2SD1557 datasheet, аналоги, основные параметры
Наименование производителя: 2SD1557 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO218
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Аналоги (замена) для 2SD1557
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2SD1557 даташит
8.1. Size:36K hitachi
2sd1559.pdf 
2SD1559 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1079 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 3 k 400 (Typ) (Typ) 1 3 2 3 2SD1559 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltag
8.2. Size:69K wingshing
2sd1556.pdf 
NPN TRIPLE DIFFUSED 2SD1556 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Co
8.3. Size:29K wingshing
2sd1555.pdf 
NPN TRIPLE DIFFUSED 2SD1555 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current
8.4. Size:29K wingshing
2sd1554.pdf 
NPN TRIPLE DIFFUSED 2SD1554 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current
8.5. Size:76K jmnic
2sd1556.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1556 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
8.6. Size:77K jmnic
2sd1555.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1555 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
8.7. Size:76K jmnic
2sd1553.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1553 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
8.8. Size:78K jmnic
2sd1554.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1554 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
8.9. Size:181K inchange semiconductor
2sd155.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD155 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR) CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier appli
8.10. Size:205K inchange semiconductor
2sd1550.pdf 
isc Product Specification isc Silicon NPN Power Transistor 2SD1550 DESCRIPTION High Breakdown Voltage- V = 1000V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(
8.11. Size:220K inchange semiconductor
2sd1559.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1559 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 10A, V = 3V FE C CE High Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type 2SB1079 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power
8.12. Size:204K inchange semiconductor
2sd1552.pdf 
isc Product Specification isc Silicon NPN Power Transistor 2SD1552 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(
8.14. Size:116K inchange semiconductor
2sd1556.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1556 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter
8.15. Size:213K inchange semiconductor
2sd1555.pdf 
isc Silicon NPN Power Transistor 2SD1555 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
8.16. Size:214K inchange semiconductor
2sd1553.pdf 
isc Silicon NPN Power Transistor 2SD1553 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
8.17. Size:204K inchange semiconductor
2sd1551.pdf 
isc Product Specification isc Silicon NPN Power Transistor 2SD1551 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(
8.18. Size:214K inchange semiconductor
2sd1554.pdf 
isc Silicon NPN Power Transistor 2SD1554 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
Другие транзисторы: 2SD155, 2SD1550, 2SD1551, 2SD1552, 2SD1553, 2SD1554, 2SD1555, 2SD1556, BD678A, 2SD1558, 2SD1559, 2SD1559A, 2SD156, 2SD1562, 2SD1562A, 2SD1563, 2SD1564
