Справочник транзисторов. 2SD1557

 

Биполярный транзистор 2SD1557 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD1557
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO218

 Аналоги (замена) для 2SD1557

 

 

2SD1557 Datasheet (PDF)

 8.1. Size:36K  hitachi
2sd1559.pdf

2SD1557
2SD1557

2SD1559Silicon NPN Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SB1079OutlineTO-3P211. Base2. Collector(Flange)3. Emitter 3 k 400 (Typ) (Typ)13232SD1559Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 100 VEmitter to base voltag

 8.2. Size:69K  wingshing
2sd1556.pdf

2SD1557

NPN TRIPLE DIFFUSED2SD1556 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Co

 8.3. Size:29K  wingshing
2sd1555.pdf

2SD1557

NPN TRIPLE DIFFUSED2SD1555 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

 8.4. Size:29K  wingshing
2sd1554.pdf

2SD1557

NPN TRIPLE DIFFUSED2SD1554 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

 8.5. Size:76K  jmnic
2sd1556.pdf

2SD1557
2SD1557

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1556 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE

 8.6. Size:77K  jmnic
2sd1555.pdf

2SD1557
2SD1557

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1555 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE

 8.7. Size:76K  jmnic
2sd1553.pdf

2SD1557
2SD1557

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1553 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE

 8.8. Size:78K  jmnic
2sd1554.pdf

2SD1557
2SD1557

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1554 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE

 8.9. Size:181K  inchange semiconductor
2sd155.pdf

2SD1557
2SD1557

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD155DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR) CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier appli

 8.10. Size:205K  inchange semiconductor
2sd1550.pdf

2SD1557
2SD1557

isc Product Specificationisc Silicon NPN Power Transistor 2SD1550DESCRIPTIONHigh Breakdown Voltage-: V = 1000V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(

 8.11. Size:220K  inchange semiconductor
2sd1559.pdf

2SD1557
2SD1557

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1559DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 10A, V = 3VFE C CEHigh Collector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type 2SB1079Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power

 8.12. Size:204K  inchange semiconductor
2sd1552.pdf

2SD1557
2SD1557

isc Product Specificationisc Silicon NPN Power Transistor 2SD1552DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(

 8.13. Size:205K  inchange semiconductor
2sd1558.pdf

2SD1557
2SD1557

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1558DESCRIPTION High DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

 8.14. Size:116K  inchange semiconductor
2sd1556.pdf

2SD1557
2SD1557

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1556 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter

 8.15. Size:213K  inchange semiconductor
2sd1555.pdf

2SD1557
2SD1557

isc Silicon NPN Power Transistor 2SD1555DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 8.16. Size:214K  inchange semiconductor
2sd1553.pdf

2SD1557
2SD1557

isc Silicon NPN Power Transistor 2SD1553DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 8.17. Size:204K  inchange semiconductor
2sd1551.pdf

2SD1557
2SD1557

isc Product Specificationisc Silicon NPN Power Transistor 2SD1551DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(

 8.18. Size:214K  inchange semiconductor
2sd1554.pdf

2SD1557
2SD1557

isc Silicon NPN Power Transistor 2SD1554DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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