Биполярный транзистор 2SD1478A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1478A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 15000
Корпус транзистора: SOT23
2SD1478A Datasheet (PDF)
2sd1478a.pdf
SMD Type TransistorsNPN Transistors2SD1478ASOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1C1.BaseB2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO
2sd1478 e.pdf
Transistor2SD1478, 2SD1478ASilicon NPN epitaxial planer type darlingtonUnit: mm+0.2For low-frequency amplification2.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15Features1Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE3= 4000 to 20000. 2A shunt resistor is omitted from the driver
2sd1478.pdf
Transistor2SD1478, 2SD1478ASilicon NPN epitaxial planer type darlingtonUnit: mm+0.2For low-frequency amplification2.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15Features1Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE3= 4000 to 20000. 2A shunt resistor is omitted from the driver
2sd1478.pdf
SMD Type TransistorsNPN Transistors2SD1478SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1C1.BaseB2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3
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