

isc Silicon NPN Power Transistor 2SD1426DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor 2SD1475DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1435 DESCRIPTION With TO-3PN package DARLINGTON High DC current gain Complement to type 2SB1031 APPLICATIONS For low frequency power amplifier and high current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1466DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEO Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 8ACE(sat) CHigh DC Current Gain: h = 200(Min) @ I = 15A, V = 3VFE C CE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance

isc Silicon NPN Power Transistor 2SD1456DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Darlington Power Transistor 2SD1436DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 5A, V = 3VFE C CECollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB1032Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1428DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAX

isc Silicon NPN Power Transistor 2SD1411DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOComplement to Type 2SB1018Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.

isc Silicon NPN Power Transistor 2SD1476DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SD1431DESCRIPTIONHigh Speedt = 1.0 us(MIN) @ I = 4A , I = 0.8Af C B(end)High VoltageV =1300VCBOLow Saturation VoltageV

isc Silicon NPN Darlington Power Transistor 2SD1415ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switch

isc Silicon NPN Power Transistor 2SD1496DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1405DESCRIPTIONHigh DC Current Gain: h = 200(Min) @I = 0.5AFE CLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 1ACE(sat) CCollector Power Dissipation of 25W@ T =25CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power

isc Silicon NPN Power Transistor 2SD1455DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SD1485DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max)@I = 3ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1054Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon NPN Power Transistor 2SD1406DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOComplement to Type 2SB1015Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MA

isc Silicon NPN Darlington Power Transistor 2SD1409DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SD1487DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max)@I = 5ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1056Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon NPN Power Transistor 2SD1441DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

isc Silicon NPN Power Transistor 2SD1480DESCRIPTIONLow Collector Saturation Voltage: V = 2.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB1052Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.

isc Silicon NPN Power Transistor 2SD1486DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max)@I = 4ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1055Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1433DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SD1497DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

isc Silicon NPN Power Transistor 2SD1453DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SD1493DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

isc Silicon NPN Darlington Power Transistor 2SD1416DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB1021Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A DESCRIPTION With TO-3PFa package High DC current gain DARLINGTON High VCBO APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PFa) and symbol 3 EmitterAbsolute maximum ratings

isc Silicon NPN Power Transistor 2SD1495DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

isc Silicon NPN Darlington Power Transistor 2SD1417DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 3A)FE CE CLow Collector Saturation VoltageComplement to Type 2SB1022Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier and switchin

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1451DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1425DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAX