Справочник транзисторов. 2SD1532

 

Биполярный транзистор 2SD1532 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1532

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 30 W

Макcимально допустимое напряжение коллектор-база (Ucb): 120 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 3000

Корпус транзистора: TO220

Аналоги (замена) для 2SD1532

 

 

2SD1532 Datasheet (PDF)

4.1. 2sd1536m.pdf Size:48K _rohm

2SD1532

4.2. 2sd1538.pdf Size:57K _panasonic

2SD1532
2SD1532

Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type Unit: mm 8.5 0.2 3.4 0.3 For low-voltage switching 6.0 0.5 1.0 0.1 Complementary to 2SB1070 and 2SB1070A Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circuit boar

 4.3. 2sd1535.pdf Size:65K _panasonic

2SD1532
2SD1532

Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Extremely satisfactory linearity of the forward current transfer ? 3.1 0.1 ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with 1.3

4.4. 2sd1539.pdf Size:54K _panasonic

2SD1532
2SD1532

Power Transistors 2SD1539, 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Unit: mm Complementary to 2SB1071 and 2SB1071A 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching ? 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings (TC=25?C)

 4.5. 2sd1531.pdf Size:266K _inchange_semiconductor

2SD1532
2SD1532

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1531 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V

4.6. 2sd1535.pdf Size:73K _inchange_semiconductor

2SD1532
2SD1532

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1535 DESCRIPTION ·With TO-220Fa package ·Wide area of safe operation ·High breakdown voltage ·DARLINGTON APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL P

4.7. 2sd1530.pdf Size:273K _inchange_semiconductor

2SD1532
2SD1532

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1530 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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